Selective hydrogenation process and catalyst

Abstract

A supported catalyst for selective hydrogenation of acetylenes comprising 3-15 wt. % Ni promoted with 0.005-0.2 Pd on a support. The catalyst is prepared by depositing nickel promoted with palladium on a support, containing one or more optional elements from copper, silver, Group IA (Li, Na, K, Rb, Cs, Fr) and Group IIA (Be, Mg, Ca, Sr, Ba, Ra) and B(Zn, Cd,) of the periodic table of elements and characterized as: Range of component Preferably Component wt. % wt. % Ni 3-15 4-11 Cu 0-1  0.0-0.6  Pd 0.005-0.2   0.01-0.1  Ag 0-10 0-5  Group IA  0-2.5  0-1.5 Group IIA & B 0-25 0.1-5

1 . A catalyst for selective hydrogenation of acetylenes comprising Ni deposited with a promoting amount of Pd on an aluminum oxide support, which contains mixed oxides of MAI 2 O 4  with spinel structures, where M is any divalent cation and promoted by Pd.  
   
   
       2 . The catalyst according to  claim 1  wherein the support has BET surface area from about 10 to 100 m 2 /g,  
   
   
       3 . The catalyst according to  claim 2  wherein the support has BET surface area from about 12 to 75 m 2 /g.  
   
   
       4 . The catalyst according to  claim 1  wherein the support comprises alumina prepared by calcining at a temperature from about 900 to 1250° C.  
   
   
       5 . The catalyst according to  claim 4  wherein the support comprises gamma or eta-alumina.  
   
   
       6 . The catalyst according to  claim 1  comprising 3-15 wt. % Ni promoted with 0.005-0.2 wt. % Pd.  
   
   
       7 . The catalyst according to  claim 6  wherein the support has BET surface area from about 10 to 100 m 2 /g,  
   
   
       8 . The catalyst according to  claim 7  wherein the support has BET surface area from about 12 to 75 m 2/g.  
   
   
       9 . The catalyst according to  claim 6  wherein the support comprises alumina prepared by calcining at a temperature from about 900 to 1250° C.  
   
   
       10 . The catalyst according to  claim 9  wherein the support comprises gamma or eta-alumina.  
   
   
       11 . The catalyst according to  claim 1  selected from the group consisting of 3-15 wt. % Ni, 0.005-0.2 Pd wt. %, 0.0-1 wt. % copper, 0.0-10 wt. % Ag, 0-1.5 of at least one member of Group IA and 0.0-25 wt. % of at least one member of Group IIA and IIB.  
   
   
       12 . The catalyst according to  claim 11  wherein the support has BET surface area from about 10 to 100 m 2/g,  
   
   
       13 . The catalyst according to  claim 12  wherein the support has BET surface area from about 12 to 75 m 2 /g.  
   
   
       14 . The catalyst according to  claim 11  wherein the support comprises alumina prepared by calcining at a temperature from about 900 to 1250° C.  
   
   
       15 . The catalyst according to  claim 14  wherein the support comprises gamma or eta-alumina.  
   
   
       16 . The catalyst according to  claim 11  selected from the group consisting of 4-11 wt. % Ni, 0.01-0.1 Pd wt. %, 0.01-0.6 wt. % copper, 0.0-5 wt. % Ag, 0.0-1.5 of at least one member of Group IA and 0.1-5 wt. % of at least one member of Group IIA and IIB deposited on a support.  
   
   
       17 . The catalyst according to  claim 16  wherein the support has BET surface area from about 10 to 100 m 2 /g,  
   
   
       18 . The catalyst according to  claim 17  wherein the support has BET surface area from about 12 to 75 m 2/g.  
   
   
       19 . The catalyst according to  claim 16  wherein the support comprises alumina prepared by calcining at a temperature from about 900 to 1250° C.  
   
   
       20 . The catalyst according to  claim 19  wherein the support comprises gamma or eta-alumina.  
   
   
       21 . A process of selectively hydrogenating acetylenic compounds comprising contacting said acetylenic compounds with a catalyst according to  claim 1 ,  6 ,  11  or  16  in the presence of hydrogen under conditions of temperature and pressure to at least partially hydrogenate said acetylenic compounds to the corresponding compounds having less unsaturation than said acetylenic compounds.