Method for manufacturing a magnetic field detecting element

Abstract

A method for manufacturing a magnetic field detecting element having a soft magnetic core formed on a substrate, first and second coils, each having coil lines, arranged above and below the core, the method including forming a seed film on the substrate, removing a portion of the seed film using a predetermined pattern so that coil lines constituting the first coil subsequently formed on the seed film are separated, forming a first plating mold having grooves corresponding to the predetermined pattern on an upper portion of the seed film, forming coil lines constituting the first coil by filling the grooves of the first plating mold with metal, forming the soft magnetic core and the second coil on an upper portion of the substrate and on the seed film where the first coil is formed, and cutting off edges of the substrate so that the separated coil lines are insulated.

1 - 8 . (canceled)  
   
   
       9 . A method for manufacturing a magnetic field detecting element, comprising: 
 forming a well to a predetermined depth in a semiconductor substrate;    forming a first coil on the semiconductor substrate, the first coil being arranged within the well at or below an upper surface of the semiconductor substrate;    forming a first insulating film on an upper portion of the first coil and forming a soft magnetic core on an upper portion of the first insulating film;    forming a second insulating film on an upper portion of the soft magnetic core; and    forming a second coil on an upper portion of the second insulating film.    
   
   
       10 . A method for manufacturing a magnetic field detecting element, comprising: 
 preparing a semiconductor substrate;    forming a well to a predetermined depth in the semiconductor substrate;    forming a first coil consisting of a plurality of coil lines within the well of the semiconductor substrate;    forming a first insulating film on an upper portion of the semiconductor substrate including the well;    forming a soft magnetic core on an upper portion of the first insulating film;    forming a second insulating film on an upper portion of the first insulating film including the soft magnetic core; and    forming a second coil corresponding to the first coil, on an upper portion of the second insulating film.    
   
   
       11 . The method as claimed in  claim 10 , wherein forming the well comprises etching inner sidewalls of the well to be gradually inclined from an upper portion of the well to a bottom of the well.  
   
   
       12 . The method as claimed in  claim 10 , wherein forming the first coil further comprises: 
 forming a first seed film on a surface of the well;    forming a first plating mold having a plurality of grooves on the first seed film;    forming a plurality of coil lines constituting the first coil by filling the plurality of grooves of the first plating mold with metal; and    removing the first plating mold and the first seed film under the first plating mold.    
   
   
       13 . The method as claimed in  claim 12 , wherein filling the plurality of grooves of the first plating mold with metal comprises electric plating.  
   
   
       14 . The method as claimed in  claim 10 , wherein forming the second coil further comprises: 
 forming a via hole by etching the first and second insulating films on both sides of the soft magnetic core;    forming a second seed film on an upper surface of the second insulating film in which the via hole is formed;    forming a second plating mold having a plurality of grooves on the second seed film;    forming a plurality of coil lines constituting a second coil by filling the plurality of grooves of the second plating mold with metal and connecting the first coil with the second coil through the via hole; and    removing the second plating mold and the second seed film under the second plating mold.    
   
   
       15 . The method as claimed in  claim 14 , wherein filling the plurality of grooves of the second plating mold with metal comprises electric plating.  
   
   
       16 . The method as claimed in  claim 10 , further comprising forming a protection film on the semiconductor substrate including the second coil to protect a structure formed thereon.  
   
   
       17 - 20 . (canceled)  
   
   
       21 . The method as claimed in  claim 9 , wherein forming the well comprises etching inner sidewalls of the well to be gradually inclined from an upper portion of the well to a bottom of the well.  
   
   
       22 . The method as claimed in  claim 9 , wherein forming the first coil further comprises: 
 forming a first seed film on a surface of the well;    forming a first plating mold having a plurality of grooves on the first seed film;    forming a plurality of coil lines constituting the first coil by filling the plurality of grooves of the first plating mold with metal; and    removing the first plating mold and the first seed film under the first plating mold.    
   
   
       23 . The method as claimed in  claim 22 , wherein filling the plurality of grooves of the first plating mold with metal comprises electric plating.  
   
   
       24 . The method as claimed in  claim 9 , wherein forming the second coil further comprises: 
 forming a via hole by etching the first and second insulating films on both sides of the soft magnetic core;    forming a second seed film on an upper surface of the second insulating film in which the via hole is formed;    forming a second plating mold having a plurality of grooves on the second seed film;    forming a plurality of coil lines constituting a second coil by filling the plurality of grooves of the second plating mold with metal and connecting the first coil with the second coil through the via hole; and    removing the second plating mold and the second seed film under the second plating mold.    
   
   
       25 . The method as claimed in  claim 24 , wherein filling the plurality of grooves of the second plating mold with metal comprises electric plating.  
   
   
       26 . The method as claimed in  claim 9 , further comprising forming a protection film on the semiconductor substrate including the second coil to protect a structure formed thereon.