Plasma processing apparatus and plasma processing method

Abstract

A plasma processing apparatus includes a vacuum processing chamber having a pair of opposing electrodes for plasma generation, one electrode serving as a sample table for a sample including an insulator film. An electrostatic adsorption film is arranged at the sample table electrode to supply a thermal conductive gas between the film and the sample rear surface. A pressure reducing element is also provided. In addition, arrangements are provided to set a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa and to apply a high frequency power of 30 MHz to 200 MHz between the electrodes. An electrode cover is disposed at the other electrode, and a clearance between the electrodes is 30 mm to 100 mm. The electrode cover includes fine apertures to introduce a fluorine-containing etching gas, and a power supply accelerates ions in the plasma

1 . A plasma processing apparatus comprising: 
 a vacuum processing chamber for processing a sample, including an insulator film, by using plasma;    an outer chamber connected with an evacuation means;    a gas supplying unit for introducing into the vacuum processing chamber a fluorine-containing processing gas;    an upper electrode and a lower electrode for generating plasma therebetween and providing the vacuum processing chamber;    an electrode cover comprised of silicon being provided at the outer surface of the upper electrode; and    a discharge confining means for surrounding the vacuum processing chamber, wherein said discharge confining means is made of SiC.    
   
   
       2 . The plasma processing apparatus according to  claim 1;  the lower electrode having a sample mounting surface; said apparatus further comprising a susceptive cover comprised of silicon near the sample mounting surface.  
   
   
       3 . A plasma processing apparatus comprising: 
 a vacuum processing chamber for processing a sample, including an insulator film, by using plasma;    a gas supplying unit for introducing into the vacuum processing chamber a fluorine-containing processing gas;    an upper electrode and a lower electrode for providing the vacuum processing chamber therebetween;    a high frequency electric power source for supplying a high frequency energy for generating plasma between the upper electrode and the lower electrode;    a bias electric power source connected to the lower electrode to control energy of ions in the plasma;    an electrode cover comprised of silicon being provided at the outer surface of the upper electrode;    a susceptive cover comprised of silicon being provided near a sample mounting surface of the lower electrode; and    a discharge confining means for surrounding the vacuum processing chamber, wherein said discharge confining means is made of SiC;    wherein an inner surface of the vacuum processing chamber is substantially constituted by surfaces of silicon except for the sample mounting surface.    
   
   
       4 . The plasma processing apparatus according to  claim 3 , further comprising an outer chamber located outside of the vacuum processing chamber and connected with an evacuation means.  
   
   
       5 . The plasma processing apparatus according to  claim 10 , wherein the discharge confining means includes at least a gap for evacuating the processing gas from the vacuum processing chamber to the outer chamber.  
   
   
       6 . The plasma processing apparatus according to  claim 1 , wherein the discharge confining means is ring-shaped.  
   
   
       7 . The plasma processing apparatus according to  claim 2 , wherein the discharge confining means is ring-shaped.  
   
   
       8 . The plasma processing apparatus according to  claim 3 , wherein the discharge confining means is ring-shaped.  
   
   
       9 . The plasma processing apparatus according to  claim 1 , wherein the discharge confining means is provided with at least a gap for evacuating the processing gas from the vacuum processing chamber to the outer chamber.  
   
   
       10 . The plasma processing apparatus according to  claim 2 , wherein the discharge confining means is provided with at least a gap for evacuating the processing gas from the vacuum processing chamber to the outer chamber.  
   
   
       11 . The plasma processing apparatus according to  claim 6 , wherein the discharge confining means is provided with at least a gap for evacuating the processing gas from the vacuum processing chamber to the outer chamber.  
   
   
       12 . A plasma processing apparatus comprising: 
 a vacuum container for processing a sample including an insulator film by use of plasma;    a gas supplying unit for introducing into the vacuum container a processing gas containing fluorine;    an upper electrode and lower electrode having plasma generated therebetween;    an electrode cover provided at the bottom surface of the upper electrode;    a discharge confining means defining a vacuum processing chamber in the space between said upper and lower electrodes; and    wherein both said electrode cover and said discharging confining means are made of SiC.    
   
   
       13 . The plasma processing apparatus according to  claim 12:   wherein said lower electrode includes a sample mounting surface, and further comprising a susceptive cover around the sample mounting surface, and wherein said susceptive cover is also made of SiC.    
   
   
       14 . A plasma processing apparatus comprising: 
 a vacuum container for processing of a sample including an insulator film through the use of plasma;    a gas supplying unit for introducing into the vacuum container a processing gas containing fluorine;    an upper electrode and lower electrode for defining a vacuum processing chamber therebetween;    a high frequency electric power source for supplying a high frequency energy for generating plasma in the vacuum processing chamber;    a bias electric power source connected to the lower electrode to control the energy of ions in the plasma;    an electrode cover being provided at the bottom surface of the upper electrode;    a susceptive cover provided around a sample mounting surface of the lower electrode;    a discharge confining means for surrounding the vacuum processing chamber; and    wherein the electrode cover, susceptive cover, and discharge confining means are all made of SiC.    
   
   
       15 . The plasma processing apparatus according to  claim 14  further comprising an outer chamber defined within the vacuum container outside of the vacuum processing chamber, said outer chamber being connected with an evacuation means.  
   
   
       16 . The plasma processing apparatus according to  claim 14  wherein the discharge confining means includes at least a gap for evacuating the processing gas from the vacuum processing chamber to the outer chamber.  
   
   
       17 . The plasma processing apparatus as in  claim 12  wherein the discharge confining means is ring shaped.  
   
   
       18 . The plasma processing apparatus according to  claim 12  and further comprising an outer chamber defined in said vacuum container outside of said vacuum processing chamber and wherein the discharge confining means is provided with at least a gap for evacuating the processing gas from the vacuum processing chamber to the outer chamber.  
   
   
       19 . A plasma etching apparatus comprising: 
 a vacuum container for processing a sample including an insulator film by use of plasma;    an upper electrode and lower electrode having plasma generated there between;    wherein said plasma etching apparatus further comprises:    a gas supplying unit for introducing into the vacuum container a processing gas containing fluorine;    means for generating a plasma between said upper electrode and lower electrode to etch a fine pattern of 0.2 μm or smaller on the sample having a diameter of 300 mm or more;    a bias electric power source connected to the lower electrode to control energy of ions in said plasma;    a discharge confining means defining a vacuum processing chamber in the space between said upper and lower electrodes wherein the discharge confining means is made of SiC;    an electrode cover provided at the bottom surface of the upper electrode, wherein the electrode cover is made of SiC and includes holes to pass the processing gas;    a susceptive cover, made of SiC, provided around a sample mounting surface of the lower electrode.    
   
   
       20 . A plasma etching apparatus comprising: 
 a vacuum container for processing a sample including an insulator film by use of plasma;    an upper electrode and lower electrode having plasma generated therebetween;    wherein said plasma etching apparatus further comprises:    a gas supplying unit for introducing into the vacuum container a processing gas containing fluorine;    means for generating a plasma with a density of 5×10 10  cm −3  to 5×10 11  cm −3  between said upper electrode and lower electrode to etch a fine pattern of 0.2 μm or smaller on the sample having a diameter of 300 mm or more;    a bias electric power source connected to the lower electrode to control energy of ions in said plasma;    a discharge confining means defining a vacuum processing chamber in the space between said upper and lower electrodes wherein the discharge confining means is made of SiC;    an electrode cover provided at the bottom surface of the upper electrode, wherein the electrode cover is made of SiC and includes hole to pass the processing gas; and    a susceptive cover made of SiC provided around the sample mounting surface of the lower electrode.