Semiconductor device and fabricating method of the same

Abstract

Openings are formed by lithography and subsequent dry etching at the portions of a first protective film which correspond to connecting holes of second plugs which will be described later, namely at the portions thereof which align with first plugs, wherein the openings have a diameter greater than that of connecting holes by about 0.4 μm.

1 . A semiconductor device comprising: 
 a semiconductor substrate;    a first insulating film comprising at least a first interlayer insulating film formed on said semiconductor substrate;    a first plug comprising a conductive material which fills a first connecting hole formed in said first insulating film;    a capacitor construction comprising a lower electrode, an upper electrode and a dielectric film therebetween;    a second insulating film comprising at least a laminated-layer construction consisting of a first protective film and a second protective film for preventing degradations of the characteristics of said capacitor construction through a second interlayer insulating film, said second insulating film being formed to cover said capacitor construction; and    a second plug comprising a conductive material which fills a second connecting hole, said second connecting hole being formed in said second insulating film such that said first plug is exposed at least at a portion thereof;    wherein said first protective film is removed at least at the portion which corresponds to said second connecting hole and is in non-contact with said second plug and said first protective film is formed to cover at least said capacitor construction.    
   
   
       2 . The semiconductor device according to  claim 1 , wherein said first protective film is removed only at a portion which corresponds to said second connecting hole so as to have a greater diameter than that of said second connecting hole.  
   
   
       3 . The semiconductor device according to  claim 1 , wherein said first protective film is formed to be an island shape which covers only said capacitor construction.  
   
   
       4 . The semiconductor device according to  claim 1 , wherein a lower-layer protective film for said capacitor construction is formed under said capacitor construction.  
   
   
       5 . The semiconductor device according to  claim 1 , wherein said second protective film is formed to be in contact with said second plug.  
   
   
       6 . The semiconductor device according to  claim 1 , wherein said first protective film and said second protective film are made of a material containing alumina.  
   
   
       7 . A semiconductor device comprising: 
 a semiconductor substrate;    a construction which is pattern-formed above said semiconductor substrate;    an insulating film comprising at least a laminated-layer construction consisting of a first protective film and a second protective film for preventing degradations of the characteristics of said construction through an interlayer insulating film, said insulating film being formed to cover said construction; and    a plug comprising a conductive material which fills a connecting hole formed in said insulating film;    wherein said first protective film is removed at least at the portion which corresponds to said connecting hole and is in non-contact with said plug and said first protective film is formed to cover at least said construction.    
   
   
       8 . The semiconductor device according to  claim 7 , wherein said first protective film is removed only at the portion which corresponds to said connecting hole so as to have a greater diameter than that of said connecting hole.  
   
   
       9 . The semiconductor device according to  claim 7 , wherein said first protective film is formed to be an island shape which covers only said construction.  
   
   
       10 . The semiconductor device according to  claim 7 , wherein said second protective film is formed to be in contact with said second plug.  
   
   
       11 . The semiconductor device according to  claim 7 , wherein said first protective film and said second protective film are made of a material containing alumina.  
   
   
       12 . The semiconductor device according to  claim 7 , wherein another plug is formed in a layer lower than said plug and said another plug is electrically connected to said plug.  
   
   
       13 . A fabricating method of a semiconductor device comprising the steps of: 
 forming a first insulating film comprising at least a first interlayer insulating film on a semiconductor substrate;    forming a first connecting hole in said first insulating film and forming a first plug comprising a conductive material which fills said first connecting hole;    forming a capacitor construction comprising a lower electrode, an upper electrode and a dielectric film interposed therebetween;    forming a second insulating film comprising at least a laminated-layer construction consisting of a first protective film and a second protective film for preventing degradations of the characteristics of said capacitor construction through a second interlayer insulating film, said second insulating film covering said capacitor construction; and    forming a second connecting hole in said second insulating film such that said first plug is exposed at least at a portion thereof and forming a second plug comprising a conductive material which fills said second connecting hole;    wherein after forming said first protective film and prior to forming said second interlayer insulating film, said first protective film is processed such that said first protective film is removed at least at the portion which corresponds to said second connecting hole and said first protective film is left to cover said capacitor construction.    
   
