Method and apparatus for oxidizing nitrides

Abstract

A method for oxidizing a nitride film is disclosed, which includes the steps of: providing a nitride film formed on an electrically conductive substrate; irradiating the nitride film with a light beam and getting close to the nitride film with a electrically conductive probe; and exerting a bias between the electrically conductive substrate and the electrically conductive probe. The method can oxidize the nitrides quickly and reduce the cost building a nano-structure in the nitride film. An apparatus for oxidizing a nitride film is also disclosed herewith.

1 - 11 . (canceled)  
   
   
       12 . An apparatus for oxidizing nitrides, comprising: 
 a nitride layer formed on an electrically conductive substrate;    a light source adjacent to said electrically conductive substrate for providing energy to excite the nitrides; and    an electrically conductive probe close to the surface of said nitride layer for controlling the oxidation scope of said nitride layer;    wherein a bias is applied between said electrically conductive substrate and said electrically conductive probe.    
   
   
       13 . The apparatus as claimed in  claim 12 , wherein said electrically conductive substrate is made of a p-type silicon wafer, an n-type silicon wafer, Ge, SiGe, InN, GaN, GaAs, InP, GaP, AlP, InAs, AlAs, AlGaAs, InGaAs, ZnSe, In 2 O 3 :Sn (Tin-doped Indium oxide, ITO), ZnO:F, ZnO:B, SnO 2 :F, ZnSnO 3 , Zn 2 SnO 4 , TiN, Cd 2 SnO 4 , ZnO:Al, ZnO:Ga, ZnO:In, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Au, Zr, Nb, Mo, Rh, Ag, In, Se, Hf, Ta, W, Ir, Pt, Au, or the alloys of above-mentioned metals.  
   
   
       14 . The apparatus as claimed in  claim 12 , wherein said nitride layer is made of Si 3 N 4 , oxynitride, Ge 3 N 4 , TiN, BN, AlN, GaN, InN, InGaN, InAlN, or AlInGaN.  
   
   
       15 . The apparatus as claimed in  claim 12 , wherein said light source is Halogen lamp (254 nm), Nd-YAG (1064 nm, 1320 nm, 532 nm, 354 nm, 66 nm), XeCl (308 nm), XeF (351 nm), KrCl (222 nm), KrF (248 nm), ArF (193 nm), F 2  (157 nm), HeCd (325-441 nm), N 2  (337 nm, 428 nm), Ar (514.5 nm), H 2  (110-162 nm), Dye laser (400-800 nm), GaAs/GaAlAs (708-905 nm), HeNe (632 nm), High-pressure mercury lamp, Deuterium lamp, or Xenon lamp.  
   
   
       16 . The apparatus as claimed in  claim 12 , wherein said electrically conductive probe is a heavily-doped silicon probe, a diamond-like probe, a tungsten probe, or a probe that is plated with a conductive metal.  
   
   
       17 . The apparatus as claimed in  claim 12 , wherein said electrically conductive probe also provides the energy to excite the nitrides.  
   
   
       18 . The apparatus as claimed in  claim 12  further being applied to the oxidation of phosphides, arsenides, or metals.  
   
   
       19 . An apparatus for oxidizing nitrides, comprising: 
 a nitride layer formed on an electrically conductive substrate; and    an optical fiber plated with an electrically conductive material and being close to the surface of said nitride layer for providing the energy that excites the nitrides and controlling the oxidation scope of said nitride layer; and    wherein a bias is applied between said electrically conductive substrate and said electrically conductive probe.    
   
   
       20 . The apparatus as claimed in  claim 19 , wherein said electrically conductive material is a conductive metal, a doped diamond, WC 2 , or doped nitrides.