Selective spacer layer deposition method for forming spacers with different widths

Abstract

A method of forming spacers with different widths on a semiconductor substrate, includes the steps of disposing a first spacer layer over the substrate, defining the first spacer layer into a plurality of spacers of a first width, and disposing a second spacer layer selectively over the first spacer layer of a number of the spacers preselected for the second spacer layer, the predetermined number of the spacers with the second spacer layer each having a second width which is different from the first width.

1 - 24 . (canceled)  
   
   
       25 . A semiconductor device comprising: 
 a substrate;    a plurality of spacers disposed on the substrate;    a first number of the spacers formed by a first spacer layer of a first dielectric material, the first spacer having a first width; and    a second number of the spacers defined by the first spacer layer of the first dielectric material and at least a second spacer layer of a second dielectric material, the second spacer having a second width which is different than the first width, the at least second dielectric material comprising one of an oxygen-rich SiON and a nitrogen-rich SiON.    
   
   
       26 . The semiconductor device according to  claim 25 , wherein the first dielectric material comprises SiO 2  and the second dielectric material comprises the oxygen-rich SiON.  
   
   
       27 . The semiconductor device according to  claim 26 , further comprising a third number of the spacers defined by the first spacer layer of the first dielectric material, the second spacer layer of the second dielectric material, and a third spacer layer of a third dielectric material, the third spacer having a third width which is different than the first and second widths, the third dielectric material comprising the nitrogen-rich SiON.  
   
   
       28 . The semiconductor device according to  claim 25 , further comprising a third number of the spacers defined by the first spacer layer of the first dielectric material, the second spacer layer of the second dielectric material, and a third spacer layer of a third dielectric material, the third spacer having a third width which is different than the first and second widths, the third dielectric material comprising one of the oxygen-rich SiON and the nitrogen-rich SiON.  
   
   
       29 . The semiconductor device according to  claim 25 , wherein the first dielectric material comprises SiN and the second dielectric material comprises the nitrogen-rich SiON.  
   
   
       30 . The semiconductor device according to  claim 29 , further comprising a third number of the spacers defined by the first spacer layer of the first dielectric material, the second spacer layer of the second dielectric material, and a third spacer layer of a third dielectric material, the third spacer having a third width which is different than the first and second widths, the third dielectric material comprising the oxygen-rich SiON.