US2006125065A1PendingUtilityA1

Multi-part lead frame with dissimilar materials

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Individually held — no corporate assignee on recordPriority: Oct 25, 1996Filed: Feb 9, 2006Published: Jun 15, 2006
Est. expiryOct 25, 2016(expired)· nominal 20-yr term from priority
Inventors:S. HinkleJerry M. BrooksDavid J. Corisis
H10W 90/756H10W 74/00H10W 72/9445H10W 72/5522H10W 72/5449H10W 72/951H10W 72/932H10W 72/075H10W 72/59H10W 70/457H10W 70/456H10W 70/442H10W 70/438H10W 70/415H10W 70/411H10W 70/413
52
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Claims

Abstract

A multi-part lead frame semiconductor device assembly is disclosed including a die bonded to a die paddle. A second lead frame including leads is superimposed and bonded onto the first lead frame. Also disclosed is a method for fabricating the multi-part lead frame semiconductor device assembly which utilizes equipment designed for single lead frame processing. If desired, the materials for the multi-part lead frame may be dissimilar.

Claims

exact text as granted — not AI-modified
1 . A multi-part, multi-level lead frame used in conjunction with a semiconductor device assembly, the lead frame comprising: 
 an independently formed die paddle used in conjunction with a semiconductor device; and    an independently formed lead frame having portions attached to the independently formed die paddle, the independently formed lead frame including at least two carriers and a plurality of leads, each lead of the plurality of leads having a length terminating adjacent the semiconductor device used in conjunction with the independently formed die paddle, an electrical conductivity of the lead frame being different than an electrical conductivity of the die paddle.    
   
   
       2 . The multi-part, multi-level lead frame of  claim 1 , wherein a heat conductivity of the die paddle is different than a heat conductivity of the lead frame.  
   
   
       3 . The multi-part, multi-level lead frame of  claim 1 , wherein the die paddle is formed of material selected from the group comprising alloy 42, copper alloy, aluminum alloy, silver alloy, copper-clad Invar, copper-clad molybdenum, ceramic compounds, plastic compounds, glass epoxy-based compounds, and reinforced organic compounds.  
   
   
       4 . The multi-part, multi-level lead frame of  claim 1 , wherein the lead frame is formed of material selected from the group comprising alloy 42, copper alloy, aluminum alloy, and silver alloy.  
   
   
       5 . A semiconductor device assembly comprising: 
 a semiconductor device including an active surface having at least one bond pad formed thereon;    a die paddle having the semiconductor device attached thereto, the die paddle substantially formed of a first material, the die paddle formed on a first level;    a lead frame including at least two carriers and a plurality of leads, each carrier of the at least two carriers having an attachment tab-receiving portion, the lead frame substantially formed of a second material different than the first material of the die paddle, wherein at least one lead of the plurality of leads extends over a semiconductor device attached to the die paddle, does not extend over a semiconductor device attached to the die paddle, overlaps the die paddle, or terminates adjacent the die paddle, the lead frame formed on a second level; and    at least one interconnection between at least one lead of the plurality of leads of the lead frame and the at least one bond pad of the semiconductor device.    
   
   
       6 . The semiconductor device assembly according to  claim 5 , wherein a heat conductivity of the first material of the die paddle is different than that of the second material of the lead frame.  
   
   
       7 . The semiconductor device assembly according to  claim 5 , wherein an electrical conductivity of the second material of the lead frame is different than that of the first material of the die paddle.  
   
   
       8 . The semiconductor device assembly according to  claim 5 , wherein an electrical conductivity of the second material of the lead frame is greater than an electrical conductivity of the die paddle.  
   
   
       9 . The semiconductor device assembly according to  claim 5 , further including an insulating film, the insulating film covering a portion of the active surface of the semiconductor device.  
   
   
       10 . The semiconductor device assembly according to  claim 5 , wherein the first material of the die paddle is selected from the group comprising alloy 42, copper alloy, aluminum alloy, silver alloy, copper-clad Invar, copper-clad molybdenum, ceramic compounds, plastic compounds, glass epoxy-based compounds, and reinforced organic compounds.  
   
   
       11 . The semiconductor device assembly according to  claim 5 , wherein the second material of the lead frame is selected from the group comprising alloy 42, copper alloy, aluminum alloy, and silver alloy.  
   
   
       12 . The semiconductor device assembly according to  claim 5 , wherein the at least one interconnection includes a wire bond.  
   
   
       13 . In combination, a two part mold for molding a semiconductor device assembly having single piece lead frame therein and a semiconductor device assembly, the combination including: 
 a semiconductor device including an active surface having at least one bond pad formed thereon;    a die paddle having the semiconductor device attached thereto, the die paddle substantially formed of a first material, the die paddle formed on a first level;    a lead frame including at least two carriers and a plurality of leads, each carrier of the at least two carriers having an attachment tab-receiving portion, the lead frame substantially formed of a second material different than the first material of the die paddle, wherein at least one lead of the plurality of leads extends over a semiconductor device attached to the die paddle, does not extend over a semiconductor device attached to the die paddle, overlaps the die paddle, or terminates adjacent the die paddle, the lead frame formed on a second level; and    at least one interconnection between at least one lead of the plurality of leads of the lead frame and the at least one bond pad of the semiconductor device.    
   
   
       14 . The combination according to  claim 13 , wherein a heat conductivity of the first material of the die paddle is different than that of the second material of the lead frame.  
   
   
       15 . The combination according to  claim 13 , wherein an electrical conductivity of the second material of the lead frame is different than that of the first material of the die paddle.  
   
   
       16 . The combination according to  claim 13 , wherein an electrical conductivity of the second material of the lead frame is greater than an electrical conductivity of the die paddle.  
   
   
       17 . The combination according to  claim 13 , further including an insulating film, the insulating film covering a portion of the active surface of the semiconductor device.  
   
   
       18 . The combination according to  claim 13 , wherein the first material of the die paddle is selected from the group comprising alloy 42, copper alloy, aluminum alloy, silver alloy, copper-clad Invar, copper-clad molybdenum, ceramic compounds, plastic compounds, glass epoxy-based compounds, and reinforced organic compounds.  
   
   
       19 . The combination according to  claim 13 , wherein the second material of the lead frame is selected from the group comprising alloy 42, copper alloy, aluminum alloy, and silver alloy.  
   
   
       20 . The combination according to  claim 13 , wherein the at least one interconnection includes a wire bond.

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