US2006137708A1PendingUtilityA1
Photocatalytic auto-cleaning process of stains
Est. expiryDec 28, 2024(expired)· nominal 20-yr term from priority
C03C 2218/112C03C 2217/71C03C 2217/213C04B 41/5041B01J 19/123B01J 2219/0892B08B 7/0057C03C 2217/212C04B 41/87C03C 2217/23C03C 17/256
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Claims
Abstract
The present invention provides a process for photocatalytically treating stains of chilly and turmeric caused on kitchen tiles and platforms by coating a thin film of photocatalyst made of a semiconductor such as titanium dioxide uniformly dispersed in dilute silica sol thereon and using a light source such as a fluorescent lamp to irradiate and photoexcite the photo catalytic thin film by the small amount of UV radiation included in the fluorescent light, resulting in photo decomposition and auto-cleaning of the stains.
Claims
exact text as granted — not AI-modified1 . A process for photocatalytically cleaning stains on a surface, the process comprising:
i) coating the surface with a thin film of a photo-catalytic semi-conductor material having a band gap energy; ii) providing a fluorescent lamp emitting visible light of desired sufficient intensity, the lamp emitting light having wavelength greater 300 nm and UV radiation having band gap energy higher than the semi-conductor in order to photoexcite the semiconductor particulate; iii) energizing the lamp to illuminate surrounding ambience of the surface and impinge UV radiation and visible light on the thin film; iv) exposing the stain on the semiconductor coated surface to fluorescent light to photocatalytically decompose the stain.
2 . A method as claimed in claim 1 wherein the surface is a fixture tile or a platform.
3 . A method a claimed in claim 1 wherein the stain is caused by a spice selected from chilly and turmeric in emulsion with oil and water.
4 . A method as claimed in claim 1 wherein the photo-catalytic semi-conductor material having a band gap energy is TiO 2 .
5 . A process is claimed in claim 1 , wherein the ambience is a domestic kitchen, restaurant kitchen, hospital kitchen and a hotel kitchen.
6 . A process as claimed in claim 1 , wherein the film is impinged by a fluorescent light having about 10% of UV radiation with an intensity of 100 to 350 lux.
7 . A process as claimed in claim 1 , wherein the light source is a fluorescent lamp capable of emitting light including UV radiation having a wavelength of 300 to 700 nm.
8 . A process as claimed in claim 1 , wherein the semiconductor material is anatase form of TiO 2 .
9 . A process as claimed in claim 1 , wherein the film has a thickness of in the range of 0.5 to 5.0 micrometers.
10 . A process as claimed in claim 1 wherein the surface is a glazed tile which is roughened prior to spraying and cheat curing.
11 . A process as claimed in claim 1 , wherein the fluorescent lamp is mounted at a distance of 1 to 3 feet from the surface.
12 . A process as claimed in claim 1 , wherein the contact time of stains on the surface with illumination is in the range of 2 to 6 hours.
13 . A process as claimed in claim 1 wherein the semiconductor material is sprayed in the form of 2 to 5% of TiO 2 powder dispersed in 5 percent silica sol.
14 . A process as claimed in claim 1 wherein the surface is dried and heated to a temperature in the range of 100 to 350° C. for 20 to 60 minutes after coating.
15 . A process as claimed in claim 14 wherein the dried and heated tile is further sprayed with the semiconductor material and then dried and heated to a temperature in the range of 100 to 350° C. for 20 to 60 minutes.
16 . A process as claimed in claim 1 wherein the photocatalyst is in powder form and contains at least 80% by weight of anatase type TiO 2 having a surface area in the range of 25 to 60 m 2 g−1 and X-ray diffraction peaks at 20=25.35 A °; 37.88 A ° and 48.15 A °.
17 . A process as claimed in claim 1 wherein the surface is a ceramic tile, plane glass or a hard acrylic sheet.
18 . A process as claimed in claim 1 wherein the stain is a chilly or turmeric stain in the form of a water dispersion or emulsion with oil with a concentration range of 1 to 5%.
19 . A process as claimed in claim 1 wherein the fluorescent light is varied in the range of 50 to 350 lux.
20 . A process as claimed in claim 1 wherein the irradiation time is varied in the range of 20 to 50 hours.Join the waitlist — get patent alerts
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