Photovoltaic component and module

Abstract

A photovoltaic component with a silicon wafer that has a basic doping, a light-receiving side, and an electric bonding side opposite the light-receiving side. At least one interdigital semiconductor structure is arranged on the electric bonding side. The interdigital semiconductor structure has at least one n-type semiconductor part-structure and at least one p-type semiconductor part-structure arranged at a certain interval to the n-type semiconductor part-structure. One of the semiconductor part-structures and the silicon wafer form a p-n junction.

1 . A photovoltaic component comprising 
 a silicon wafer having a basic p-type doping, a light-receiving side, and an electric bonding side opposite to the light-receiving side;    an interdigital semiconductor structure comprising an n-type semiconductor part structure and a p-type semiconducting part structure, the semiconductor part structures being arranged such that there is an intervening space between them and the n-type semiconductor part structure forming a p-n junction with the silicon wafer;    whereby the n-type semiconductor part structure comprises a first n-type dopant and a second n-type dopant different from the first n-type dopant.    
     
     
         2 . The photovoltaic component of  claim 1 , wherein the n-type semiconductor part structure further comprises a first contacting part structure for an electric connection with the n-type semiconductor part structure.  
     
     
         3 . The photovoltaic component of  claim 2 , wherein the second n-type dopant has diffused into the silicon wafer from the first contacting part structure.  
     
     
         4 . The photovoltaic component of  claim 1 , wherein the first n-type dopant is an element of the fifth main group of the periodic table.  
     
     
         5 . The photovoltaic component of  claim 4 , wherein the first n-type dopant is phosphorus.  
     
     
         6 . The photovoltaic component of  claim 1 , wherein the second n-type dopant is formed of silver.  
     
     
         7 . The photovoltaic component of  claim 1 , wherein the p-type semiconductor part structure comprises, in addition to the basic p-type doping, another p-type dopant.  
     
     
         8 . The photovoltaic component of  claim 1 , wherein the p-type semiconductor part structure further comprises a second contacting part structure for an electric connection with the p-type semiconductor part structure.  
     
     
         9 . The photovoltaic component of  claim 8 , wherein the p-type semiconductor part structure comprises a p-type dopant that has diffused into the silicon wafer from the second contacting part structure.  
     
     
         10 . The photovoltaic component of  claim 1 , wherein the p-type basic doping comprises an element of the third main group of the periodic table as dopant.  
     
     
         11 . The photovoltaic component of  claim 10 , wherein the p-type basic dopant is boron.  
     
     
         12 . The photovoltaic component of  claim 7 , wherein the other p-type dopant is aluminium.  
     
     
         13 . The photovoltaic component of  claim 1 , wherein the p-type semiconducting part structure comprises the first n-type dopant that has been overcompensated.  
     
     
         14 . The photovoltaic component of  claim 1 , wherein the silicon wafer is a tri-crystalline silicon wafer.  
     
     
         15 . The photovoltaic component of  claim 1 , wherein the silicon wafer is provided with a passivation layer in the intervening space.  
     
     
         16 . A photovoltaic component comprising 
 a silicon wafer doped with a predetermined basic doping,    a light-receiving side, and an electric bonding side opposite to the light-receiving side;    an interdigital semiconductor structure comprising an n-type semiconductor part structure and a p-type semiconducting part structure, the semiconductor part structures being arranged such that there is an intervening space between them and that one of the semiconductor part structures together with the silicon wafer forms a p-n junction;    whereby the n-type semiconductor part structure comprises, in addition to the basic doping, a first n-type dopant and a second n-type dopant different from the first n-type dopant.    
     
     
         17 . The photovoltaic component of  claim 16 , wherein the n-type semiconductor part structure further comprises a first contacting part structure for an electric connection with the n-type semiconductor part structure.  
     
     
         18 . The photovoltaic component of  claim 17 , wherein the second n-type dopant has diffused into the silicon wafer from the first contacting part structure.  
     
     
         19 . The photovoltaic component of  claim 16 , wherein the basic doping comprises phosphorous as dopant, and wherein the first n-type dopant is phosphorus, and wherein the second n-type dopant is formed of silver.  
     
     
         20 . The photovoltaic component of  claim 16 , wherein the silicon wafer is provided with a passivation layer in the intervening space.