Near-field exposure photoresist and fine pattern forming method using the same

Abstract

A near-field photoresist for formation of a fine pattern with by near-field exposure includes an alkali-soluble novalac resin, a diazyde-type photosensitizer which is photoreactive by near-field exposure, a photoacid generator which generates acid by the near-field exposure, and a solvent.

1 . A near-field photoresist for formation of a fine pattern with near-field exposure, comprising: 
 an alkali-soluble novalac resin;    a diazyde-type photosensitizer which is photoreactive by the near-field exposure:    a photoacid generator which generates acid by the near-field exposure; and    a solvent.    
   
   
       2 . A photoresist according to  claim 1 , wherein said alkali-soluble novalac resin has been synthesized through condensation of a phenol component with an aldehyde component in the presence of an acid catalyst.  
   
   
       3 . A photoresist according to  claim 1 , wherein said diazyde-type photosensitizer is a compound capable of being synthesized through esterification between a polyhydroxy compound and quinonediazyde sulfonic acid as a photosensitive group.  
   
   
       4 . A photoresist according to  claim 1 , wherein said photoacid generator is an onium salt or triazine.  
   
   
       5 . A photoresist according to  claim 1 , wherein said solvent is a single solvent selected from the group consisting of propylene glycol monomethyl ether acetate, ethyl lactate, butyl acetate, and 2-heptanone, or is a mixture solvent comprising two or more solvents selected from the group consisting of propylene glycol monomethyl ether acetate, ethyl lactate, butyl acetate, and 2-heptanone.  
   
   
       6 .- 8 . (canceled)