[semiconductor container that prevents crystalization on storage wafers/masks]

Abstract

A semiconductor container molded from a plastic material containing silver that absorb sulfide to prevent crystal formation on masks/wafers carried in the enclosed storage space inside the semiconductor container during a photolithographic process under the radiation of a deep-ultraviolet light source. In an alternate form of the invention, the inside wall of the semiconductor container is coated with a layer of silver to absorb sulfide. In another alternate form of the present invention, blocks of silver are fixedly provided inside the semiconductor container to absorb sulfide in the enclosed storage space.

1 . A semiconductor container made of a plastic material containing power of silver that absorbs sulfide, preventing crystal formation on storage masks/wafers in an enclosed storage space defined in the semiconductor container during a photolithographic process under the radiation of a deep-ultraviolet light source.  
   
   
       2 . The semiconductor container as claimed in  claim 1 , which comprises a container base, and a top cover covering said container base and defining with said container base said enclosed storage space.  
   
   
       3 . The semiconductor container as claimed in  claim 1 , wherein said plastic material is an anti-static plastic material.  
   
   
       4 . A semiconductor container prevents crystal formation on storage masks/wafers in an enclosed storage space defined in the semiconductor container during a photolithographic process under the radiation of a deep-ultraviolet light source, wherein the semiconductor container has a silver coated on an inside wall thereof for absorbing sulfide in said enclosed storage space.  
   
   
       5 . The semiconductor container as claimed in  claim 4 , which comprises a container base, and a top cover covering said container base and defining with said container base said enclosed storage space.  
   
   
       6 . A semiconductor container that prevents crystal formation on storage masks/wafers in an enclosed storage space defined in the semiconductor container during a photolithographic process under the radiation of a deep-ultraviolet light source, wherein the semiconductor container comprising at least one block of silver fixedly provided inside said enclosed storage space for absorbing sulfide.  
   
   
       7 . The semiconductor container as claimed in  claim 6 , which is made of a material containing silver.  
   
   
       8 . The semiconductor container as claimed in  claim 6 , which comprises a container base, and a top cover covering said container base and defining with said container base said enclosed storage space.