Protective film agent for laser dicing and wafer processing method using the protective film agent

Abstract

A protective film agent for laser dicing according to the present invention comprises a solution having, dissolved therein, a water-soluble resin and at least one laser light absorber selected from the group consisting of a water-soluble dye, a water-soluble coloring matter, and a water-soluble ultraviolet absorber. The protective film agent is coated on a surface of a wafer, which is to be processed, and is then dried to form a protective film. Laser dicing through the protective film produces chips from the wafer. As a result, deposition of debris can be effectively prevented on the entire face of the chips, including their peripheral edge portions.

1 . A protective film agent for laser dicing, comprising a solution having, dissolved therein, a water-soluble resin and at least one water-soluble laser light absorber selected from the group consisting of a water-soluble dye, a water-soluble coloring matter, and a water-soluble ultraviolet absorber.  
     
     
         2 . The protective film agent for laser dicing according to  claim 1 , wherein solids of the solution have a g absorption coefficient k, for laser light with a wavelength of 355 nm, within a range of 3×10 −3  to 2.5×10 −1  abs·L/g (abs: absorbance).  
     
     
         3 . The protective film agent for laser dicing according to  claim 1 , wherein the laser light absorber is contained in an amount of 0.01 to 10 parts by weight based on 100 parts by weight of the water-soluble resin.  
     
     
         4 . A processing method for a wafer, comprising: 
 coating a surface of the wafer, which is to be processed, with the protective film agent for laser dicing according to  claim 1 , followed by drying, to form a protective film; and    irradiating the surface, which is to be processed, with laser light via the protective film to perform processing.    
     
     
         5 . The processing method according to  claim 4 , wherein a wavelength of the laser light is 355 nm.  
     
     
         6 . The processing method according to  claim 4 , wherein a plurality of semiconductor chips partitioned by streets arranged in a lattice pattern are formed in the wafer, and the streets are irradiated with the laser light via the protective film to form grooves.  
     
     
         7 . The processing method according to  claim 4 , wherein the protective film is removed by washing with water after irradiation with the laser light.