US2006153973A1PendingUtilityA1

Ruthenium layer formation for copper film deposition

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Assignee: APPLIED MATERIALS INCPriority: Jun 4, 2002Filed: Jan 20, 2006Published: Jul 13, 2006
Est. expiryJun 4, 2022(expired)· nominal 20-yr term from priority
Inventors:Mei ChangSeshadri GanguliNirmalya Maity
H10P 14/432H10W 20/043H10W 20/042H10W 20/033H10W 20/044B82Y 30/00C23C 16/18C23C 16/45553
48
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Claims

Abstract

In one embodiment, a method for forming a material on a substrate is provided which includes positioning a substrate containing a dielectric material having vias formed therein within a process chamber, forming a barrier layer within the vias and on the dielectric material during a barrier deposition process, forming a ruthenium layer on the barrier layer during a ruthenium deposition process, and filling the vias with a copper material during a copper deposition process. The copper material may be formed by depositing a copper bulk layer over a copper seed layer. The method further provides that the ruthenium layer may be formed by an atomic layer deposition process (ALD) or a physical vapor deposition (PVD) process and the copper material may be formed by an electroless chemical plating process, an electroplating process, a chemical vapor deposition process, an ALD process and/or a PVD process.

Claims

exact text as granted — not AI-modified
1 . A method for forming a material on a substrate, comprising: 
 positioning a substrate containing a dielectric material within a process chamber, wherein vias are contained within the dielectric material and each via has a bottom surface and sidewalls;    forming a barrier layer within the vias and on the dielectric material during a barrier layer deposition process;    forming a ruthenium layer on the barrier layer during a ruthenium deposition process;    exposing a contact layer within the vias by removing material from the bottom surface during a punch-through step; and    filling the vias with a copper material during a copper deposition process.    
     
     
         2 . The method of  claim 1 , wherein the barrier layer contains at least one material selected from the group consisting of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, tungsten nitride, a derivative thereof, and a combination thereof.  
     
     
         3 . The method of  claim 2 , wherein the barrier layer contains a tantalum layer and a tantalum nitride layer.  
     
     
         4 . The method of  claim 1 , wherein the copper material contains a copper seed layer and a copper bulk layer.  
     
     
         5 . The method of  claim 4 , wherein the copper seed layer is deposited by an electroless chemical plating process and the copper bulk layer is deposited by an electrochemical plating process.  
     
     
         6 . The method of  claim 4 , wherein the copper seed layer and the copper bulk layer are deposited by electroless chemical plating processes.  
     
     
         7 . The method of  claim 4 , wherein the copper seed layer is deposited by a chemical vapor deposition process and the copper bulk layer is deposited by an electrochemical plating process.  
     
     
         8 . The method of  claim 4 , wherein the copper seed layer is deposited by a physical vapor deposition process and the copper bulk layer is deposited by an electrochemical plating process.  
     
     
         9 . The method of  claim 1 , wherein the ruthenium layer is deposited by exposing the substrate to a ruthenium precursor during an atomic layer deposition process.  
     
     
         10 . The method of  claim 9 , wherein the ruthenium precursor contains a 2,4-dimethylpentadienyl ligand.  
     
     
         11 . The method of  claim 9 , wherein the ruthenium precursor is selected from the group consisting of bis(2,4-dimethylpentadienyl) ruthenium, (2,4-dimethylpentadienyl) ruthenium (cyclopentadienyl), (2,4-dimethylpentadienyl) ruthenium (methylcyclopentadienyl), (2,4-dimethylpentadienyl) ruthenium (ethylcyclopentadienyl), (2,4-dimethylpentadienyl) ruthenium (isopropylcyclopentadienyl), derivatives thereof, and combinations thereof.  
     
     
         12 . The method of  claim 1 , wherein the ruthenium layer is deposited by sequentially exposing the substrate to a ruthenium precursor and a reagent during an atomic layer deposition process.  
     
     
         13 . The method of  claim 12 , wherein the ruthenium precursor is selected from the group consisting of bis(2,4-dimethylpentadienyl)ruthenium, (2,4-dimethylpentadienyl)ruthenium(cyclopentadienyl), (2,4-dimethylpentadienyl)ruthenium(methylcyclopentadienyl), (2,4-dimethylpentadienyl)ruthenium(ethylcyclopentadienyl), (2,4-dimethylpentadienyl) ruthenium (isopropylcyclopentadienyl), derivatives thereof, and combinations thereof.  
     
     
         14 . The method of  claim 13 , wherein the reagent is selected from the group consisting of hydrogen, atomic hydrogen, ammonia, derivatives thereof, and combinations thereof.  
     
     
         15 . The method of  claim 12 , wherein the ruthenium-containing compound is selected from the group consisting of tris(2,2,6,6-tetramethyl-3,5-heptanedionato) ruthenium, bis(2,4-dimethylpentadienyl)ruthenium, dicarbonyl pentadienyl ruthenium, ruthenium acetyl acetonate, (2,4-dimethylpentadienyl) ruthenium(cyclopentadienyl), bis(2,2,6,6-tetramethyl-3,5-heptanedionato)ruthenium(1,5-cyclooctadiene), (2,4-dimethylpentadienyl)ruthenium(methylcyclopentadienyl), (1,5-cyclooctadiene)ruthenium(cyclopentadienyl), (1,5-cyclooctadiene)ruthenium(methylcyclopentadienyl), (1,5-cyclooctadiene)ruthenium(ethylcyclopentadienyl), (2,4-dimethylpentadienyl)ruthenium(ethylcyclopentadienyl), (2,4-dimethylpentadienyl)ruthenium(isopropylcyclopentadienyl), bis(N,N-dimethyl 1,3-tetramethyl diiminato)ruthenium(1,5-cyclooctadiene), bis(N,N-dimethyl 1,3-dimethyl diiminato)ruthenium(1,5-cyclooctadiene), bis(allyl)ruthenium(1,5-cyclooctadiene), ((6-C 6 H 6 )ruthenium(1,3-cyclohexadiene), bis(1,1-dimethyl-2-aminoethoxylato)ruthenium(1,5-cyclooctadiene), bis(1,1-dimethyl-2-aminoethylaminato)ruthenium(1,5-cyclooctadiene), derivatives thereof, and combinations thereof.  
     
