MEMS device package and method for manufacturing the same

Abstract

A micro electromechanical system (MEMS) device package and a method of manufacturing the same are provided. The MEMS device package includes: a device substrate with a MEMS active device being formed on the top surface thereof; internal electrode pads, each of which is positioned on the opposite side of the MEMS active device and electrically connected to the MEMS active device; sealing pads positioned outside of the internal electrode pads; a closure substrate joined to the device substrate through the sealing pads, the closure substrate having via holes formed at the areas where the internal electrode pads are positioned; and external electrode pads formed on the top surface of the closure substrate in such a way that the external electrode pads are electrically connected to the internal electrode pads through the via holes. The internal electrode pads and the sealing pads are formed from an identical material such as Au and thus the device substrate and the closure substrate are bonded to each other with direct bonding such as Au—Au direct bonding via the sealing pads.

1 . A micro electromechanical system (MEMS) device package comprising: 
 a device substrate with a MEMS active device being formed on a top surface thereof;    internal electrode pads, each of which is positioned on the opposite side of the MEMS active device and electrically connected to the MEMS active device;    sealing pads positioned outside of the internal electrode pads;    a closure substrate joined to the device substrate through the sealing pads, the closure substrate comprising via holes formed at the areas where the internal electrode pads are positioned; and    external electrode pads formed on the top surface of the closure substrate in such a way that the external electrode pads are connected to the internal electrode pads through the via holes.    
   
   
       2 . The MEMS device package of  claim 1 , wherein the internal electrode pads and the sealing pads are formed from an identical material and the device substrate and the closure substrate are bonded to each other with direct bonding using a material which is identical to the material forming the internal electrode pads and the sealing pads.  
   
   
       3 . The MEMS device package of  claim 1 , wherein the external electrode pads are formed from a material identical to the material which forms the internal electrode pads and the sealing pads of  claim 2 .  
   
   
       4 . The MEMS device package of  claim 2 , wherein the identical material is Au.  
   
   
       5 . A method of manufacturing a micro electromechanical system (MEMS) device package, the method comprising: 
 a) providing a device substrate having a MEMS active device and one or more lead lines electrically connected with the MEMS active device;    b) forming, on a closure substrate, internal electrode pads and sealing pads positioned outside of the internal electrode pads to a predetermined height;    c) bonding the device substrate and the closure substrate to each other through the sealing pads in such a way that the MEMS active device is positioned in the space provided by the internal electrode pads and the internal electrode pads come into contact with the lead lines;    d) polishing the closure substrate to a predetermined thickness;    e) forming via holes at the positions where the internal electrode pads are positioned on the closure substrate; and    f) forming external electrode pads which are electrically connected with the internal electrode pads through the via holes.    
   
   
       6 . The method of  claim 5 , wherein the forming of internal electrode pads and sealing pads on a closure substrate comprises: 
 b1) coating a seed layer on the entire surface of the closure substrate;    b2) forming a plating frame for use in forming the internal electrode pads and the sealing pads on the seed layer through a photolithography process;    b3) electrically plating a material, which is identical to the material forming the seed layer on the closure substrate, over the plating frame; and    b4) removing the plating frame.    
   
   
       7 . The method of  claim 6 , wherein a material used for the seed layer is Au.  
   
   
       8 . The method of  claim 7 , wherein Au is coated to a thickness of about 1,000 Å.  
   
   
       9 . The method of  claim 5 , wherein the bonding of the device substrate and the closure substrate to each other through the sealing pads employs direct bonding which uses a material identical to the material forming the internal electrode pads and the sealing pads.  
   
   
       10 . The method of  claim 9 , wherein the identical material is Au.  
   
   
       11 . The method of  claim 10 , wherein the direct bonding using Au is performed at a temperature of 320±10° C. within about 20 minutes.  
   
   
       12 . The method of  claim 5 , wherein the thickness of the closure substrate in the step d) is about 40 μm.  
   
   
       13 . The method of  claim 5 , wherein, to form via holes, the closure substrate is Inductively Coupled Plasma (ICP)-etched.  
   
   
       14 . The method of  claim 5 , wherein the forming of external electrode pads comprises sputtering a material which is identical to the material forming the internal electrode pads and the sealing pads.  
   
   
       15 . The method of  claim 14 , the material sputtered to form external electrode pads is Au.