Boron-doped diamond semiconductor

Abstract

First and second synthetic diamond regions are doped with boron. The second synthetic diamond region is doped with boron to a greater degree than the first synthetic diamond region, and in physical contact with the first synthetic diamond region. In a further example embodiment, the first and second synthetic diamond regions form a diamond semiconductor, such as a Schottky diode when attached to at least one metallic lead.

1 . A semiconductor device, comprising: 
 a first synthetic diamond region doped with boron;    a second synthetic diamond region doped with boron, the second synthetic diamond region doped with boron to a greater degree than the first synthetic diamond region and in physical contact with the first synthetic diamond region.    
   
   
       2 . The semiconductor device of  claim 1 , further comprising a first metal contact attached to the first synthetic diamond region and a second metal contact attached to the second synthetic diamond region.  
   
   
       3 . The semiconductor device of  claim 1 , wherein the semiconductor device comprises a Schottky diode.  
   
   
       4 . The semiconductor device of  claim 1 , wherein at least one of the first and second synthetic diamond regions is a synthetic monocrystalline diamond.  
   
   
       5 . The semiconductor device of  claim 1 , wherein at least one of the first and second synthetic diamond regions comprises less than 1 ppm impurities not including a dopant.  
   
   
       6 . The semiconductor device of  claim 1 , wherein at least one of the first and second synthetic diamond regions has a thermal conductivity greater than 2500 W/mK.  
   
   
       7 . The semiconductor device of  claim 1 , wherein at least one of the first and second synthetic diamond regions has a thermal conductivity greater than 2700 W/mK.  
   
   
       8 . The semiconductor device of  claim 1 , wherein at least one of the first and second synthetic diamond regions has a thermal conductivity greater than 3200 W/mK.  
   
   
       9 . The semiconductor device of  claim 1 , wherein at least one of the first and the second synthetic diamond regions is isotopically enhanced with carbon-12 such that the resulting carbon-13 concentration is less than 1%.  
   
   
       10 . The semiconductor device of  claim 1 , wherein at least one of the first and second synthetic diamond regions is isotopically enhanced with carbon-12 such that the resulting carbon-13 concentration is less than 0.1%.  
   
   
       11 . The semiconductor device of  claim 1 , wherein at least one of the first and second synthetic diamond regions is isotopically enhanced with carbon-12 such that the resulting carbon-13 concentration is less than 0.01%.  
   
   
       12 . The semiconductor device of  claim 1 , wherein at least one of the first and second synthetic diamond regions has a nitrogen concentration of less than 50 ppm.  
   
   
       13 . The semiconductor device of  claim 1 , wherein at least one of the first and second synthetic diamond regions has a nitrogen concentration of less than 10 ppm.  
   
   
       14 . The semiconductor device of  claim 1 , wherein at least one of the first and second synthetic diamond regions has a nitrogen concentration of less than 5 ppm.  
   
   
       15 . The semiconductor device of  claim 1 , wherein the first and second diamond regions are formed by: 
 implanting hydrogen in a base diamond region doped with boron to a first degree;    forming a grown diamond region on the base diamond region by chemical vapor deposition, the grown diamond region being doped with boron to a second degree; and    separating the grown diamond region and a portion of the base diamond region by heating the base diamond region to cause separation at the hydrogen implant layer.    
   
   
       16 . The semiconductor device of  claim 15 , wherein the base diamond region is the first synthetic diamond region and the grown diamond region is the second synthetic diamond region.  
   
   
       17 . The semiconductor device of  claim 15 , wherein the base diamond region is the second synthetic diamond region and the grown diamond region is the first synthetic diamond region.  
   
   
       18 . A method of fabricating a boron-doped diamond semiconductor device, comprising: 
 growing a first synthetic diamond region doped with boron;    implanting hydrogen into the first synthetic diamond region;    growing a second synthetic diamond region doped with boron in a density different that the boron doping density of the first synthetic diamond region, the second synthetic diamond region grown on the first synthetic diamond region; and    heating at least the first synthetic diamond region to separate the first synthetic diamond region at the depth of hydrogen implant.    
   
   
       19 . The method of  claim 18 , wherein the more heavily boron-doped synthetic diamond region comprises an anode of a Schottky diode, and the less heavily boron-doped synthetic diamond region comprises a cathode of a Schottky diode.  
   
   
       20 . The method of  claim 18 , further comprising forming a first metal contact attached to the first synthetic diamond region and a second metal contact attached to the second synthetic diamond region.  
   
