Method of forming a multi-layer semiconductor structure having a seam-less bonding interface

Abstract

A method of forming a multi-layer semiconductor structure includes providing a first layer of a patterned copper bond film having a first predetermined thickness onto a first surface of a first semiconductor. The method further includes providing a second layer of a patterned copper bond film having a second predetermined thickness onto a first surface of a second semiconductor. The first and second semiconductor structures can be aligned, such that the first and second patterned copper bond films are disposed in proximity. A virtually seam-less bond can be formed between the first and second patterned copper bond films to provide the first and second semiconductors as the multi-layer semiconductor structure.

1 . A method of forming a multi-layer semiconductor structure, comprising: 
 (a) providing, to a first predetermined thickness, at least first and second patterned bond films onto a first surface of a first semiconductor structure;    (b) providing, to a second predetermined thickness, a third patterned bond film onto a first surface of a second semiconductor structure;    (c) providing, to a third predetermined thickness, a fourth patterned bond film onto a first surface of a third semiconductor structure;    (d) aligning the first patterned bond film of the first semiconductor structure and the third patterned bond film of the second semiconductor structure;    (e) aligning the second patterned bond film of the first semiconductor structure and the fourth patterned bond film of the second semiconductor structure; and    (f) forming a bond between the first, second and third semiconductor structures.    
   
   
       2 . The method of  claim 1 , wherein step (f) further includes forming the bond using the first, second, third and fourth patterned bond films to provide the multi-layer semiconductor structure.  
   
   
       3 . The method of  claim 1 , wherein forming the bond between the first, second and third semiconductor structures includes forming a bond between first, second and third semiconductor die elements to provide the multi-layer semiconductor structure.  
   
   
       4 . The method of  claim 3 , wherein forming the bond between the first, second and third semiconductor die elements includes forming a bond between the first semiconductor die element having a first geometry, the second semiconductor die element having a second geometry and the third semiconductor die element having a third geometry.