High-throughput HDP-CVD processes for advanced gapfill applications

Abstract

Methods are provided of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. The fluent gas has an average molecular weight less than 5 amu. A first high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a first deposition/sputter ratio. A second high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a second portion of the silicon oxide film over the substrate and within the gap with a second deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a second deposition/sputter ratio. The second deposition/sputter ratio is less than the first deposition/sputter ratio. Each of the first and second deposition/sputter ratios is defined as a ratio of a sum of a net deposition rate and a blanket sputtering rate to the blanket sputtering rate.

1 . A method of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber, the substrate having a gap formed between adjacent raised surfaces, the method comprising: 
 flowing a silicon-containing gas into the substrate processing chamber;    flowing an oxygen-containing gas into the substrate processing chamber;    flowing a fluent gas having an average molecular weight less than 5 amu into the substrate processing chamber;    forming a first high-density plasma from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a first deposition/sputter ratio; and    forming a second high-density plasma from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a second portion of the silicon oxide film over the substrate and within the gap with a second deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a second deposition/sputter ratio, wherein the second deposition/sputter ratio is less than the first deposition/sputter ratio,    wherein each of the first and second deposition/sputter ratios is defined as a ratio of a sum of a net deposition rate and a blanket sputtering rate to the blanket sputtering rate.    
   
   
       2 . The method recited in  claim 1  wherein the first deposition/sputter ratio is between 20 and 100.  
   
   
       3 . The method recited in  claim 2  wherein the second deposition/sputter ratio is less than 10.  
   
   
       4 . The method recited in  claim 1  wherein forming the second high-density plasma comprising changing process conditions without extinguishing the first high-density plasma.  
   
   
       5 . The method recited in  claim 1  wherein the fluent gas comprises molecular hydrogen H 2 .  
   
   
       6 . The method recited in  claim 5  wherein the molecular hydrogen H 2  is flowed into the substrate processing chamber with a flow rate greater than 500 sccm.  
   
   
       7 . The method recited in  claim 1  wherein the fluent gas comprises helium He.  
   
   
       8 . The method recited in  claim 1  wherein the silicon-containing gas comprises monosilane SiH 4  and the oxygen-containing gas comprises molecular oxygen O 2 .  
   
   
       9 . The method recited in  claim 1  wherein the first portion of the silicon oxide film reduces a depth of the gap by less than 50%.  
   
   
       10 . The method recited in  claim 1  wherein the gap comprises a plurality of gaps formed between adjacent raised surfaces, a first of the gaps having a width at least five times a width of a second of the gaps.  
   
   
       11 . A method of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber, the substrate having a plurality of gaps formed between adjacent raised surfaces, a first of the gaps having a width at least five times a width of a second of the gaps, the method comprising: 
 flowing monosilane SiH 4  into the substrate processing chamber;    flowing molecular oxygen O 2  into the substrate processing chamber;    flowing molecular hydrogen H 2  into the substrate processing chamber at a flow rate greater than 500 sccm;    forming a first high-density plasma from the monosilane SiH 4 , the molecular oxygen O 2 , and the molecular hydrogen H 2  to deposit a first portion of the silicon oxide film over the substrate and within each of the first and second gaps with a first deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a first deposition/sputter ratio between 20 and 100; and    forming a second high-density plasma from the monosilane SiH 4 , the molecular oxygen O 2 , and the molecular hydrogen H 2  to deposit a second portion of the silicon oxide film over the substrate and within each of the first and second gaps with a second deposition process that has simultaneous deposition and sputtering having relative contributions defined by a second deposition/sputter ratio less than 10,    wherein each of the first and second deposition/sputter ratios is defined as a ratio of a sum of a net deposition rate and a blanket sputtering rate to the blanket sputtering rate.    
   
   
       12 . A method of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber, the substrate having a gap formed between adjacent raised surfaces, the method comprising: 
 providing a flow of a first gaseous mixture to the substrate processing chamber, the flow of the first gaseous mixture comprising a flow of a silicon-containing gas, a flow of an oxygen-containing gas, and a flow of a fluent gas;    forming a first high-density plasma from the first gaseous mixture to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components;    exposing the first portion of the silicon oxide film to a second high-density plasma formed with a flow of gases having an average molecular weight less than 5 amu and including a flow of molecular hydrogen H 2 ;    thereafter, providing a flow of a second gaseous mixture to the substrate processing chamber, the flow of the second gaseous mixture comprising a flow of a silicon-containing gas, a flow of an oxygen-containing gas, and a flow of a fluent gas; and    forming a third high-density plasma from the second gaseous mixture to deposit a second portion of the silicon oxide film over the substrate and within the gap with a second deposition process that has simultaneous deposition and sputtering components.    
   
   
       13 . The method recited in  claim 12  wherein the second high-density plasma is formed with a flow that consists essentially of molecular hydrogen H 2 .  
   
   
       14 . The method recited in  claim 12  wherein exposing the first portion to the second high-density plasma comprises terminating the flow of the silicon-containing gas and the flow of the oxygen-containing gas comprised by the flow of the first gaseous mixture.  
   
