Semiconductor module

Abstract

The present invention realizes the miniaturization of a semiconductor module. The semiconductor module includes a module board having external electrode terminals and a heat radiation pad over a lower surface thereof, a first semiconductor chip incorporating an initial-stage transistor of a high frequency power amplifying device therein, a second semiconductor chip incorporating a next-stage transistor and a final-stage transistor therein, and an integrated passive device which constitutes a matching circuit. At least one of the first semiconductor chip and the second semiconductor chip and the integrated passive device are mounted over an upper surface of the module board in an overlapped manner.

1 . A power amplifier module including a power amplifying circuit, comprising: 
 a module board having a wiring on an upper surface thereof and an external electrode terminal on a lower surface thereof;    a semiconductor chip including an active element comprising the power amplifying circuit, disposed over the upper surface of the module board;    an integrated passive device disposed over the upper surface of the module board; and    a sealing portion covering the semiconductor chip and integrated passive device,    wherein the integrated passive device is electrically connected with the power amplifying circuit.    
     
     
         2 . The power amplifier module according to  claim 1 , wherein the integrated passive device is comprised of: 
 a board;    a first insulation layer formed over the board;    a first conductive layer formed over the first insulating layer;    a dielectric layer formed on the first conductive layer;    a second conductive layer formed on the dielectric layer; and    a second insulation layer formed over the second conductive layer,    wherein the first conductive layer, dielectric layer and second conductive layer comprise a capacitor.    
     
     
         3 . The power amplifier module according to  claim 2 , wherein the board is made of a glass plate.  
     
     
         4 . The power amplifier module according to  claim 1 , wherein the integrated passive device comprises an output matching circuit.  
     
     
         5 . The power amplifier module according to  claim 1 , wherein the integrated passive device comprises an inductor.  
     
     
         6 . The power amplifier module according to  claim 1 , wherein the power amplifier module is employed in terminal equipment for mobile communication.  
     
     
         7 . The power amplifier module according to  claim 1 , wherein the active element is comprised of a MOSFET.  
     
     
         8 . The power amplifier module according to  claim 1 , wherein the active element is comprised of a bipolar transistor.  
     
     
         9 . The power amplifier module according to  claim 1 , wherein the power amplifying circuit can amplify a signal of a frequency band of 1710 MHz to 1785 MHz and/or a signal of a frequency band of 880 MHz to 915 MHz.  
     
     
         10 . The power amplifier module according to  claim 1 , wherein the sealing portion is made of insulating resin.  
     
     
         11 . A power amplifier module including a power amplifying circuit, comprising: 
 a module board having a wiring on an upper surface thereof and an external electrode terminal on a lower surface thereof;    at least one semiconductor chip including an active element comprising the power amplifying circuit, disposed over the upper surface of the module board;    an integrated passive device disposed above the upper surface of the module board; and    a sealing portion made of an insulating resin covering the at least one semiconductor chip and integrated passive device,    wherein the integrated passive device is electrically connected with the power amplifying circuit.    
     
     
         12 . The power amplifier module according to  claim 11 , wherein the integrated passive device is comprised of: 
 a board;    a first insulation layer formed over the board;    a first conductive layer formed over the first insulating layer;    a dielectric layer formed on the first conductive layer;    a second conductive layer formed on the dielectric layer; and    a second insulation layer formed over the second conductive layer,    wherein the first conductive layer, dielectric layer and second conductive layer comprise a capacitor.    
     
     
         13 . The power amplifier module according to  claim 12 , wherein the board is made of a glass plate.  
     
     
         14 . The power amplifier module according to  claim 11 , wherein the integrated passive device comprises an output matching circuit.  
     
     
         15 . The power amplifier module according to  claim 11 , wherein the integrated passive device comprises an inductor.  
     
     
         16 . A power amplifier module including a power amplifying circuit, comprising: 
 a module board having a wiring on an upper surface thereof and an external electrode terminal on a lower surface thereof;    a first semiconductor chip including an active element comprising the power amplifying circuit, disposed over the upper surface of the module board;    a second semiconductor chip disposed over the upper surface of the module board;    an integrated passive device disposed above the upper surface of the module board; and    a sealing portion covering the first and second semiconductor chips and integrated passive device,    wherein the integrated passive device is electrically connected with the power amplifying circuit.    
     
     
         17 . The power amplifier module according to  claim 16 , wherein the integrated passive device is comprised of: 
 a board;    a first insulation layer formed over the board;    a first conductive layer formed over the first insulating layer;    a dielectric layer formed on the first conductive layer;    a second conductive layer formed on the dielectric layer; and    a second insulation layer formed over the second conductive layer,    wherein the first conductive layer, dielectric layer and second conductive layer comprise a capacitor.    
     
     
         18 . The power amplifier module according to  claim 17 , wherein the board is made of a glass plate.  
     
     
         19 . The power amplifier module according to  claim 16 , wherein the integrated passive device comprises an output matching circuit.  
     
     
         20 . The power amplifier module according to  claim 16 , wherein the integrated passive device comprises an inductor.