Long-wavelength semiconductor light emitting device and its manufacturing method

Abstract

For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growth of a layer (GaAs optical guide layer) anteriorly adjacent to the active layer or immediately before the growth of the active layer. The highly reactive gas may be di-methyl hydrazine or ammonia (NH 3 ), for example.

1 . A long-wavelength semiconductor light emitting device using Ga 1-x In x N y As 1-y-z Sb z  (0<x<1, 0<y<1, 0≦z<1) as an active layer thereof, characterized in that the peak concentration of Al impurity contained in the active layer is lower than or equal to 1×10 19  cm −3 .  
     
     
         2 . The long-wavelength semiconductor light emitting device according to  claim 1  wherein the peak concentration of the Al impurity contained in the active layer is lower than or equal to 5×10 18  cm −3 .  
     
     
         3 . The long-wavelength semiconductor light emitting device according to  claim 1  wherein the active layer has a single-quantum-well structure or a multi-quantum-well structure in which the well layer is made of the Ga 1-x In x N y As 1-y-z Sb z , and the peak concentration of Al impurity contained in the well layer is lower than or equal to 1×10 19  cm −3 .