   
       15 . The method recited in  claim 14  wherein providing the flow of the second gaseous mixture comprises reinitiating the terminated flow of the silicon-containing gas and the terminated flow of the oxygen-containing gas.  
   
   
       16 . The method recited in  claim 12  wherein the flow of molecular hydrogen H 2  is provided at a rate greater than 500 sccm.  
   
   
       17 . The method recited in  claim 12  wherein the flow of molecular hydrogen H 2  is provided at a rate greater than 1000 sccm.  
   
   
       18 . The method recited in  claim 12  further comprising: 
 exposing the second portion of the silicon oxide film to a fourth high-density plasma formed with a flow of gases having an average molecular weight less than 5 amu and including a flow of molecular hydrogen H 2 ;    thereafter, providing a flow of a third gaseous mixture to the substrate processing chamber, the flow of the third gaseous mixture comprising a flow of a silicon-containing gas, a flow of an oxygen-containing gas, and a flow of a fluent gas; and    forming a fifth high-density plasma from the third gaseous mixture to deposit a third portion of the silicon oxide film over the substrate and within the gap with a third deposition process that has simultaneous deposition and sputtering components.    
   
   
       19 . The method recited in  claim 12  wherein: 
 the first deposition process comprises relative deposition and sputtering contributions defined by a first deposition/sputter ratio between 20 and 100;    the second deposition process comprises relative deposition and sputtering contributions defined by a second deposition/sputter ratio less than 10; and    each of the first and second deposition/sputter ratios is defined as a ratio of a sum of a net deposition rate and a blanket sputtering rate to the blanket sputtering rate.    
   
   
       20 . The method recited in  claim 12  wherein the first deposition process comprises: 
 a first part having relative deposition and sputtering contributions defined by a first deposition/sputter ratio between 20 and 100; and    a second part having relative deposition and sputtering contributions defined by a second deposition/sputter ratio less than 10,    wherein the second part temporally follows the first part and each of the first and second deposition/sputter ratios is defined as a ratio of a sum of a net deposition rate and a blanket sputtering rate to the blanket sputtering rate.    
   
   
       21 . The method recited in  claim 12  wherein the second deposition process comprises: 
 a first part having relative deposition and sputtering contributions defined by a first deposition/sputter ratio between 20 and 100; and    a second part having relative deposition and sputtering contributions defined by a second deposition/sputter ratio less than 10,    wherein the second part temporally follows the first part and each of the first and second deposition/sputter ratios is defined as a ratio of a sum of a net deposition rate and a blanket sputtering rate to the blanket sputtering rate.    
   
   
       22 . A method of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber, the substrate having a gap formed between adjacent raised surfaces, the method comprising: 
 providing a flow of a first gaseous mixture to the substrate processing chamber, the flow of the first gaseous mixture comprising a flow of monosilane SiH 4 , a flow of molecular oxygen O 2 , and a flow of molecular hydrogen H 2  at a flow rate greater than 500 sccm;    forming a first high-density plasma from the first gaseous mixture to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components;    terminating the flow of the monosilane SiH 4  and the flow of the molecular oxygen O 2  to expose the first portion of the silicon oxide film to a second high-density plasma formed from the flow of the molecular hydrogen H 2 , wherein the flow rate of the molecular hydrogen H 2  is maintained greater than 500 sccm;    reinitiating the terminated flow of the monosilane SiH 4  and the terminated flow of the molecular oxygen O 2  to form a third high-density plasma to deposit a second portion of the silicon oxide film over the substrate and within the gap with a second deposition process that has simultaneous deposition and sputtering components.    
   
   
       23 . The method recited in  claim 22  wherein: 
 the gap comprises a plurality of gaps formed between adjacent raised surfaces, a first of the gaps having a width at least five times a width of a second of the gaps;    the first deposition process comprises relative deposition and sputtering contributions defined by a first deposition/sputter ratio between 20 and 100; and    the second deposition process comprises relative deposition and sputtering contributions defined by a second deposition/sputter ratio less than 10,    each of the first and second deposition/sputter ratios being defined as a ratio of a sum of a net deposition rate and a blanket sputtering rate to the blanket sputtering rate.    
   
   
       24 . A method of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber, the substrate having a gap formed between adjacent raised surfaces, the method comprising: 
 providing a flow of a first gaseous mixture to the substrate processing chamber, the flow of the first gaseous mixture comprising a flow of a silicon-containing gas, a flow of an oxygen-containing gas, and a flow of a fluent gas;    forming a first high-density plasma from the first gaseous mixture to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components;    exposing the first portion of the silicon oxide film to a second high-density plasma formed with a flow of gases that includes a flow of molecular hydrogen H 2  and does not include a halogen;    thereafter, providing a flow of a second gaseous mixture to the substrate processing chamber, the flow of the second gaseous mixture comprising a flow of a silicon-containing gas, a flow of an oxygen-containing gas, and a flow of a fluent gas; and    forming a third high-density plasma from the second gaseous mixture to deposit a second portion of the silicon oxide film over the substrate and within the gap with a second deposition process that has simultaneous deposition and sputtering components.