Polishing composition for a semiconductor substrate

Abstract

A polishing composition containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium; a polishing process of a semiconductor substrate, including the step of polishing a semiconductor substrate with a polishing composition for a semiconductor substrate, containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium; a method for manufacturing a semiconductor device including the step of polishing a semiconductor substrate having a film formed on its surface, the film containing a silicon atom and having a shape with dents and projections, with a polishing pad pressed against a semiconductor substrate at a polishing load of from 5 to 100 kPa in the presence of a polishing composition for a semiconductor substrate, containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium.

1 . A polishing composition for a semiconductor substrate, comprising at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium.  
   
   
       2 . The polishing composition according to  claim 1 , wherein the weight ratio of the aminocarboxylic acid to the ceria particles (aminocarboxylic acid/ceria particles) is from 1/20 to 50/1.  
   
   
       3 . A polishing process of a semiconductor substrate, comprising the step of polishing a semiconductor substrate with a polishing composition for a semiconductor substrate, comprising at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium.  
   
   
       4 . The polishing process according to  claim 3 , wherein the substrate has a film formed on its surface, the film containing a silicon atom and having a shape with dents and projections.  
   
   
       5 . The polishing process according to  claim 3 , wherein the step of polishing comprises the steps of feeding the polishing composition to a substrate to be polished at a rate of from 0.01 to 10 g/min per 1 cm 2  of the substrate, and polishing the substrate with a polishing pad pressed against the substrate at a polishing load of from 5 to 100 kPa.  
   
   
       6 . A method for manufacturing a semiconductor device, comprising the step of polishing a semiconductor substrate having a film formed on its surface, the film containing a silicon atom and having a shape with dents and projections, with a polishing pad pressed against the semiconductor substrate at a polishing load of from 5 to 100 kPa in the presence of a polishing composition for a semiconductor substrate, comprising at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium.