US2006151015A1PendingUtilityA1

Chemical liquid processing apparatus for processing a substrate and the method thereof

Assignee: TOSHIBA KKPriority: Feb 17, 2000Filed: Mar 10, 2006Published: Jul 13, 2006
Est. expiryFeb 17, 2020(expired)· nominal 20-yr term from priority
H10P 72/0424H10P 72/0408B05D 1/005B05C 11/06Y10S438/906Y10S134/902B05D 3/0406B05C 11/08
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Claims

Abstract

In this disclosure, air flow is formed above chemical liquid film and a move of the chemical liquid is generated by making the air flow into a contact with the surface of chemical liquid. Further, a negative pressure is generated in a space between a processing object substrate and a plate by rotating the plate. Consequently, uniformity of processing of chemical liquid is improved, so that liquid removing step can be carried out effectively. As a result, yield rate of chemical liquid treatment can be improved.

Claims

exact text as granted — not AI-modified
1 . A chemical liquid processing apparatus for processing a substrate using chemical liquid, comprising: 
 a substrate holding portion for holding a substrate;    a chemical liquid nozzle disposed on said substrate holding portion for supplying chemical liquid onto a substrate held by said substrate holding portion so as to form a chemical liquid film on the substrate; and    a gas supply portion for generating a gas flow which contacts the surface of said chemical liquid film so as to generate a flow of chemical liquid on the surface of the chemical liquid film.    
   
   
       2 .- 23 . (canceled)  
   
   
       24 . The chemical liquid processing apparatus according to  claim 1 , wherein the gas supply portion generates the gas flow so as to prevent the chemical liquid film being removed from the substrate.  
   
   
       25 . The chemical liquid processing apparatus according to  claim 24 , wherein the gas supply portion supplies flow generation gas above the substrate so as to generate the gas flow.  
   
   
       26 . The chemical liquid processing apparatus according to  claim 25 , wherein the flow generation gas is an inert gas.  
   
   
       27 . The chemical liquid processing apparatus according to  claim 25 , wherein the flow generation gas contains any one of ozone, oxygen and hydrogen.  
   
   
       28 . The chemical liquid processing apparatus according to  claim 1 , wherein the flow of the chemical liquid is generated in a de-carbonized environment.  
   
   
       29 . The chemical liquid processing apparatus according to  claim 1 , wherein the substrate is rotated when generating the flow of the chemical liquid.  
   
   
       30 . The chemical liquid processing apparatus according to  claim 29  wherein the substrate is rotated continuously.  
   
   
       31 . The chemical liquid processing apparatus according to  claim 29 , wherein the substrate is rotated intermittently.  
   
   
       32 . The chemical liquid processing apparatus according to  claim 29 , wherein the substrate is rotated in a direction coinciding with the direction of the gas flow.

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