     
         16 . The method of  claim 15 , wherein the reagent is selected from the group consisting of hydrogen, atomic hydrogen, ammonia, nitrogen, silane, disilane, dimethylsilane, methylsilane, borane, diborane, triethylborane, derivatives thereof, and combinations thereof.  
     
     
         17 . The method of  claim 12 , wherein the ruthenium layer has a thickness within a range from about 10 Å to about 60 Å.  
     
     
         18 . The method of  claim 9 , wherein the ruthenium layer has a thickness of about 30 Å or less.  
     
     
         19 . A method for forming a material on a substrate, comprising: 
 positioning a substrate containing a dielectric material within a process chamber, wherein vias are contained within the dielectric material and each via has a bottom surface and sidewalls;    forming a barrier layer within the vias and on the dielectric material during a barrier layer deposition process;    exposing a contact layer within the vias by removing material from the bottom surface during a punch-through step;    forming a ruthenium layer on the barrier layer and the contact layer during a ruthenium deposition process; and    filling the vias with a copper material during a copper deposition process.    
     
     
         20 . The method of  claim 19 , wherein the barrier layer contains at least one material selected from the group consisting of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, tungsten nitride, a derivative thereof, and a combination thereof.  
     
     
         21 . The method of  claim 20 , wherein the barrier layer contains a tantalum layer and a tantalum nitride layer.  
     
     
         22 . The method of  claim 19 , wherein the copper material contains a copper seed layer and a copper bulk layer.  
     
     
         23 . The method of  claim 22 , wherein the copper seed layer is deposited by an electroless chemical plating process and the copper bulk layer is deposited by an electrochemical plating process.  
     
     
         24 . The method of  claim 22 , wherein the copper seed layer and the copper bulk layer are deposited by electroless chemical plating processes.  
     
     
         25 . The method of  claim 22 , wherein the copper seed layer is deposited by a chemical vapor deposition process and the copper bulk layer is deposited by an electrochemical plating process.  
     
     
         26 . The method of  claim 22 , wherein the copper seed layer is deposited by a physical vapor deposition process and the copper bulk layer is deposited by an electrochemical plating process.  
     
     
         27 . The method of  claim 19 , wherein the ruthenium layer is deposited by exposing the substrate to a ruthenium precursor during an atomic layer deposition process.  
     
     
         28 . The method of  claim 27 , wherein the ruthenium precursor contains a 2,4-dimethylpentadienyl ligand.  
     
     
         29 . The method of  claim 27 , wherein the ruthenium precursor is selected from the group consisting of bis(2,4-dimethylpentadienyl)ruthenium, (2,4-dimethylpentadienyl)ruthenium(cyclopentadienyl), (2,4-dimethylpentadienyl)ruthenium(methylcyclopentadienyl), (2,4-dimethylpentadienyl)ruthenium(ethylcyclopentadienyl), (2,4-dimethyl pentadienyl)ruthenium(isopropylcyclopentadienyl), derivatives thereof, and combinations thereof.  
     
     
         30 . The method of  claim 19 , wherein the ruthenium layer is deposited by sequentially exposing the substrate to a ruthenium precursor and a reagent during an atomic layer deposition process.  
     
     
         31 . The method of  claim 30 , wherein the ruthenium precursor is selected from the group consisting of bis(2,4-dimethylpentadienyl) ruthenium, (2,4 -dimethylpentadienyl)ruthenium(cyclopentadienyl), (2,4-dimethylpentadienyl)ruthenium(methylcyclopentadienyl), (2,4-dimethylpentadienyl)ruthenium(ethylcyclopentadienyl), (2,4-dimethylpentadienyl) ruthenium(isopropylcyclopentadienyl), derivatives thereof, and combinations thereof.  
     
     
         32 . The method of  claim 31 , wherein the reagent is selected from the group consisting of hydrogen, atomic hydrogen, ammonia, derivatives thereof, and combinations thereof.  
     
     
         33 . The method of  claim 19 , wherein the ruthenium layer has a thickness within a range from about 10 Å to about 60 Å.  
     
     
         34 . The method of  claim 27 , wherein the ruthenium layer has a thickness of about 30 Å or less.  
     
     
         35 . A method for forming a material on a substrate, comprising: 
 positioning a substrate containing a dielectric material having vias formed therein within a process chamber;    forming a barrier layer within the vias and on the dielectric material during a barrier deposition process;    forming a ruthenium layer on the barrier layer during an atomic layer deposition process; and    filling the vias with a copper material during an electroless chemical plating process.    
     
     
         36 . A method for forming a material on a substrate, comprising: 
 exposing a substrate to a pre-clean process, wherein the substrate contains a dielectric layer having vias formed therein;    forming a barrier layer on the dielectric layer and within the vias during a barrier layer deposition process;    forming a ruthenium layer on the barrier layer during an atomic layer deposition process or a physical vapor deposition process; and    filling the vias with a copper material during an electroless chemical plating process or an electrochemical plating process.

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