Conditioner for chemical mechanical planarization pad

Abstract

The present invention provides a conditioner for CMP pad required for global planarization of wafer to achieve high integration of a semiconductor element. The conditioner for CMP pad includes a metal substrate having abrasive particles fixed thereto, a plurality of abrasive particles fixed to the metal substrate, and a layer of metal binder fixing the abrasive particles to the metal substrate. The abrasive particles include at least one pattern. The pattern includes at least one row of abrasive particles and the abrasive particles include bigger abrasive particles and smaller abrasive particles. In addition, a diameter difference between smaller and bigger abrasive particles is 10 to 40%. The present invention ensures uniform dressing of conditioner, superior dressing efficiency and superior performance reproducibility.

1 . A conditioner for Chemical Mechanical Planarization (CMP) pad comprising: 
 a metal substrate having abrasive particles fixed thereto;    a number of abrasive particles fixed to the metal substrate; and    a layer of metal binder fixing the abrasive particles to the metal substrate,    wherein the abrasive particles have at least one pattern, the pattern including at least one row of abrasive particles, the abrasive particles including bigger abrasive particles and smaller abrasive particles, and    wherein a diameter difference between smaller and big abrasive particles is 10 to 40%.    
   
   
       2 . The conditioner for CMP pad according to  claim 1 , wherein the pattern comprises a row of bigger abrasive particles and a row of smaller abrasive particles alternately arranged.  
   
   
       3 . The conditioner for CMP pad according to  claim 1 , wherein the pattern comprises a pattern of bigger abrasive particles and a pattern of smaller abrasive particles alternately arranged.  
   
   
       4 . The conditioner for CMP pad according to  claim 1 , wherein the row of abrasive particles comprises bigger abrasive particles and smaller abrasive particles alternately arranged.  
   
   
       5 . The conditioner for CMP pad according to  claim 1 , wherein the pattern has two rows of bigger abrasive particles and a row of smaller abrasive particles alternately arranged.  
   
   
       6 . The conditioner for CMP pad according to  claim 1  wherein a gap of abrasive particle rows including at lest one bigger abrasive particle is 2.5 to 150 times the average diameter of the bigger abrasive particles.  
   
   
       7 . The conditioner for CMP pad according to  claim 6 , wherein a gap of the abrasive particle rows is 2.5 to 100 times the average diameter of the bigger abrasive particles.  
   
   
       8 . The conditioner for CMP pad according to  claim 1 , wherein the abrasive particles comprise one selected from a group consisting of super-abrasive particle, cubic boron nitride (CBN) particle and diamond particle.  
   
   
       9 . The conditioner for CMP pad according to  claim 6 , wherein the abrasive particles comprise one selected from a group consisting of super-abrasive particle, cubic boron nitride (CBN) and diamond particle.  
   
   
       10 . A conditioner for Chemical Mechanical Planarization (CMP) pad comprising: 
 a metal substrate having abrasive particles fixed thereto;    a number of abrasive particles fixed to the metal substrate; and    a layer of metal binder fixing the abrasive particles to the metal substrate,    wherein the abrasive particles include at least three groups of abrasive particles of different sizes, respectively, the abrasive particles having at least one pattern, each pattern including at least one row of abrasive particles and abrasive particles having at least 3 groups of abrasive particles, and    wherein a diameter difference of abrasive particles between a group of biggest abrasive particles and a group of smallest abrasive particles is 10 to 40%.    
   
   
       11 . The conditioner for CMP pad according to  claim 10 , wherein each of the rows of abrasive particles comprises abrasive particles of equal size, and the rows are repetitively arranged in the order of the size of abrasive particles.  
   
   
       12 . The conditioner for CMP pad according to  claim 10 , wherein the row of abrasive particles comprises abrasive particles including at least 3 groups of abrasive particles; and is repetitively arranged by size of the abrasive particles.  
   
   
       13 . The conditioner for CMP pad according to  claim 10 , wherein a gap of abrasive particle rows including at least one biggest abrasive particle is 2.5 to 150 times the average diameter of the biggest abrasive particle.  
   
   
       14 . The conditioner for CMP pad according to  claim 13 , wherein a gap of abrasive particle rows including at least one biggest abrasive particle is 2.5 to 100 times the average diameter of the biggest abrasive particle.  
   
   
       15 . The conditioner for CMP pad according to  claim 10  wherein the abrasive particles comprise one selected from a group consisting of super abrasive particle, cubic boron nitride (CBN) particle and diamond particle.  
   
   
       16 . The conditioner for CMP pad according to  claim 13 , wherein the abrasive particles comprise one selected from a group consisting of super abrasive particle, cubic boron nitride (CBN) and diamond particle.  
   
   
       17 . A conditioner for Chemical Mechanical Planarization (CMP) pad comprising a plurality of pellets having abrasive particles arranged thereon, wherein the abrasive particles are patterned as described in  claim 1 .  
   
   
       18 . The conditioner for CMP pad according to  claim 17 , wherein the abrasive particles comprise one selected from a group consisting of super abrasive particle, cubic boron nitride (CBN) particle and diamond particle.  
   
   
       19 . A conditioner for CMP pad comprising a plurality of pellets having abrasive particles arranged thereon, wherein the abrasive particles are patterned as described in  claim 10 .  
   
   
       20 . The conditioner for CMP pad according to  claim 19 , wherein the abrasive particles comprise one selected from a group consisting of super abrasive particle, CBN particle and diamond particle.