High density direct connect loc assembly

Abstract

An apparatus and method for attaching a semiconductor die to a lead frame wherein the electric contact points of the semiconductor die are relocated to the periphery of the semiconductor die through a plurality of conductive traces. A plurality of leads extends from the lead frame over the conductive traces proximate the semiconductor die periphery and directly attaches to and makes electrical contact with the conductive traces in a LOC arrangement. Alternately, a connector may contact a portion of the conductive trace to make contact therewith.

1 . A method of producing a semiconductor die from a wafer having a plurality of semiconductor dice, the method comprising: 
 forming a semiconductor die having a periphery and an active surface having at least one electric contact point disposed on the active surface; and    forming at least one conductive trace directly on the semiconductor die active surface, the at least one conductive trace comprising a first end electrically contacting at least a portion of the at least one semiconductor die electric contact point and a second end terminating proximate the semiconductor die periphery to expose a portion of the at least one conductive trace at a portion of the periphery of the semiconductor die, the at least one conductive trace formed by extruding a conductive material onto the semiconductor die active surface between the at least one electrical contact point making electrical contact therewith and the semiconductor die periphery to form the at least one conductive trace.    
     
     
         2 . The method of  claim 1 , wherein forming the at least one conductive trace on the semiconductor die active surface comprises: 
 applying an extruded layer of viscous conductive material over the semiconductor die active surface, the viscous conductive material making electrical contact with the at least one semiconductor die electric contact point;    applying a layer of etch resist material over the conductive material layer;    masking and etching the etch resist material layer to form a trace pattern, the trace pattern extending from the at least one semiconductor die electric contact point to the semiconductor die periphery; and    etching the conductive material layer to form the at least one conductive trace.    
     
     
         3 . The method of  claim 2 , wherein forming the at least one conductive trace on the semiconductor die active surface further comprises stripping the etch resist material forming the trace pattern to expose the at least one conductive trace.  
     
     
         4 . The method of  claim 1 , wherein forming the at least one conductive trace on the semiconductor die active surface comprises: 
 placing a silk screen over the semiconductor die active surface, the silk screen comprising a permeable portion in a shape of at least one desired conductive trace; and    applying a substantially liquid viscous conductive material to the silk screen, the liquid viscous conductive material passing through the silk screen permeable portion to form the at least one conductive trace.    
     
     
         5 . The method of  claim 1 , wherein forming the at least one conductive trace on the semiconductor die active surface comprises: 
 applying a layer of etch resist material over the semiconductor die active surface;    masking and etching the etch resist material layer to form the at least one recessed conductive trace pattern exposing at least a portion of the at least one semiconductor die electric contact point and extending to the semiconductor die periphery; and    disposing an extruded viscous conductive material within the at least one recessed conductive trace pattern to form the at least one conductive trace.    
     
     
         6 . A method of producing a semiconductor die from a wafer having a plurality of semiconductor dice, the method comprising: 
 forming a semiconductor die having a periphery and an active surface having at least one electric contact point disposed on the active surface; and    forming at least one conductive trace directly on the semiconductor die active surface, the at least one conductive trace comprising a first end electrically contacting at least a portion of the at least one semiconductor die electric contact point and a second end terminating adjacent the periphery of the semiconductor die for exposing a portion of the at least one conductive trace at a portion of the periphery of the semiconductor die, the at least one conductive trace formed for an extruded conductive material onto the semiconductor die active surface at a location between the at least one electrical contact point making electrical contact therewith and the semiconductor die periphery to form the at least one conductive trace.    
     
     
         7 . The method of  claim 6 , wherein forming the at least one conductive trace on the semiconductor die active surface comprises: 
 applying an extruded layer of viscous conductive material over the semiconductor die active surface, the viscous conductive material making electrical contact with the at least one semiconductor die electric contact point;    applying a layer of etch resist material over the conductive material layer;    masking and etching the etch resist material layer to form a trace pattern, the trace pattern extending from the at least one semiconductor die electric contact point to the semiconductor die periphery; and    etching the conductive material layer to form the at least one conductive trace.    
     
     
         8 . The method of  claim 7 , wherein forming the at least one conductive trace on the semiconductor die active surface further comprises stripping the etch resist material forming the trace pattern to expose the at least one conductive trace.  
     
     
         9 . The method of  claim 6 , wherein forming the at least one conductive trace on the semiconductor die active surface comprises: 
 placing a silk screen over the semiconductor die active surface, the silk screen comprising a permeable portion in a shape of at least one desired conductive trace; and    applying a substantially liquid viscous conductive material to the silk screen, the liquid viscous conductive material passing through the silk screen permeable portion to form the at least one conductive trace.    
     
     
         10 . The method of  claim 6 , wherein forming the at least one conductive trace on the semiconductor die active surface comprises: 
 applying a layer of etch resist material over the semiconductor die active surface;    masking and etching the etch resist material layer to form the at least one recessed conductive trace pattern exposing at least a portion of the at least one semiconductor die electric contact point and extending to the semiconductor die periphery; and    disposing an extruded viscous conductive material within the at least one recessed conductive trace pattern to form the at least one conductive trace.    
     
     
         11 . A contact formation method for a semiconductor die from a wafer having a plurality of semiconductor dice, the method comprising: 
 forming a semiconductor die having a periphery and an active surface having at least one electric contact point disposed on the active surface; and    forming at least one conductive trace directly on the semiconductor die active surface, the at least one conductive trace comprising a first end electrically contacting at least a portion of the at least one semiconductor die electric contact point and a second end terminating adjacent a portion of the periphery of the semiconductor die for exposing a portion of the at least one conductive trace at a portion of the periphery of the semiconductor die, the at least one conductive trace formed by extruding a conductive material onto the semiconductor die active surface between the at least one electrical contact point making electrical contact therewith and the semiconductor die periphery to form the at least one conductive trace.    
     
     
         12 . The method of  claim 11 , wherein forming the at least one conductive trace on the semiconductor die active surface comprises: 
 applying an extruded layer of viscous conductive material over the semiconductor die active surface, the viscous conductive material making electrical contact with the at least one semiconductor die electric contact point;    applying a layer of etch resist material over the conductive material layer;    masking and etching the etch resist material layer to form a trace pattern, the trace pattern extending from the at least one semiconductor die electric contact point to the semiconductor die periphery; and    etching the conductive material layer to form the at least one conductive trace.    
     
     
         13 . The method of  claim 12 , wherein forming the at least one conductive trace on the semiconductor die active surface further comprises stripping the etch resist material forming the trace pattern to expose the at least one conductive trace.  
     
     
         14 . The method of  claim 11 , wherein forming the at least one conductive trace on the semiconductor die active surface comprises: 
 placing a silk screen over the semiconductor die active surface, the silk screen comprising a permeable portion in a shape of at least one desired conductive trace; and    applying a substantially liquid viscous conductive material to the silk screen, the liquid viscous conductive material passing through the silk screen permeable portion to form the at least one conductive trace.    
     
     
         15 . The method of  claim 11 , wherein forming the at least one conductive trace on the semiconductor die active surface comprises: 
 applying a layer of etch resist material over the semiconductor die active surface;    masking and etching the etch resist material layer to form the at least one recessed conductive trace pattern exposing at least a portion of the at least one semiconductor die electric contact point and extending to the semiconductor die periphery; and    disposing an extruded viscous conductive material within the at least one recessed conductive trace pattern to form the at least one conductive trace.