Distributed Bragg's reflector of digital-alloy multinary compound semiconductor

Abstract

There is provided a distributed Bragg's reflector (DBR) comprising a substrate and an unit distributed Bragg's reflector (DBR) layer, wherein a multi-layer is laminated on the substrate. The unit DBR layer is composed of a multi-layer laminated structure of unit digital-alloy multinary compound semiconductor layer/multinary compound semiconductor layer or unit digital-alloy multinary compound semiconductor layer/unit digital-alloy multinary compound semiconductor layer. The unit digital-alloy multinary compound semiconductor layer is composed of the multi-layer laminated structure of the first layer of multinary compound semiconductor and the second layer of a different multinary compound semiconductor on said first layer. The digital-alloy distributed Bragg's reflector of the present invention has a uniform quality on the substance area and the filter and reflector having uniformly high quality can be mass produced by using the reflector.

1 . A distributed Bragg's reflector (DBR) comprising a substrate and a unit distributed Bragg's reflector (DBR) layer formed by laminating a plurality of layers, on the substrate, and wherein said unit DBR layer comprises one or more of a multi-layer laminated structure of unit digital-alloy multinary compound semiconductor layer/multinary compound semiconductor layer and a first unit digital-alloy multinary compound semiconductor layer/a second unit digital-alloy multinary compound semiconductor layer, and wherein said unit digital-alloy multinary compound semiconductor layer is composed of the multi-layer laminated structure of a first layer of multinary compound semiconductor and a second layer of a different multinary compound semiconductor on said first layer.  
   
   
       2 . The distributed Bragg's reflector according to  claim 1 , wherein a thickness of each layer constituting the unit digital-alloy multinary compound semiconductor layer is smaller than a wavelength of light inside the digital-alloy multinary compound semiconductor layer.  
   
   
       3 . The distributed Bragg's reflector according to  claim 1 , wherein the multinary compound semiconductor layer constituting said unit DBR layer is a separate digital-alloy multinary compound semiconductor layer having a different composition from a digital-alloy multinary compound semiconductor layer that underlies the separate digital-alloy multinary compound semiconductor layer.  
   
   
       4 . The distributed Bragg's reflector according to  claim 1 , wherein the unit DBR layer comprises the multi-layer laminated structure of AlGaAs digital-alloy multinary compound semiconductor layer/GaAs layer.  
   
   
       5 . The distributed Bragg's reflector according to  claim 4 , wherein the AlGaAs digital-alloy multinary compound semiconductor layer comprises a AlAs layer and the GaAs layer on a AlAs layer.  
   
   
       6 . The distributed Bragg's reflector according to  claim 1 , wherein the unit digital-alloy multinary compound semiconductor layer is selected from a group consisting of InGa(Al)As/In(Ga)AlAs, InGaAsP/InGaAsP, InGaP/InAlP, ( 1   n )GaAlAsSb/(In)GaAlAsSb, InGaAlAs(N)/InGaAlAs(N) and SiO x /TiO x .  
   
   
       7 . A vertical resonator surface light-emitting laser diode comprising the distributed Bragg's reflector according to  claim 1 .  
   
   
       8 . A vertical resonance light-emitting diode comprising the distributed Bragg's reflector according to  claim 1 .  
   
   
       9 . A photodetector comprising the distributed Bragg's reflector according to  claim 1 .  
   
   
       10 . A resonator comprising a substrate and at least one distributed Bragg's reflector (DBR) layer formed by laminating one or more layers on the substrate, and wherein said DBR layer comprises at least one layer of a digital-alloy multinary compound semiconductor layer, wherein the digital-alloy multinary compound semiconductor layer is formed by deposition of a plurality of layers that together form the multinary compound semiconductor layer.  
   
   
       11 . The resonator according to  claim 10 , wherein a thickness of each layer constituting the digital-alloy multinary compound semiconductor layer is smaller than a wavelength of light inside the digital-alloy multinary compound semiconductor layer.  
   
   
       12 . The resonator according to  claim 10 , wherein the multinary compound semiconductor layer constituting said DBR layer is a separate digital-alloy multinary compound semiconductor layer having a different composition from an underlying digital-alloy multinary compound semiconductor layer.  
   
   
       13 . The resonator according to  claim 10 , wherein the DBR layer comprises the multi-layer laminated structure of AlGaAs digital-alloy multinary compound semiconductor layer/GaAs layer.  
   
   
       14 . The resonator according to  claim 13 , wherein the AlGaAs digital-alloy multinary compound semiconductor layer comprises a AlAs layer and a GaAs layer on the AlAs layer.  
   
   
       15 . The resonator according to  claim 10 , wherein the digital-alloy multinary compound semiconductor layer is selected from a group consisting of InGa(Al)As/In(Ga)AlAs, InGaAsP/InGaAsP, InGaP/InAlP, (In)GaAlAsSb/(In)GaAlAsSb, InGaAlAs(N)/InGaAlAs(N) and SiO x /TiO x .  
   
   
       16 . A method of making a resonator, the method comprising: 
 forming a distributed Bragg's reflector (DBR) layer by laminating on a substrate a plurality layers comprising at least one digital-alloy multinary compound semiconductor layer, wherein laminating the at least one digital-alloy multinary compound semiconductor layer includes the steps of depositing a plurality of layers that together form the multinary compound semiconductor layer.    
   
   
       17 . The method of  claim 16  further comprising the step of forming in the DBR layer at least one multi-layer laminated structure of AlGaAs digital-alloy multinary compound semiconductor layer/GaAs layer by laminating a AlAs layer on a AlAs layer.  
   
   
       18 . The method of  claim 16 , wherein a thickness of each layer constituting the digital-alloy multinary compound semiconductor layer is smaller than a wavelength of light inside the digital-alloy multinary compound semiconductor layer.