Film and method for producing nano-particles for magnetoresistive device

Abstract

A method of generating a thin film for use in a spin valve of a magnetoresistive (MR) sensor having a nano-constricted spacer is provided. The bottom portion of the spin valve is deposited up to the pinned layer, a deposition chamber is provided, and the spacer layer is sputtered thereon. A main ion beam generates ions onto a composite surface including magnetic chips and insulator material. Simultaneously, an assisted ion beam provides ions directly to the substrate, thus improving the softness of the free layer and smoothness of the spacer layer. Neutralizers are also provided to prevent ion repulsion and improve ion beam focus. As a result, a thin film spacer can be formed, and the nano-constricted MR spin valve having low free layer coercivity and low interlayer coupling between the free layer and pinned layer is formed.

1 . A method of producing a granular film, comprising: 
 exposing a target to a first ion beam to generate sputtered particles, said target including a non-magnetic material and a magnetic material;    at a substrate, receiving said sputtered particles including said magnetic material and said non-magnetic material; and    treating said substrate with a second ion beam to form said granular film, wherein said granular film has a coercivity field of less than about 30 Oe.    
     
     
         2 . The method of  claim 1 , further comprising: 
 a neutralizer generating oppositely charged ions to project ions of at least one of the first ion beam and the second ion beam.    
     
     
         3 . The method of  claim 1 , further comprising: 
 producing one of a pinned layer and a free layer by RF or DC sputtering.    
     
     
         4 . The method of  claim 1 , further comprising: 
 etching a surface of the granular film until at least one of the grains is at the surface of the granular film.    
     
     
         5 . A magnetic element comprising: 
 a granular spacer sandwiched between a free layer having an adjustable magnetization direction in response to an external field and a pinned layer having a substantially fixed magnetization direction, said granular spacer comprising an insulative matrix and magnetic grains, wherein at least one of (a) the interlayer coupling between said free layer and said pinned layer is no more than about 50 Oe, and (b) the coercivity of said free layer is no more than about 30 Oe.    
     
     
         6 . The magnetic element of  claim 5 , wherein said granular spacer is made by the following steps: 
 exposing a composed structure to a first beam of ions to generate sputtered particles, said composed structure including a plurality of chips of a magnetic material positioned on a target;    at a substrate including said pinned layer, receiving said sputtered particles including said magnetic material and said insulator;    treating said substrate with a second beam of ions to form said granular spacer, said sputtered magnetic particles forming said magnetic grains, and said sputtered insulator forming said insulative matrix.    
     
     
         7 . The magnetic element of  claim 5 , wherein one of said magnetic grains comprises a nanoparticle having a diameter less than about 10 nm.  
     
     
         8 . The magnetic element of  claim 7 , wherein said magnetic grains comprise crystalline nanoparticles having a diameter less than about 5 nm.  
     
     
         9 . The magnetic element of  claim 5 , wherein said granular spacer has a thickness of less than about 5 nm.  
     
     
         10 . The magnetic element of  claim 5 , wherein the interlayer coupling between said free layer and said pinned layer is less than about 50 Oe.  
     
     
         11 . The magnetic element of  claim 5 , wherein the coercivity of said free layer is less than about 30 Oe.  
     
     
         12 . The magnetic element of  claim 5 , wherein said pinned layer and said free layer each comprise at least one ferromagnetic layer.  
     
     
         13 . The magnetic element of  claim 12 , wherein at least one of said pinned layer and said free layer comprises a plurality of ferromagnetic layers laminated via a non-conductive laminating layer comprising at least one of Cu, Ag, Au, Ru and Rh.  
     
     
         14 . The magnetic element of  claim 5 , further comprising an antiferromagnetic (AFM) layer positioned on said pinned layer opposite said granular spacer, said AFM layer comprising at least one Mn alloy.  
     
     
         15 . The magnetic element of  claim 14 , wherein said at least one Mn alloy comprises PtMn and IrMn.  
     
     
         16 . The magnetic element of  claim 5 , wherein said pinned layer comprises a ferromagnetic layer including at least one of Co, Fe and Ni, antiferromagnetically coupled to a hard magnetic layer comprising at least one of CoSm, XPt, XPtCr and XPtCrB, where X is at least one of Fe, Co and FeCo.  
     
     
         17 . The magnetic element of  claim 5 , wherein a sensing current flows between said free layer and said pinned layer via electrodes at respective top and bottom sides of said magnetic element.  
     
     
         18 . The magnetic element of  claim 3 , wherein said magnetic element is one of a bottom type, a top type and a dual type.  
     
     
         19 . A device comprising: 
 a granular spacer sandwiched between a free layer having an adjustable magnetization direction in response to an external field and a pinned layer having a substantially fixed magnetization direction, said granular spacer comprising an insulative matrix and magnetic grains, wherein at least one of (a) the interlayer coupling between said free layer and said pinned layer is no more than about 50 Oe, and (b) the coercivity of said free layer is no more than about 30 Oe.