Method to control mask profile for read sensor definition

Abstract

A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask. This avoids the formation of a bulbous or mushroom shaped photoresist mask and therefore, avoids shadowing effects during subsequent manufacturing processes.

1 . A method for manufacturing a magnetoresistive sensor, comprising: 
 providing a substrate;    depositing a plurality of sensor layers;    depositing an antireflective coating (ARC) layer;    forming a photoresist mask on the (ARC) layer;    performing a reactive ion etch (RIE) to remove portions of the ARC layer that are not covered by the photoresist mask, the RIE being performed in a plasma chamber having a platen, the performing the RIE further comprising applying a platen power of at least 70 W.    
     
     
         2 . A method as in  claim 1 , where the platen power is between 70 W and 500 W.  
     
     
         3 . A method as in  claim 1 , wherein the platen power is between 250 W and 350 W.  
     
     
         4 . A method as in  claim 1 , wherein the platen power is about 300 W.  
     
     
         5 . A method for manufacturing a magnetoresistive sensor, comprising: 
 providing a substrate;    depositing a plurality of sensor layers;    depositing a layer of material that is resistant to removal by chemical mechanical polishing (CMP stop layer);    depositing an ion mill resistant mask layer;    forming a photoresist mask on the ion mill resistant layer;    performing a reactive ion etch (RIE) to remove portions of the ion mill resistant mask that are not covered by the photoresist mask, the RIE being performed in a plasma chamber having a platen, the performing the RIE further comprising applying a platen power of at least 70 W.    
     
     
         6 . A method as in  claim 5 , wherein the CMP stop layer comprises diamond like carbon.  
     
     
         7 . A method as in  claim 5 , wherein the ion mill resistant material comprises Duramide.  
     
     
         8 . A method as in  claim 5 , wherein the platen power applied to the platen is between 70 W and 500 W.  
     
     
         9 . A method as in  claim 5  wherein the platen power applied to the platen is between 250 W and 350 W.  
     
     
         10 . A method as in  claim 5  wherein the platen power applied to the platen is about 300 W.  
     
     
         11 . A method as in  claim 5  wherein the RIE is performed in a plasma chamber containing an O 2  atmosphere.  
     
     
         12 . A method as in  claim 5  further comprising, after performing the ion mill, depositing a layer of magnetically hard material.  
     
     
         13 . A method as in  claim 12 , further comprising after depositing the magnetically hard material, depositing an electrically conductive lead material.  
     
     
         14 . A method as in  claim 5  further comprising, after performing the ion mill: 
 despositing a layer of magnetically hard material;    depositing an electrically conductive lead material; and    performing a chemical mechanical polish (CMP).    
     
     
         15 . A method as in  claim 14  further comprising after performing the CMP, depositing a layer of non-magnetic, electrically insulating material.  
     
     
         16 . A method as in  claim 5  wherein the photoresist mask is TIS.  
     
     
         17 . A method as in  claim 5  further comprising, after performing the ion mill: 
 depositing a seed layer;    depositing a layer of hard magnetic material;    depositing a layer of non-magnetic, electrically conductive lead material;    performing a chemical mechanical polish; and    depositing a layer of non-magnetic, electrically insulating gap material.    
     
     
         18 . A method as in  claim 17 , wherein the non-magnetic, electrically conductive lead material comprises Rh.  
     
     
         19 . A method as in  claim 17 , wherein the non-magnetic, electrically conductive lead material comprises Ta.  
     
     
         20 . A method as in  claim 17 , wherein the non-magnetic, electrically conductive lead material comprises Au.