Semiconductor producing device and semiconductor producing method

Abstract

A tubular electrode ( 215 ) and a tubular magnet ( 216 ) are installed on an external section of a processing furnace ( 202 ) for an MMT device. A susceptor ( 217 ) for holding a wafer ( 200 ) is installed inside a processing chamber ( 201 ) of the processing furnace. A gate valve ( 244 ) for conveying the wafer into and out of the processing chamber; and a shower head ( 236 ) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode ( 2 ) and a heater ( 3 ) are installed inside the susceptor ( 217 ) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.

1 . A semiconductor producing device for supplying a processing gas to a vacuum container, exhausting the gas, and processing a substrate, wherein a substrate holding means for holding the substrate is installed inside the vacuum container, a substrate holding section for holding the substrate is provided on one side of the substrate holding means, a substrate heating means is installed in the interior of the substrate holding means, and a space on the interior of the substrate holding means where the substrate heating means is installed, connects to the atmosphere.  
   
   
       2 . A semiconductor producing device according to  claim 1 , wherein the substrate holding means is formed from quartz.  
   
   
       3 . A semiconductor producing device according to  claim 1 , wherein a wire for supplying electric power to the substrate heating means is inserted in a shaft for supporting the substrate holding means.  
   
   
       4 . A semiconductor producing device according to  claim 3 , wherein the shaft is made from quartz.  
   
   
       5 . A semiconductor producing device according to  claim 1 , wherein a wire for supplying electric power to the substrate heating means is made of the same material as the substrate heating means, and connects to a terminal of the substrate heating means after extending from the substrate heating means to an outside section of the substrate holding means.  
   
   
       6 . A semiconductor producing device according to  claim 1 , wherein the substrate heating means is made from silicon carbide.  
   
   
       7 . A semiconductor producing device according to  claim 6 , wherein a wire for supplying electric power to the substrate heating means is made from silicon carbide.  
   
   
       8 . A semiconductor producing device for supplying a processing gas to a vacuum container, exhausting the gas, and processing a substrate, wherein a substrate holding means for holding the substrate is installed inside the vacuum container, a space is formed inside the substrate holding means for installing a high frequency electrode, and the high frequency electrode is installed with a clearance between itself and the walls forming the space, and the space is connected to the atmosphere.  
   
   
       9 . A semiconductor producing device according to  claim 8 , wherein an electrode wire connected to the high frequency electrode is made of the same material as the high frequency electrode, and connects to a terminal of the high frequency electrode after extending from the high frequency electrode to an outside section of the substrate holding means.  
   
   
       10 . A semiconductor producing device according to  claim 8 , wherein the high frequency electrode is made from platinum.  
   
   
       11 . A semiconductor producing device according to  claim 8 , wherein an electrode wire of the high frequency electrode is made from platinum.  
   
   
       12 . A semiconductor producing device for supplying a processing gas to a vacuum container, exhausting the gas, and processing a substrate, wherein a substrate holding means for holding the substrate is installed inside the vacuum container, a substrate holding section for holding the substrate is provided on one side of the substrate holding means, a substrate heating means is installed in the interior of the substrate holding means, and a space on the interior of the substrate holding means where the substrate heating means is installed, connects to the atmosphere; 
 a space is formed inside the substrate holding means for installing a high frequency electrode, and the high frequency electrode is installed with a clearance between itself and the walls forming the space, and the space is connected to the atmosphere.    
   
   
       13 . A producing method for a semiconductor device comprising the steps of: 
 holding a substrate in a substrate holding section provided on one side of a substrate holding means installed inside a vacuum container,    supplying a processing gas to the vacuum container, exhausting the gas, and    heating the substrate by a substrate heating means installed in a space formed in the interior of the substrate holding means and connecting to the atmosphere.    
   
   
       14 . A producing method for a semiconductor device comprising the steps of: 
 holding a substrate in a substrate holding section provided on one side of a substrate holding means installed inside a vacuum container,    supplying a processing gas to the vacuum container, exhausting the gas, and    supplying plasma to the substrate by a high frequency electrode installed with a clearance between itself and the walls forming a space, in the space formed in the interior of the substrate holding means and connecting to the atmosphere.