Pixel structure of in-plane switching liquid crystal display device

Abstract

A pixel structure of an in-plane switching liquid crystal display device includes a glass substrate, a data line, a gate line, a transistor and a common electrode. The data line, the gate line and the transistor are located on the glass substrate. The transistor includes a gate electrode, a source electrode and a drain electrode. The common electrode has an opening disposed directly over the data line, the gate line and the transistor, wherein the opening is wider than the data line.

1 . A pixel structure of an in-plane switching liquid crystal display device, said pixel structure comprising: 
 a glass substrate;    a transistor disposed over said glass substrate, said transistor consisting essentially of a gate electrode, a source electrode and a drain electrode; and    a common electrode disposed over said transistor, said common electrode having an opening located directly over said transistor.    
   
   
       2 . The pixel structure according to  claim 1 , wherein said pixel structure further comprises an organic layer disposed between said transistor and said common electrode.  
   
   
       3 . The pixel structure according to  claim 2 , wherein said organic layer is made of photocured acrylic type material.  
   
   
       4 . The pixel structure according to  claim 1 , wherein said transistor is a bottom gate transistor.  
   
   
       5 . The pixel structure according to  claim 1 , wherein said pixel structure further comprises a black matrix disposed over said common electrode.  
   
   
       6 . The pixel structure according to  claim 1 , further comprising a gate line disposed on said glass substrate, wherein said common electrode is disposed over said gate line with said opening of said common electrode located directly over said gate line.  
   
   
       7 . The pixel structure according to  claim 6 , wherein said gate line is made of a material selected from a group consisting of aluminum-neodymium alloy and molybdenum-tungsten alloy.  
   
   
       8 . The pixel structure according to  claim 1 , further comprising: 
 a data line disposed over said glass substrate; and    a pair of data line fringe field shielding elements respectively disposed at a position adjacent to a lateral side of said data line and on said glass substrate.    
   
   
       9 . The pixel structure according to  claim 8 , wherein said common electrode is disposed over said data line with an opening of said common electrode located directly over said data line.  
   
   
       10 . The pixel structure according to  claim 8 , wherein said data line fringe field shielding element is made of a material selected from a group consisting of aluminum-neodymium alloy and molybdenum-tungsten alloy.  
   
   
       11 . The pixel structure according to  claim 8 , wherein a width of said data line fringe field shielding element is about 0.1 mm to about 30 mm.