Semiconductor device and manufacturing method of semiconductor device

Abstract

A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

1 .- 11 . (canceled)  
     
     
         12 . A semiconductor device, comprising: 
 a wiring pad;    an insulating film, formed on the wiring pad, that has plural contact holes extended to the wiring pad; and    a conducting protective layer, disposed on the wiring pad via the insulating film, that is electrically connected to the wiring pad through the plural contact holes,    wherein the plural contact holes are disposed near a periphery of the wiring pad and not disposed on the wiring pad excepting the periphery of the wiring pad.    
     
     
         13 . (canceled)  
     
     
         14 . The semiconductor device according to  claim 12 , wherein the contact holes have a diameter of 0.5 μm or more to about 10 μm or less.  
     
     
         15 . A semiconductor device, comprising: 
 an insulating film having an opening;    plural insulating pillars disposed in the opening;    a wiring pad embedded in the opening to extend to midway of the opening; and    a conducting protective layer to the wiring pad which is disposed on the wiring pad so to fill the opening.    
     
     
         16 . The semiconductor device according to  claim 15 , wherein the plural insulating pillars have a length of 0.5 μm or more to 10 μm or less between the adjacent pillars.  
     
     
         17 . The semiconductor device according to  claim 12 , wherein a material for the wiring pad is Cu, and a material for the conducting protective layer is Al or an Al alloy.  
     
     
         18 . The semiconductor device according to  claim 15 , wherein a material for the wiring pad is Cu, and a material for the conducting protective layer is a Cu alloy, Al or an Al alloy.  
     
     
         19 .- 25 . (canceled)  
     
     
         26 . The semiconductor device according to  claim 15 , wherein a material for the wiring pad is Cu, and a material for the conducting protective layer is an alloy containing copper and a metal having a higher oxidation tendency than copper.  
     
     
         27 . The semiconductor device according to  claim 26 , wherein the metal having the higher oxidation tendency than copper includes at least one selected from aluminum (Al), titanium (Ti), tantalum (Ta), zirconium (Zr), vanadium (V), tin (Sn), tungsten (W), cobalt (Co), iron (Fe), nickel (Ni), ruthenium (Ru), chromium (Cr), molybdenum (Mo), niobium (Nb), hafnium (Hf), magnesium (Mg), and beryllium (Be).  
     
     
         28 . The semiconductor device according to  claim 26 , wherein the material for the conducting protective layer is a Cu—Al alloy.  
     
     
         29 . The semiconductor device according to  claim 28 , wherein the Cu—Al alloy has an Al component ratio of 2 wt % to 50 wt %.