Semiconductor device manufacturing method and semiconductor manufacturing apparatus

Abstract

A semiconductor device manufacturing method comprises a first step of forming, by a thermal chemical vapor deposition method, a silicon nitride film on an object disposed in a reaction container, with bis tertiary butyl amino silane and NH 3 flowing into the reaction container, and a second step of removing silicon nitride formed in the reaction container, with NF 3 gas flowing into the reaction container.

1 . A semiconductor device manufacturing method, comprising: 
 a first step of forming, by a thermal chemical vapor deposition method, a silicon nitride film on an object disposed in a reaction container, with bis tertiary butyl amino silane and NH 3  flowing into the reaction container, and    a second step of removing silicon nitride formed in said reaction container, with NF 3  gas flowing into said reaction container.    
   
   
       2 . A semiconductor device manufacturing method as recited in  claim 1 , further comprising said first step after said second step.  
   
   
       3 . A semiconductor device manufacturing method as recited in  claim 1 , wherein 
 after repeating said first step predetermined times, said silicon nitride formed in said reaction container is removed, with NF 3  gas flowing into said reaction container.    
   
   
       4 . A semiconductor device manufacturing method as recited in  claim 1 , wherein 
 before said silicon nitride formed in said reaction container has a predetermined thickness, said silicon nitride formed in said reaction container is removed, with NF 3  gas flowing into said reaction container.    
   
   
       5 . A semiconductor device manufacturing method as recited in  claim 1 , wherein 
 before said silicon nitride formed in said reaction container has such a thickness as to generate particles on said object, said silicon nitride formed in said reaction container is removed, with NF 3  gas flowing into said reaction container.    
   
   
       6 . A semiconductor device manufacturing method as recited in  claim 1 , wherein 
 said reaction container itself is made of quartz and/or a member made of quartz is used in said reaction container, and    before a thickness of said silicon nitride formed on said quartz is increased to such an extent as to generate particles on said object, NF 3  gas is allowed to flow into said reaction container to remove said silicon nitride formed on said quartz.    
   
   
       7 . A semiconductor device manufacturing method as recited in  claim 6 , wherein 
 said second step is carried out in a state where a pressure in said reaction container is set to 10 Torr or higher.    
   
   
       8 . A semiconductor device manufacturing method as recited in  claim 1 , further comprising a step of purging said reaction container using NH 3  gas at least one of before and after said first step.  
   
   
       9 . A semiconductor manufacturing apparatus comprising a reaction container, wherein 
 a silicon nitride film is formed, by a thermal chemical vapor deposition method, on an object disposed in said reaction container, with bis tertiary butyl amino silane and NH 3  flowing into the reaction container, and    silicon nitride formed in said reaction container is removed, with NF 3  gas flowing into said reaction container.