Novel deposition of high-k MSiON dielectric films

Abstract

This disclosure discusses the forming of gate dielectrics in semi conductor devices, and more specifically to forming thin high-k dielectric films on silicon substrates typically using chemical vapor deposition or atomic layer deposition processes. The current invention forms a high-k dielectric film in a single film-forming step using a vapor phase silicon precursor in conjunction with a liquid phase metal precursor, a nitrogen source and an oxygen source for the deposition of a metal silicon oxy nitride (MSiON) film of desired stochiometry. The vapor phase silicon precursor is not coordinated to a metal allowing independent control over feeding of the metal source and the silicon source. Thus, the M/Si ratio can be easily varied over a wide range. Furthermore, the vapor phase silicon precursor, liquid phase metal precursor, nitrogen source and oxygen sources are chlorine free, eliminating the undesirable effects chlorine in the dielectric film and chloride by products in the reaction chamber and exhaust system. Furthermore, the vapor phase silicon precursor, nitrogen source and oxygen sources are carbon free, minimizing the incorporation of carbon in the dielectric film.

1 . A method for forming a MSiON dielectric film comprising the steps of: 
 vaporizing a metal source to form a vaporized metal source;    feeding a plurality of dielectric precursors to a deposition device, wherein said dielectric precursors comprise said vaporized metal source, a silicon source, an oxygen source, and a nitrogen source; and    forming a dielectric film, wherein said dielectric film is formed with the desired final composition absent a post deposition step.    
   
   
       2 . The method of  claim 1 , wherein said silicon source comprises a molecular structure absent carbon.  
   
   
       3 . The method of  claim 1 , wherein said silicon source comprises a molecular structure absent chlorine.  
   
   
       4 . The method of  claim 1 , wherein said silicon source is the vapor phase in the delivery system.  
   
   
       5 . The method of  claim 1 , absent a step wherein said silicon source is vaporized.  
   
   
       6 . The method of  claim 1 , absent a step wherein said silicon source is delivered by bubbling a gas through a liquid silicon source.  
   
   
       7 . The method of  claim 1 , wherein said silicon source has a vapor pressure of at least about 50 torr at 20° C.  
   
   
       8 . The method of  claim 1 , wherein said silicon source is selected from the group consisting of trisilylamine, disilylamine, silylamine, tridisilylamine, aminodisilylamine, tetrasilyldiamine, disilane, derivatives of disilane, and mixtures thereof.  
   
   
       9 . The method of  claim 1 , wherein said silicon source is trisilylamine.  
   
   
       10 . The method of  claim 1 , wherein said oxygen source comprises a molecular structure absent carbon.  
   
   
       11 . The method of  claim 1 , wherein said oxygen source comprises a molecular structure absent chlorine.  
   
   
       12 . The method of  claim 1 , wherein said oxygen source is selected from the group consisting of oxygen, nitrous oxide, ozone, and mixtures thereof.  
   
   
       13 . The method of  claim 1 , wherein said nitrogen source comprises a molecular structure absent carbon.  
   
   
       14 . The method of  claim 1 , wherein said nitrogen source comprises a molecular structure absent chlorine.  
   
   
       15 . The method of  claim 1 , wherein said nitrogen source is the same as said metal source, said silicon source, or said oxygen source.  
   
   
       16 . The method of  claim 1 , wherein said nitrogen source is ammonia.  
   
   
       17 . The method of  claim 1 , wherein said metal source is selected from the group consisting of a dialkylamino, and alkoxy.  
   
   
       18 . The method of  claim 1 , wherein said metal source is an inorganic compound selected from the group consisting of hafnium (Hf, zirconium (Zr), lanthanum (La), yitrium (Y), gadolinium (Gd), europium (Eu), praseodymium (Pr), and mixtures thereof.  
   
   
       19 . The method of  claim 1 , wherein the amounts of said metal source and said silicon source in said desired final composition of said dielectric film are independently controllable.  
   
   
       20 . The method of  claim 1 , wherein said forming a dielectric film step is completed using a chemical vapor deposition process.  
   
   
       21 . The method of  claim 1 , wherein said forming a dielectric film step is completed using an atomic layer deposition process.  
   
   
       22 . A MSiON dielectric film prepared by a process comprising the steps of: 
 vaporizing a metal source to form a vaporized metal source;    feeding a plurality of dielectric precursors to a deposition device, wherein said dielectric precursors comprise said vaporized metal source, a silicon source, an oxygen source, and a nitrogen source; and    forming a dielectric film, wherein said dielectric film is formed with the desired final composition absent a post deposition step.    
   
   
       23 . The dielectric film of  claim 22 , wherein said silicon source comprises a molecular structure absent carbon.  
   
   
       24 . The dielectric film of  claim 22 , wherein said silicon source comprises a molecular structure absent chlorine.  
   
   
       25 . The dielectric film of  claim 22 , wherein said silicon source is in the vapor phase in the delivery system.  
   
   
       26 . The dielectric film of  claim 22 , absent a step wherein said silicon source is vaporized.  
   
   
       27 . The dielectric film of  claim 22 , absent a step wherein said silicon source is delivered by bubbling a gas through a liquid silicon source.  
   
   
       28 . The dielectric film of  claim 22 , wherein said silicon source has a vapor pressure of at least about 50 torr at 20° C.  
   
   
       29 . The dielectric film of  claim 22 , wherein the source of said silicon is selected from the group consisting of trisilylamine, disilylamine, silylamine, tridisilylamine, aminodisilylamine, tetrasilyldiamine, disilane, derivatives of disilane, and mixtures thereof.  
   
   
       30 . The dielectric film of  claim 22 , wherein the source of said silicon is trisilylamine.  
   
   
       31 . The dielectric film of  claim 30 , wherein said metal source comprises hafnium.  
   
   
       32 . The dielectric film of  claim 31 , wherein said oxygen source comprises nitrous oxide.  
   
   
       33 . The dielectric film of  claim 32 , wherein said nitrogen source comprises ammonia.  
   
   
       34 . The dielectric film of  claim 22 , wherein said oxygen source comprises a molecular structure absent carbon.  
   
   
       35 . The dielectric film of  claim 22 , wherein said oxygen source comprises a molecular structure absent chlorine.  
   
   
       36 . The dielectric film of  claim 22 , wherein said oxygen source is selected from the group consisting of oxygen, nitrous oxide, ozone, and mixtures thereof.  
   
   
       37 . The dielectric film of  claim 22 , wherein said nitrogen source comprises a molecular structure absent carbon.  
   
   
       38 . The dielectric film of  claim 22 , wherein said nitrogen source comprises a molecular structure absent chlorine.  
   
   
       39 . The dielectric film of  claim 22 , wherein said nitrogen source is the same as said metals source or said silicon source, or said oxygen source.  
   
   
       40 . The dielectric film of  claim 22 , wherein said nitrogen source is ammonia.  
   
   
       41 . The dielectric film of  claim 22 , wherein said metal source is selected from the group consisting of a dialkylamino, and alkoxy.  
   
   
       42 . The dielectric film of  claim 22 , wherein said metal source is an inorganic compound selected from the group consisting of hafnium (Hf), zirconium (Zr), lanthanum (La), yitrium (Y), gadolinium (Gd), europium (Eu), praseodymium (Pr), and mixtures thereof.