Semiconductor manufacturing apparatus and manufacturing method of semiconductor device

Abstract

According to an aspect of the present invention, a semiconductor manufacturing apparatus, including: a treatment chamber configured to house a substrate; an electrode which is disposed in said treatment chamber and on which the substrate is placed; a robot arm configured to convey the substrate to said electrode; and a sensor configured to detect a detection pattern of a focus ring which is disposed on an outer peripheral edge portion of said electrode, surrounds an peripheral edge of the substrate placed on said electrode and has the detection pattern, wherein clearance between the substrate and the focus ring is adjusted based on detection result of said sensor, is provided.

1 . A semiconductor manufacturing apparatus, comprising: 
 a treatment chamber configured to house a substrate;    an electrode which is disposed in said treatment chamber and on which the substrate is placed;    a robot arm configured to convey the substrate to said electrode; and    a sensor configured to detect a detection pattern of a focus ring which is disposed on an outer peripheral edge portion of said electrode, surrounds an peripheral edge of the substrate placed on said electrode and has the detection pattern,    wherein clearance between the substrate and the focus ring is adjusted based on detection result of said sensor.    
   
   
       2 . A semiconductor manufacturing apparatus according to  claim 1 , wherein said sensor is an optical sensor or a metal detector, and the detection pattern is formed of a material with different reflection rate or magnetic permeability from that of a part of the focus ring other than the detection pattern.  
   
   
       3 . A semiconductor manufacturing apparatus according to  claim 1 , wherein said sensor is an optical sensor, and the detection pattern is a recessed portion or a projected portion formed on a surface of the focus ring.  
   
   
       4 . A semiconductor manufacturing apparatus according to  claim 1 , wherein said sensor is provided at said robot arm.  
   
   
       5 . A semiconductor manufacturing apparatus according to  claim 4 , wherein a plurality of said sensors are provided at said robot arm.  
   
   
       6 . A semiconductor manufacturing apparatus according to  claim 1 , wherein said detection pattern is formed in an annular shape.  
   
   
       7 . A semiconductor manufacturing apparatus according to  claim 1 , further comprising: 
 an orienter configured to correct a deviation in a two-dimensional direction of the substrate with respect to said robot arm.    
   
   
       8 . A manufacturing method of a semiconductor device, comprising: 
 conveying a substrate by a robot arm into a treatment chamber in which an electrode is disposed and a focus ring having a detection pattern is disposed on an outer peripheral edge portion of the electrode;    adjusting clearance between the substrate and the focus ring by detecting the detection pattern of the focus ring by a sensor provided at the robot arm and adjusting a position of the robot arm based on the detection result of the sensor;    placing the substrate on the electrode while keeping the adjusted clearance; and    performing plasma treatment for the substrate placed on the electrode.    
   
   
       9 . A manufacturing method of a semiconductor device according to  claim 8 , wherein the sensor is an optical sensor or a metal detector, and the detection pattern is formed of a material with different reflection rate or magnetic permeability from that of a part of the focus ring other than the detection pattern.  
   
   
       10 . A manufacturing method of a semiconductor device according to  claim 8 , wherein the sensor is an optical sensor, and the detection pattern is a recessed portion or a projected portion formed on a surface of the focus ring.  
   
   
       11 . A manufacturing method of a semiconductor device according to  claim 8 , wherein a plurality of the sensors are provided at the robot arm.  
   
   
       12 . A manufacturing method of a semiconductor device according to  claim 8 , wherein the detection pattern is formed into an annular shape.  
   
   
       13 . A manufacturing method of a semiconductor device according to  claim 8 , further comprising: 
 correcting a deviation in a two-dimensional direction of the substrate with respect to the robot arm before the conveying of the substrate.    
   
   
       14 . A manufacturing method of a semiconductor device, comprising: 
 conveying a substrate by a robot arm into a treatment chamber in which an electrode is disposed and a focus ring having a detection pattern is disposed on an outer peripheral edge portion of the electrode;    placing the substrate on the electrode so that the substrate and the focus ring are partially overlay each other and an outer periphery of the substrate is along the detection pattern of the focus ring;    estimating actual positional relationship between the substrate and the focus ring by detecting the detection pattern of the focus ring in the state in which the substrate is placed on the electrode; and    performing plasma treatment for the substrate placed on the electrode.    
   
   
       15 . A manufacturing method of a semiconductor device according to  claim 14 , further comprising: 
 correcting a deviation of the substrate and the focus ring based on the estimated positional relationship after the estimating of the actual positional relationship between the substrate and the focus ring.    
   
   
       16 . A manufacturing method of a semiconductor device according to  claim 14 , further comprising: 
 adjusting clearance between the substrate and the focus ring by detecting the detection pattern of the focus ring by a sensor provided at the robot arm and adjusting a position of the robot arm based on the detection result of the sensor, between the conveying of the substrate and the placing of the substrate.    
   
   
       17 . A manufacturing method of a semiconductor device according to  claim 16 , wherein detection of the detection pattern in the estimating of the actual positional relationship between the substrate and the focus ring is performed by the sensor.  
   
   
       18 . A manufacturing method of a semiconductor device according to  claim 16 , wherein the sensor is an optical sensor or a metal detector, and the detection pattern is formed of a material with different reflection rate or magnetic permeability from a part of the focus ring other than the detection pattern.  
   
   
       19 . A manufacturing method of a semiconductor device according to  claim 16 , wherein the sensor is an optical sensor, and the detection pattern is a recessed portion or a projected portion formed on the surface of the focus ring.  
   
   
       20 . A manufacturing method of a semiconductor device according to  claim 16 , wherein a plurality of the sensors are provided at the robot arm.