   
       14 . The fabricating method according to  claim 13 , wherein after formation said first protective film and prior to forming said second interlayer insulating film, said first protective film is processed such that said first protective film is removed only at the portion which corresponds to said second connecting hole to have a greater diameter than that of said second connecting hole.  
   
   
       15 . The fabricating method according to  claim 13 , wherein after forming said first protective film and prior to forming said second interlayer insulating film, said first protective film is processed such that said first protective film is formed to be an island shape which covers only said capacitor construction.  
   
   
       16 . The fabricating method according to  claim 13 , wherein a lower-layer protective film for said capacitor construction is formed prior to forming said capacitor construction.  
   
   
       17 . The fabricating method according to  claim 13 , wherein said process which is applied to said first protective film is not applied to said second protective film and said process is applied only to said first protective film.  
   
   
       18 . The fabricating method according to  claim 13 , wherein said first protective film and said second protective film are made of a material containing alumina.  
   
   
       19 . A fabricating method of a semiconductor device comprising the steps of: 
 pattern-forming a construction above a semiconductor substrate;    forming an insulating film comprising at least a laminated-layer construction consisting of a first protective film and a second protective film for preventing degradations of the characteristics of said construction through an interlayer insulating film, said insulating film covering said construction; and    forming a connecting hole in said insulating film and forming a plug comprising a conductive material which fills said connecting hole;    wherein after forming said first protective film and prior to forming said second interlayer insulating film, said first protective film is processed such that said first protective film is removed at least at the portion which corresponds to said second connecting hole and said first protective film is left to cover at least said capacitor construction.    
   
   
       20 . The fabricating method according to  claim 19 , wherein after formation said first protective film and prior to forming said second interlayer insulating film, said first protective film is processed such that said first protective film is removed only at the portion which corresponds to said second connecting hole to have a greater diameter than that of said second connecting hole.  
   
   
       21 . The fabricating method according to  claim 19 , wherein after forming said first protective film and prior to forming said second interlayer insulating film, said first protective film is processed such that said first protective film is formed to be an island shape which covers only said capacitor construction.  
   
   
       22 . The fabricating method according to  claim 19 , further comprising the step of forming another insulating film on said semiconductor substrate and forming another plug in said another insulating film, prior to the pattern formation of said construction; 
 wherein said plug is formed so as to be electrically connected to said another plug.    
   
   
       23 . The fabricating method according to  claim 19 , wherein said process which is applied to said first protective film is not applied to said second protective film and said process is applied to only said first protective film.  
   
   
       24 . The fabricating method according to  claim 19 , wherein said first protective film and said second protective film are made of a material containing alumina.  
   
   
       25 . A fabricating method of a semiconductor device comprising the steps of: 
 forming an interlayer insulating film above a semiconductor substrate;    pattern-forming a connecting hole in said interlayer insulating film;    embedding an oxidation-prone conductive material in said connecting hole; and    smoothing the surface of said conductive material to form a plug comprising said conductive material embedded in said connecting hole;    wherein said conductive material is formed to have a thickness greater than the depth of said connecting hole when embedding said conductive material in said connecting hole.    
   
   
       26 . A fabricating method of a semiconductor device comprising the steps of: 
 forming an interlayer insulating film above a semiconductor substrate;    pattern-forming a connecting hole in said interlayer insulating film;    embedding an oxidation-prone conductive material in said connecting hole; and    smoothing the surface of said conductive material to form a plug comprising said conductive material embedded in said connecting hole;    wherein the deposition temperature of said conductive material is adjusted to a value within the range of from 400 to 500° C. when embedding said conductive material in said connecting hole.    
   
   
       27 . The fabricating method according to  claim 25  further comprising the step of forming an antioxidation film for said plug such that it covers said plug.  
   
   
       28 . The fabricating method according to  claim 25 , wherein a positioning mark having a greater hole diameter than that of said plug is formed in the same layer as said plug outside the formation region of the semiconductor chip, concurrently with the formation of said plug.  
   
   
       29 . The fabricating method according to  claim 25 , wherein said conductive material is tungsten (W).