Ion implantation system and method of monitoring implant energy of an ion implantation device

Abstract

An ion implantation system and method of monitoring implant energy of an ion implantation device. The ion implantation system includes an ion implantation device and a monitoring device. The ion implantation device generates a plurality of charged particles and accelerates them with an accelerating voltage for ion implantation. The monitoring device performs spectroscopic analysis of the charged particles to obtain the real accelerating voltage. Thus, implant energy output by the ion implantation device can be calibrated.

1 . An ion implantation system, comprising: 
 an ion implantation device generating a plurality of charged particles and accelerating the charged particles with a accelerating voltage, generating implant energy necessary for ion implantation; and    a monitor system performing spectroscopy analysis to obtain a velocity profile of the charged particles;    wherein the monitor device calibrates the implantation energy of the ion implantation device according to the velocity profile of the charged particles.    
   
   
       2 . The ion implantation system as claimed in  claim 1  wherein the monitor device comprises a database, comprising a correct relationship between the velocity profile of the charged particles and the accelerating voltage for calibrating the implant energy of the ion implantation device according to the velocity profile of the charged particles.  
   
   
       3 . The ion implantation system as claimed in  claim 1  wherein the monitoring device generates an electromagnetic wave to the charged particles, the electromagnetic wave having a frequency shift after generation, the monitor device obtaining the velocity profile of the charged particles by measuring the frequency shift.  
   
   
       4 . The ion implantation system as claimed in  claim 1  wherein the electromagnetic wave comprises infrared rays.  
   
   
       5 . The ion implantation system as claimed in  claim 1  wherein the ion implantation device generates an plasma environment for ion immersion ion implantation.  
   
   
       6 . A method of monitoring implantation energy of an ion implantation device, comprising: 
 providing an ion implantation device, generating at least one charged particle and accelerating the charged particle with an accelerating voltage to generate ion implant energy necessary for ion implantation;    performing spectroscopy analysis of the accelerated charged particle to obtain a frequency shift; and    calibrating the ion implantation energy of the ion implantation device according to the frequency shift.    
   
   
       7 . The method as claimed in  claim 6  wherein the spectroscopy analysis comprises: 
 generating an electromagnetic wave with a known frequency to the accelerated charged particle, the electromagnetic wave having a frequency shift caused by the velocity of the charged particle; and    measuring the frequency of the electromagnetic wave to obtain the frequency shift.    
   
   
       8 . The method as claimed in  claim 6  wherein the electromagnetic wave comprises infrared rays.  
   
   
       9 . The method as claimed in  claim 6  wherein calibration of the ion implant energy of the ion implantation device comprises: 
 providing a database comprising a correct relationship between the frequency shift and the accelerating voltage;    calculating a real accelerating voltage of the ion implantation device according to the database and the obtained frequency shift; and    calibrating the ion implantation energy of the ion implantation system according to the real accelerating voltage.    
   
   
       10 . The method as claimed in  claim 6  wherein the ion implantation device generates plasma environment for ion immersion ion implantation.