Methods to form electronic devices and methods to form a material over a semiconductive substrate

Abstract

A first electrode and a doped oxide layer laterally proximate thereof are provided over a substrate. A silicon nitride layer is formed over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode by low pressure chemical vapor deposition using feed gases comprising a silicon hydride, H 2 and ammonia. The substrate with silicon nitride layer is exposed to oxidizing conditions comprising at least 700° C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing. A second electrode is formed over the silicon dioxide layer and the first electrode. In one implementation, the chemical vapor depositing comprises feed gases of a silicon hydride and ammonia, with the depositing comprising increasing internal reactor temperature from below 500° C. to a maximum deposition temperature above 600° C. and starting feed of the silicon hydride into the reactor at a temperature less than or equal to 600° C. In one implementation the depositing comprises increasing internal reactor temperature from below 500° C. to a maximum deposition temperature above 600° C. using a temperature ramp rate of at least 10° C./minute from at least 500° C. to at least 600° C. Other aspects and implementations are described.

1 - 53 . (canceled)  
   
   
       54 . A method of forming an electronic device comprising: 
 providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;    low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode using feed gases comprising a silicon hydride and ammonia within a reactor while the substrate is rotating;    reducing rotation rate of the substrate upon substantially ceasing flow of at least one of the silicon hydride and ammonia to the reactor;    exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700° C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing; and    forming a second electrode over the silicon dioxide layer and the first electrode.    
   
   
       55 . The method of  claim 54  wherein the rotation rate is reduced by at least 50% of that immediately prior to substantially ceasing flow of the at least one of the silicon hydride and ammonia to the reactor.  
   
   
       56 . The method of  claim 54  wherein said reducing is to some constant lower rate which is maintained for at least 1 minute.  
   
   
       57 . The method of  claim 54  wherein rotation rate is reduced upon substantially ceasing flow of the silicon hydride to the reactor.  
   
   
       58 . The method of  claim 54  wherein rotation rate is reduced upon substantially ceasing flow of the ammonia to the reactor.  
   
   
       59 . The method of  claim 54  wherein flow of the silicon hydride and ammonia is ceased at substantially the same time.  
   
   
       60 - 68 . (canceled)  
   
   
       69 . A method of forming an electronic device comprising: 
 providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;    low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode using feed gases comprising a silicon hydride and ammonia within a reactor while the substrate is rotating;    reducing rotation rate of the substrate within 2 minutes of substantially ceasing flow of at least one of the silicon hydride and ammonia to the reactor;    exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700° C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide-layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing; and    forming a second electrode over the silicon dioxide layer and the first electrode.    
   
   
       70 . The method of  claim 69  wherein the reducing occurs within  60  seconds of substantially ceasing flow of the at least one of the silicon hydride and ammonia to the reactor.  
   
   
       71 . The method of  claim 69  wherein the reducing occurs commensurate with or after substantially ceasing flow of the at least one of the silicon hydride and the ammonia to the reactor.  
   
   
       72 . The method of  claim 69  wherein the reducing occurs after substantially ceasing flow of the at least one of the silicon hydride and the ammonia to the reactor.  
   
   
       73 . The method of  claim 69  wherein the reducing occurs before substantially ceasing flow of the at least one of the silicon hydride and the ammonia to the reactor.  
   
   
       74 . The method of  claim 69  wherein the rotation rate is reduced by at least 50% of that immediately prior to starting said reducing.  
   
   
       75 . The method of  claim 69  wherein said reducing is to some constant lower rate which is maintained for at least 1 minute.  
   
   
       76 . The method of  claim 69  wherein the reducing occurs commensurate with or after substantially ceasing flow of the at least one of the silicon hydride and the ammonia to the reactor, and the reducing is to some constant lower rate which is maintained for at least 1 minute.  
   
   
       77 - 80 . (canceled)  
   
   
       81 . A method of forming an electronic device comprising: 
 providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;    low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode using feed gases comprising a silicon hydride and ammonia within a reactor;    after the depositing, flowing an inert cooling gas through the reactor to cool the substrate and deposited material;    after the cooling, exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700° C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing; and    forming a second electrode over the silicon dioxide layer and the first electrode.    
   
   
       82 . The method of  claim 81  wherein pressure within the reactor during the cooling is greater than 1 atmosphere.  
   
   
       83 . A method of forming an electronic device comprising: 
 providing a doped oxide layer over a substrate;    chemical-mechanical polishing the doped oxide layer; and    after the chemical-mechanical polishing, flowing the doped oxide layer in a process comprising at least two steps, a prior in time of the steps comprising an inert atmosphere at a temperature of at least about 700° C., a later in time of the steps comprising an ammonia comprising atmosphere at a temperature of at least about 700° C. and forming a silicon nitride layer over the doped oxide layer.    
   
   
       84 . The method of  claim 83  comprising flowing the doped oxide layer prior to the chemical-mechanical polishing at a temperature of at least about 700° C.  
   
   
       85 . The method of  claim 83  wherein the doped oxide comprises phosphorous doped glass.  
   
   
       86 . The method of  claim 83  wherein the doped oxide comprises boron doped glass.  
   
   
       87 . The method of  claim 83  wherein the doped oxide comprises boron and phosphorous doped glass.  
   
   
       88 . A method of forming an electronic device comprising: 
 providing a doped oxide layer over a substrate;    forming an opening into the doped oxide layer;    depositing conductive material to less than completely fill the opening and form over the doped oxide layer proximate the opening;    removing the conductive material formed over the doped oxide layer proximate the opening to isolate the conductive material within the opening;    after the removing, flowing the doped oxide layer in a process comprising at least two steps, a prior in time of the steps comprising an inert atmosphere at a temperature of at least about 700° C., a later in time of the steps comprising an ammonia comprising atmosphere at a temperature of at least about 700° C. and forming a silicon nitride layer at least over the doped oxide layer;    exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700° C. to form a silicon dioxide layer over the silicon nitride layer and the conductive material, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing; and    forming a conductive electrode over the silicon dioxide layer and the conductive material.    
   
   
       89 . The method of  claim 88  comprising flowing the doped oxide layer prior to the chemical-mechanical polishing at a temperature of at least about 700° C.