Semiconductor device with a fluorinated silicate glass film as an interlayer metal dielectric film, and manufacturing method thereof

Abstract

A plurality of metal wire layers consisting of a first metal wire layer and a second metal wire layer are formed on a semiconductor substrate. A fluorinated silicate glass film serving as an interlayer metal dielectric film is formed between the first and second metal wire layers. A silicon nitride film serving as a protective insulation film is formed on the fluorinated silicate glass film layer. An adhesive layer made of, for example, a P-SiO film, P-SiON film, or PE-SiO film, is formed between the fluorinated silicate glass film and the silicon nitride film.

1 - 16 . (canceled)  
   
   
       17 . A semiconductor device comprising: 
 a semiconductor substrate;    a plurality of metal wire layers formed on said semiconductor substrate, comprising a highest metal wire layer and a plurality of lower metal wire layers under lying said highest metal wire layer;    a plurality of fluorinated silicate glass films formed respectively between said plurality of lower metal wire layers, and said plurality of fluorinated silicate glass films acting as interlayer metal dielectric film;    a silicon nitride film formed on the highest fluorinated silicate glass film, and said silicon nitride film acting as a protective insulation film; and    an adhesive layer formed between said highest fluorinated silicate glass film and said silicon nitride film,    wherein said silicon nitride film includes a first silicon nitride film and a second silicon nitride film,    the highest metal wire layer is formed in said adhesive layer and said first silicon nitride film, and    said second silicon nitride film is formed on said highest metal wire layer and said first silicon nitride film.    
   
   
       18 . A semiconductor device comprising: 
 a semiconductor substrate;    a plurality of metal wire layers formed on said semiconductor substrate;    a plurality of fluorinated silicate glass film formed between said plurality of metal wire layers, and said plurality of fluorinated silicate glass films acting as an interlayer metal dielectric film; and    a silicon nitride film which is integrally formed on the sides of the highest fluorinated silicate glass film, on said highest fluorinated silicate glass film, and on the highest metal wire layer, and on said silicon nitride film acting as a protective insulation film.    
   
   
       19 . The semiconductor device according to  claim 18 , wherein said silicon nitride film is further formed in areas on said semiconductor substrate around said fluorinated silicate glass film.  
   
   
       20 . The semiconductor device according to  claim 18 , further comprising an adhesive layer formed between said highest fluorinated silicate glass film and said silicon nitride film.