Substrate processing method and substrate processing apparatus

Abstract

A resist film and a polymer layer adhered on a semiconductor substrate can be removed by the method according to the present invention. A first processing liquid, typically including a oxidizing agent, such as hydrogen peroxide solution, is fed to the substrate, thereby the condition of the resist film and the polymer layer is changed. Next, a second processing liquid, typically including a dimethyl sulfoxide and an amine solvent, is fed to the substrate, thereby the resist film and the polymer layer is dissolved and lifted off from the substrate. A sputtered copper particles included in the polymer layer can also be removed.

1 - 22 . (canceled)  
   
   
       23 . A substrate processing apparatus comprising: 
 an enclosure defining a processing space in which a substrate is processed;    a substrate holder adapted to hold the substrate in the processing space;    a first chemical liquid supply source that holds a first chemical liquid for altering a condition of a resist film to produce an altered resist film;    a second chemical liquid supply source that holds a second chemical liquid for dissolving the altered resist film;    a first chemical liquid line connecting the first chemical liquid supply source to the processing space through a first valve;    a second chemical liquid line connecting the second chemical liquid supply source to the processing space through a second valve; and    a controller that controls the first valve and the second valve such that the first chemical liquid is supplied to the processing space through the first valve, and thereafter the second chemical liquid is supplied to the processing space through the second valve.    
   
   
       24 . The apparatus according to  claim 23 , wherein the first processing liquid further has an ability of oxidizing a sputtered metal, and the second processing liquid further has an ability of dissolving the sputtered metal oxidized by the first processing liquid.  
   
   
       25 . The apparatus according to  claim 23 , further comprising an inert gas feeder that supplies an inert gas to establish a non-oxidizing atmosphere in the processing space.  
   
   
       26 . The apparatus according to  claim 23 , wherein the substrate holder comprises a rotor adapted to rotate the substrate while holding the same.  
   
   
       27 . The apparatus according to  claim 26 , further comprising a controller for controlling a rotational speed of the rotor.  
   
   
       28 . The apparatus according to  claim 23 , wherein: 
 the enclosure includes an outer enclosing element defining a first processing space therein and an inner enclosing element defining a second processing space therein, the inner enclosing element being adapted to move into and out of a space inside the outer enclosing element,    said apparatus further comprising a first nozzle that sprays the first chemical liquid into one of the first and second processing spaces, and a second nozzle that sprays the second chemical liquid into the other of the first and second processing spaces.    
   
   
       29 . The apparatus according to  claim 23 , wherein the first chemical liquid supply source comprises a tank that stores the first chemical liquid, 
 said apparatus further comprising:    a first chemical liquid recovering line through which the first chemical liquid supplied to the processing space is returned to the tank; and    a concentration sensor, provided in the tank or the first chemical liquid recovering line, that determines a concentration of an active component of the first chemical liquid.    
   
   
       30 . The apparatus according to  claim 23 , wherein the second chemical liquid supply source comprises a tank that stores the second chemical liquid, 
 said apparatus further comprising:    a second chemical liquid recovering line through which the second chemical liquid supplied to the processing space is returned to the tank; and    a concentration sensor, provided in the tank or the second chemical liquid recovering line, that determines a concentration of an active component of the second chemical liquid.    
   
   
       31 . The apparatus according to  claim 23 , wherein the first chemical liquid supply source comprises a tank that stores the first chemical liquid, 
 said apparatus further comprising:    a first chemical liquid recovering line through which the first chemical liquid supplied to the processing space is returned to the tank; and    a new liquid feed line through which a new first chemical liquid is supplied to the tank,    the controller adjusting an amount of the first chemical liquid to be returned to the tank and an amount of the new first chemical liquid to be supplied to the tank so that an ability of the first processing liquid, existing in the tank, to alter the resist film is maintained.    
   
   
       32 . The apparatus according to  claim 23 , wherein the second chemical liquid supply source comprises a tank that stores the second chemical liquid, 
 said apparatus further comprising:    a second chemical liquid recovering line through which the second chemical liquid supplied to the processing space is returned to the tank; and    a new liquid feed line through which a new second chemical liquid is supplied to the tank,    the controller adjusting an amount of the second chemical liquid to be returned to the tank and an amount of the new second chemical liquid to be supplied to the tank so that an ability of the second processing liquid, existing in the tank, to alter the resist film is maintained.