Crystal growth method of nitride semiconductor

Abstract

The present invention relates to a method of manufacturing a nitride semiconductor, and, more particularly, a crystal growth method of a nitride semiconductor wherein a nitride semiconductor are grown on a nitride buffer layer including aluminums so that it is possible to improve electrical and crystalline characteristics. The invention may be formed on a sapphire substrate.

1 . A method of manufacturing a nitride semiconductor comprising: 
 a first step of forming, on a metal oxide layer, a first nitride buffer layer including said metal;    a second step of forming a bivalent nitride buffer layers on said first nitride buffer layers; and    a third step of forming a nitride semiconductor on said second nitride buffer layer.    
     
     
         2 . The method of manufacturing a nitride semiconductor of  claim 1 , 
 wherein said metal oxide layer is a sapphire substrate and said metal is aluminum.    
     
     
         3 . The method of manufacturing a nitride semiconductor of  claim 1 , 
 wherein in said first step, said first nitride buffer layer including said metal is formed on said metal oxide layer by a crystal growth method;    in said second step, said bivalent nitride buffer layers is formed on said first nitride buffer layers by the crystal growth method; and    in said third step, said nitride semiconductor is formed on said second nitride buffer layer by the crystal growth method.    
     
     
         4 . The method of manufacturing a nitride semiconductor of  claim 1 , 
 wherein said first nitride buffer layer including metal and said second nitride buffer layer include indium.    
     
     
         5 . The method of manufacturing a nitride semiconductor of  claim 1 , 
 wherein said second nitride buffer layer is bivalent nitride layer.    
     
     
         6 . The method of manufacturing nitride semiconductor of  claim 1 , comprising, an additional step of forming a third nitride buffer layer which does not include said metal, on said first nitride buffer layer, after said first step.  
     
     
         7 . The method of manufacturing nitride semiconductor of  claim 1 , wherein said first nitride buffer layer is an AIxGayInzN (0<x≦1, 0≦y≦1, 0≦z≦1) layer.  
     
     
         8 . The method of manufacturing nitride semiconductor of  claim 1 , 
 wherein said third nitride buffer layer is the GaxInyN and (0≦x≦1, 0≦y≦1).    
     
     
         9 . The method of manufacturing nitride semiconductor of  claim 1 , wherein said second nitride buffer layer is a layer of one selected from the group consisting of AIN, GaN, InN, and SiNx.  
     
     
         10 . The method of manufacturing nitride semiconductor of  claim 9 , 
 wherein said nitride semiconductor layer is a GaN layer.    
     
     
         11 . The method of manufacturing nitride semiconductor of  claim 1 , 
 comprising an additional step of forming a nitride film, after the second step.    
     
     
         12 . The method of manufacturing nitride semiconductor of  claim 11 , wherein said nitride film is formed on a sapphire substrate by treating the sapphire substrate at a high temperature and letting ammonia (NH 3 ) flow thereon.  
     
     
         13 . The method of manufacturing nitride semiconductor of  claim 6 , wherein said first nitride buffer layer, said second nitride buffer layer and said third nitride buffer layer are grown at 400˜600° C. to have a thickness of 10˜1000 Å.