High-pressure polishing apparatus and method

Abstract

A high-pressure polishing apparatus and method comprising a condenser having high-pressure nozzles for ejecting a solution on the polishing pad to perform a conditioning, thereby preventing damage to the wafer and destruction of the diamond condenser due to a larger force applied on the diamond condenser in order to obtain a better status of polishing pad. The present invention can be applied to a conventional machine.

1 . A high-pressure polishing apparatus, comprising: 
 a polishing table having a polishing pad thereon;    a polishing slurry inlet positioned on the polishing table for supplying a slurry to the polishing pad;    a rotating wafer carrier positioned on the polishing table for mounting and rotating a wafer, thereby contacting a surface of the wafer with the slurry and the polishing pad to perform a Chemical Mechanical Polishing; and    a condenser positioned on the polishing table having a plurality of high-pressure nozzles for ejecting a solution on the polishing pad after finishing the wafer polishing, thereby performing a conditioning on the surface of the wafer.    
   
   
       2 . The high-pressure polishing apparatus of  claim 1 , wherein the solution is DI water.  
   
   
       3 . The high-pressure polishing apparatus of  claim 1 , wherein the angle between the high-pressure nozzles and the polishing pad is between 5 and 90 degrees.  
   
   
       4 . The high-pressure polishing apparatus of  claim 1 , wherein the arrangement of the high-pressure nozzles is presented by a symmetrical arrangement.  
   
   
       5 . The high-pressure polishing apparatus of  claim 1 , wherein the condenser is able to move up and down, and right and left.  
   
   
       6 . The high-pressure polishing apparatus of  claim 1 , wherein the condenser is able to rotate.  
   
   
       7 . The high-pressure polishing apparatus of  claim 1 , wherein the condenser is used with a diamond condenser.  
   
   
       8 . The high-pressure polishing apparatus of  claim 1 , wherein the condenser is disposed on the polishing slurry inlet.  
   
   
       9 . The high-pressure polishing apparatus of  claim 7 , wherein the condenser is disposed on the diamond condenser.  
   
   
       10 . A method of performing a high-pressure polishing apparatus, comprising; 
 fixing a polishing pad on a polishing table;    placing a wafer on the polishing pad, thereby contacting the wafer surface with the polishing pad;    adding a slurry on the polishing pad by a polishing slurry inlet, performing a Chemical Mechanical Polishing until the required polishing level is reached; and    placing a condenser on the polishing pad, wherein a plurality of high-pressure nozzles are formed on the condenser corresponding to the polishing pad, wherein the high-pressure nozzles eject a solution on the polishing pad to perform a conditioning of the wafer surface.    
   
   
       11 . The method of performing a high-pressure polishing apparatus of  claim 10 , wherein the angle between the high-pressure nozzles and the polishing pad is between 5 and 90 degrees.  
   
   
       12 . The method of performing a high-pressure polishing apparatus of  claim 10 , wherein the solution is DI water.  
   
   
       13 . The method of performing a high-pressure polishing apparatus of  claim 10 , wherein the arrangement of the high-pressure nozzles is presented by a symmetrical arrangement.  
   
   
       14 . The method of performing a high-pressure polishing apparatus of  claim 10 , wherein the condenser is able to move up and down, and right and left.  
   
   
       15 . The method of performing a high-pressure polishing apparatus of  claim 10 , wherein the condenser is able to rotate.  
   
   
       16 . The method of performing a high-pressure polishing apparatus of  claim 10 , wherein the condenser is used with a diamond condenser to condition the wafer surface.  
   
   
       17 . The method of performing a high-pressure polishing apparatus of  claim 10 , wherein the condenser is disposed on the polishing slurry inlet.  
   
   
       18 . The method of performing a high-pressure polishing apparatus of  claim 10 , wherein the condenser is disposed on the diamond condenser.