Process to improve transistor drive current through the use of strain

Abstract

The present invention provides, in one embodiment, a P-type Metal Oxide Semiconductor (PMOS) device ( 100 ). The device ( 100 ) comprises a tensile-strained silicon layer ( 105 ) located on a silicon-germanium substrate ( 110 ) and silicon-germanium source/drain structures ( 135, 140 ) located on or in the tensile-strained silicon layer ( 105 ). The PMOS device ( 100 ) further includes a channel region ( 130 ) located between the silicon-germanium source/drain structures ( 135, 140 ) and within the tensile-strained silicon layer ( 105 ). The channel region ( 130 ) has a compressive stress ( 145 ) in a direction parallel to an intended current flow ( 125 ) through the channel region ( 130 ). Other embodiments of the present invention include a method of manufacturing the PMOS device ( 200 ) and a MOS device ( 300 ).

1 - 10 . (canceled)  
   
   
       11 . A method of manufacturing a P-type Metal Oxide Semiconductor (PMOS) device, comprising: 
 epitaxially growing a tensile-strained silicon layer on a silicon-germanium substrate;    removing portions of said tensile-strained silicon layer outside of a channel region; and    epitaxially growing silicon-germanium source/drain structures on or in said tensile-strained silicon layer.    
   
   
       12 . The method as recited in  claim 11 , wherein said tensile-strained silicon layer has a thickness between about 10 and about 20 nanometers.  
   
   
       13 . The method as recited in  claim 11 , wherein removing includes removing an about 1 to about 10 nanometer thickness of said tensile-strained silicon layer.  
   
   
       14 . The method as recited in  claim 11 , wherein epitaxially growing includes depositing a mixture of silicon and germanium atoms, said mixture having between about 30 atom percent and about 50 atom percent germanium.  
   
   
       15 - 21 . (canceled)