Semiconductor light emitting element and semiconductor light emitting device

Abstract

For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface. The third side surfaces incline to diverge toward the top surface, and the second side surfaces incline to diverge more toward the top surface to extract part of the light from the light emitting layer externally. The first side surfaces are formed by cleavage along cleavable planes.

1 - 19 . (canceled)  
   
   
       20 . A semiconductor light emitting element comprising: 
 a light emitting layer for emitting light; and    a substrate transparent to the light emitted from the light emitting layer, and having: 
 a top surface on which the light emitting layer is formed;  
 a bottom surface opposed to the top surface; and  
 side surfaces connecting the top surface and the bottom surface,  
   wherein each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the side surface toward the bottom    wherein the second side surfaces incline to diverge toward the top surface to extract part of the light from the light emitting layer externally, and    wherein the first side surfaces incline to converge toward the top surface from the direction vertical to the top surface by an angle equal to or larger than 16° and equal to or smaller than 60°.    
   
   
       21 . A semiconductor light emitting device according to  claim 20  wherein grooves are formed in the bottom surface of the substrate.  
   
   
       22 . A semiconductor light emitting element according to  claim 20  wherein the angle of inclination of the second side surfaces of the substrate relative to the direction vertical to the top surface is equal to or larger than 20° and equal to or smaller than 40°.  
   
   
       23 . A semiconductor light emitting element according to  claim 20  wherein the substrate is made of GaP.  
   
   
       24 . A semiconductor light emitting element according to  claim 20  wherein the light emitting layer includes InGaAlP layer.  
   
   
       25 . A semiconductor light emitting element according to  claim 20  wherein the second side surfaces define a plurality of depressions and protrusions having a height equal to or higher than 1 μm and equal to or lower than 2 μm.  
   
   
       26 . A semiconductor light emitting element according to  claim 21  wherein the angle of inclination of the second side surfaces of the substrate relative to the direction vertical to the top surface is equal to or larger than 20° and equal to or smaller than 40°.  
   
   
       27 . A semiconductor light emitting element according to  claim 21  wherein the substrate is made of GaP.  
   
   
       28 . A semiconductor light emitting element, according to  claim 21  wherein the light emitting layer includes InGaAlP layer.  
   
   
       29 . A semiconductor light emitting element according to clam  21  wherein the second side surfaces define a plurality of depression and protrusions having a height equal to or lower than 1 μm and equal to or lower than 2 μm.