Top surface roughness reduction of high-k dielectric materials using plasma based processes

Abstract

A system and method for manufacturing semiconductor devices with dielectric layers having a dielectric constant greater than silicon dioxide includes depositing a dielectric layer on a substrate and subjecting the dielectric layer to a plasma to reduce top surface roughness in the dielectric layer.

1 . A method for manufacturing a semiconductor device, comprising: 
 depositing a dielectric layer on a substrate, the dielectric layer having a dielectric constant greater than the dielectric constant of silicon dioxide; and    subjecting the dielectric layer to a plasma, the plasma operable to reduce top surface roughness in the dielectric layer.    
   
   
       2 - 3 . (canceled)  
   
   
       4 . The method of  claim 1  where the resulting high-k comprises hafnium silicon oxy-nitride.  
   
   
       5 . (canceled)  
   
   
       6 . The method of  claim 1 , wherein the dielectric layer comprises hafnium oxide.  
   
   
       7 . (canceled)  
   
   
       8 . The method of  claim 1 , wherein the dielectric layer comprises an oxide from the group of lanthanum oxide, gadolinium oxide, tantalum oxide, yittrium oxide, titanium oxide, chromium oxide, aluminum oxide, and zirconium oxide.  
   
   
       9 - 31 . (canceled)