Contact plating apparatus

Abstract

Embodiments of the invention generally provide a substrate processing system and method. The substrate processing system generally includes a fluid basin configured to contain a plating solution therein, an anode assembly positioned in a lower portion of the fluid basin, a separation membrane positioned across the fluid basin above the anode assembly, a diffusion member positioned across the fluid basin above the separation membrane, and a plating membrane positioned across the fluid basin above the diffusion member. The plating method generally includes immersing the substrate in a plating solution, the plating solution containing metal ions to be plated, contacting a plating surface of the semiconductor substrate with a plating membrane, applying a plating bias to the semiconductor substrate to plate the metal ions in the plating solution positioned adjacent the plating surface of the substrate, removing the plating surface from contact with the plating membrane for a predetermined period of time, and recontacting the plating surface with the plating membrane to continue plating the metal ions onto the plating surface.

1 . A method for electrochemically plating a metal on a semiconductor substrate, comprising: 
 immersing the substrate in a plating solution, the plating solution containing metal ions to be plated;    contacting a plating surface of the semiconductor substrate with a plating membrane;    applying a plating bias to the semiconductor substrate to plate the metal ions in the plating solution positioned adjacent the plating surface of the substrate;    removing the plating surface from contact with the plating membrane for a predetermined period of time; and    recontacting the plating surface with the plating membrane to continue plating the metal ions onto the plating surface.    
   
   
       2 . The method of  claim 1 , further comprising rotating the substrate.  
   
   
       3 . The method of  claim 1 , wherein removing the plating surface from contact with the plating membrane and recontacting the plating surface with the plating membrane are performed periodically.  
   
   
       4 . The method of  claim 1 , further comprising positioning a diffusion member below the plating membrane, the diffusion member being configured to support the plating membrane during plating operations.  
   
   
       5 . The method of  claim 1 , further comprising flowing the plating solution through the plating membrane during plating operations.  
   
   
       6 . The method of  claim 1 , wherein the duration of the removing step corresponds with an amount of time required to replenish depleted plating solution at the plating surface.  
   
   
       7 . The method of  claim 1 , wherein contacting a plating surface of the semiconductor substrate with a plating membrane comprises positioning the substrate adjacent a diffusion member, wherein the plating membrane is between the substrate and the diffusion member.  
   
   
       8 . The method of  claim 1 , wherein the plating membrane is fluid permeable.  
   
   
       9 . The method of  claim 1 , wherein the plating membrane includes fluid supply channels configured to supply electrolyte to the plating surface of the substrate and fluid recirculation channels configured to remove depleted electrolyte from the plating surface.  
   
   
       10 . The method of  claim 1 , further comprising supplying electrolyte to a plurality of recessions formed in the plating membrane.  
   
   
       11 . The method of  claim 10 , wherein the plurality of recessions are in fluid communication with at least one fluid supply channel and at least one fluid recirculation channel.  
   
   
       12 . A method for electrochemically plating a metal on a substrate, comprising: 
 lowering the substrate toward a plating membrane to place the substrate in a plating position wherein a plating solution containing metal ions to be plated;    applying a plating bias for a first period of time to the substrate to plate the metal ions in the plating solution on a plating surface of the substrate;    increasing the distance between the plating membrane and the substrate for a second period of time; and    reducing the distance between the plating membrane and the substrate.    
   
   
       13 . The method of  claim 12 , wherein lowering the substrate comprises: 
 immersing the substrate in the plating solution; and    contacting the plating surface of the substrate with the plating membrane.    
   
   
       14 . The method of  claim 12 , further comprising performing applying the plating bias, increasing the distance and reducing the distance periodically.  
   
   
       15 . The method of  claim 12 , further comprising rotating the substrate.  
   
   
       16 . The method of  claim 12 , wherein the first period of time is an amount of time it takes to deplete the plating solution between the plating membrane and the substrate.  
   
   
       17 . The method of  claim 12 , wherein the second period of time is an amount of time it takes to circulate the plating solution between the plating membrane and the substrate.  
   
   
       18 . A method plating a metal on a substrate, comprising: 
 positioning the substrate in a plating position;    supplying a plating solution to a plating surface of the substrate using a plating membrane;    applying a plating bias to plate the metal on the plating surface;    removing the plating solution from the plating surface using fluid draining channels in the plating membrane; and    repeating the applying the plating bias and removing the plating solution.    
   
   
       19 . The method of  claim 18 , wherein removing the plating solution from the plating surface comprises increasing the distance between the plating surface and the plating membrane.  
   
   
       20 . The method of  claim 18 , further comprising rotating the substrate during the applying the plating bias.