US2006079023A1PendingUtilityA1

Semiconductor device and manufacturing method for the same

Assignee: MATSUSHITA ELECTRIC INDUSTRIAL CO LTDPriority: Jan 29, 2003Filed: Nov 18, 2005Published: Apr 13, 2006
Est. expiryJan 29, 2023(expired)· nominal 20-yr term from priority
H10W 90/754H10W 90/734H10W 90/732H10W 90/724H10W 90/722H10W 90/291H10W 90/20H10W 74/00H10W 72/07554H10W 72/07521H10W 72/07338H10W 72/07141H10W 72/5522H10W 72/5363H10W 72/01225H10W 72/952H10W 72/932H10W 72/884H10W 72/856H10W 72/547H10W 72/536H10W 72/354H10W 72/252H10W 72/251H10W 72/0198H10W 72/073H10W 72/59H10W 72/29H10W 72/012H10W 72/01H10W 90/00H10W 74/114H10W 74/15H10W 74/012H10W 72/20H10W 72/9445H10D 62/117H10W 74/014
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Claims

Abstract

A semiconductor device and a manufacturing method for the same are provided wherein the reliability of connections of fine metal wires connecting a second semiconductor chip to a wiring board can be improved in the case wherein the second semiconductor chip, which is located above the lower, first semiconductor chip, is significantly larger than the first semiconductor chip in a configuration wherein two semiconductor chips are stacked and mounted on a wiring board. In this semiconductor device the rear surface of the first semiconductor chip and the rear surface of the second semiconductor chip are adhered to each other by means of adhesive and the side of the adhesive is inclined from the edge portions of the first semiconductor chip toward the portions of the second semiconductor chip extending from the side of the first semiconductor chip. Therefore, it becomes possible to prevent the occurrence of microcracks in the second semiconductor chip and to prevent the occurrence of defective fine metal wire connections caused by the impact at the time of electrical connection of the second semiconductor chip to the wiring board.

Claims

exact text as granted — not AI-modified
1 - 7 . (canceled)  
     
     
         8 . A manufacturing method for a semiconductor device, comprising: 
 the step of preparing a wiring board having a first wiring electrode and a second wiring electrode as well as a first semiconductor chip having an electrode on the top surface;    the step of electrically connecting the first wiring electrode of said wiring board to the electrode of said first semiconductor chip via a bump;    the step of preparing a second semiconductor chip that is larger than the first semiconductor chip and that has an electrode in at least the periphery of the top surface;    the step of adhering the rear surface of said first semiconductor chip, which is the side opposite to the electrode, and the rear surface of said second semiconductor, which is the side opposite to the electrode, to each other by means of adhesive; and    the step of connecting the electrode of said second semiconductor chip to the second wiring electrode of said wiring board by means of a fine metal wire, wherein    said adhesive is formed so that the side of said adhesive is inclined from the end portions of said first semiconductor chip toward the portions of said second semiconductor chip extending from the sides of the first semiconductor chip at the time of the step of adhering said first semiconductor chip and said second semiconductor chip to each other.    
     
     
         9 . The manufacturing method for a semiconductor device according to  claim 8 , wherein said fine metal wire is connected to the electrode of said second semiconductor chip after a molten ball is formed of the end of said fine metal wire on the second wiring electrode of said wiring board at the time of the step of connecting the second semiconductor chip to the wiring board by means of the fine metal wire.  
     
     
         10 . The manufacturing method for a semiconductor device according to  claim 8 , wherein said wiring board and a passive part are electrically connected to each other at the time of the step of electrically connecting the wiring board to the first semiconductor chip and wherein the rear surface of said second semiconductor chip and the rear surface of said passive part facing the rear surface of said second semiconductor chip are adhered to each other in the case wherein a spacer is intervened therebetween so that the height of the rear surface of said first semiconductor chip and the height of the spacer become approximately equal at the time of the step of adhering said first semiconductor chip to the second semiconductor chip.  
     
     
         11 . The manufacturing method for a semiconductor device according to  claim 8 , wherein said wiring board and a passive part are electrically connected to each other and an underfill resin is placed between said wiring board and said first semiconductor chip at the time of the step of electrically connecting the wiring board to the first semiconductor chip and wherein the rear surface of said second semiconductor chip and the rear surface of said passive part facing the rear surface of said second semiconductor chip are adhered to each other in the case wherein a spacer is intervened therebetween so that the height of the rear surface of said first semiconductor chip and the height of the spacer become approximately equal and a material having a thixotropy greater than that of said underfill resin is used for said spacer at the time of the step of adhering said first semiconductor chip to the second semiconductor chip.

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