   
       21 . The method of  claim 18 , wherein at least one of the first and second synthetic diamond regions are fabricated as a monocrystalline synthetic diamond via chemical vapor deposition.  
   
   
       22 . The method of  claim 18 , wherein at least one of the first and second synthetic diamond regions comprises less than 1 ppm impurities, impurities not including a dopant.  
   
   
       23 . The method of  claim 18 , wherein at least one of the first and second synthetic diamond regions comprises less than 1 ppm nitrogen.  
   
   
       23 . The method of  claim 18 , wherein at least one of the first and second synthetic diamond regions has a thermal conductivity greater than 2500 W/mK.  
   
   
       24 . The method of  claim 18 , wherein at least one of the first and second synthetic diamond regions has a thermal conductivity greater than 2700 W/mK.  
   
   
       25 . The method of  claim 18 , wherein at least one of the first and second synthetic diamond regions has a thermal conductivity greater than 3200 W/mK.  
   
   
       26 . The method of  claim 18  wherein at least one of the first and the second synthetic diamond regions is isotopically enhanced with carbon-12 such that the resulting carbon-13 concentration is less than 1%.  
   
   
       27 . The method of  claim 18 , wherein at least one of the first and second synthetic diamond regions is isotopically enhanced with carbon-12 such that the resulting carbon-13 concentration is less than 0.1%.  
   
   
       28 . The method of  claim 18 , wherein at least one of the first and second synthetic diamond regions is isotopically enhanced with carbon-12 such that the resulting carbon-13 concentration is less than 0.01%.  
   
   
       29 . The method of  claim 18 , wherein at least one of the first and second synthetic diamond regions has a nitrogen concentration of less than 50 ppm.  
   
   
       30 . The method of  claim 18 , wherein at least one of the first and second synthetic diamond regions has a nitrogen concentration of less than 10 ppm.  
   
   
       31 . The method of  claim 18 , wherein at least one of the first and second synthetic diamond regions has a nitrogen concentration of less than 5 ppm.  
   
   
       32 . An integrated circuit, comprising: 
 a first diamond region doped with boron;    a second diamond region doped with boron, the second synthetic diamond region doped with boron to a greater degree than the first synthetic diamond region and in physical contact with the first synthetic diamond region    
   
   
       33 . The integrated circuit of  claim 32 , further comprising a diamond substrate.  
   
   
       34 . The integrated circuit of  claim 33 , wherein the diamond substrate is a monocrystalline synthetic diamond substrate.  
   
   
       35 . The integrated circuit of  claim 31 , wherein at least one of the first and second diamond regions is a synthetic monocrystalline diamond.  
   
   
       36 . The integrated circuit of  claim 31 , wherein at least one of the first and the second diamond regions is isotopically enhanced with carbon-12 such that the resulting carbon-13 concentration is less than 1%.  
   
   
       37 . The integrated circuit of  claim 31 , wherein at least one of the first and second diamond regions is isotopically enhanced with carbon-12 such that the resulting carbon-13 concentration is less than 0.1%.  
   
   
       38 . The integrated circuit of  claim 31 , wherein at least one of the first and second diamond regions is isotopically enhanced with carbon-12 such that the resulting carbon-13 concentration is less than 0.01%.  
   
   
       39 . The integrated circuit of  claim 31 , wherein at least one of the first and second diamond regions has a nitrogen concentration of less than 50 ppm.  
   
   
       40 . The integrated circuit of  claim 31 , wherein at least one of the first and second diamond regions has a nitrogen concentration of less than 10 ppm.  
   
   
       41 . The integrated circuit of  claim 31 , wherein at least one of the first and second diamond regions has a nitrogen concentration of less than 5 ppm.  
   
   
       42 . An electronic device, comprising: 
 a synthetic diamond semiconductor element comprising a first region doped with boron, and further comprising a second region doped with boron, the second synthetic diamond region doped with boron to a greater degree than the first synthetic diamond region and in physical contact with the first synthetic diamond element region.    
   
   
       43 . The electronic device of  claim 42 , wherein the synthetic diamond semiconductor element comprises a Schottky diode.  
   
   
       44 . The electronic device of  claim 42 , wherein the synthetic diamond semiconductor element comprises an integrated circuit.  
   
   
       45 . The electronic semiconductor device of  claim 44 , wherein the integrated circuit further comprises a synthetic monocrystalline diamond substrate.