Method to sputter deposit metal on a ferroelectric polymer

Abstract

Methods of depositing various metal layers adjacent to a ferroelectric polymer layer are disclosed. In one embodiment, a collimator may be used during a sputtering process to filter out charged particles from the material that may be deposited as a metal layer. In various embodiments, a metal layer may contain at least one of an intermetallic layer, an amorphous intermetallic layer, and an amorphized intermetallic layer.

1 . An apparatus comprising: 
 an integrated circuit comprising: 
 a first metal layer of at least one of TiN, TaN, TiNSi, and TaNSi, and  
 a layer of ferroelectric polymer material coupled to the first metal layer.  
   
   
   
       2 . The apparatus of  claim 1 , further comprising: 
 a second metal layer coupled to the layer of ferroelectric polymer material.    
   
   
       3 . The apparatus of  claim 2 , wherein the second metal layer comprises: 
 at least one of TiN, TaN, TiNSi, and TaNSi.    
   
   
       4 . The apparatus of  claim 1 , wherein the first metal layer is substantially amorphous.  
   
   
       5 . The apparatus of  claim 2 , wherein the second metal layer is substantially amorphous.  
   
   
       6 . A system comprising: 
 flash memory comprising: 
 an integrated circuit comprising  
 a first metal layer of at least one of TiN, TaN, TiNSi, and TaNSi, and  
 a layer of ferroelectric polymer material coupled to the first metal layer.  
   
   
   
       7 . The system of  claim 6 , further comprising: 
 a second metal layer coupled to the layer of ferroelectric polymer material.    
   
   
       8 . The system of  claim 7 , wherein the second metal layer comprises: 
 at least one of TiN, TaN, TiNSi, and TaNSi.    
   
   
       9 . The system of  claim 6 , wherein the first metal layer is substantially amorphous.  
   
   
       10 . The system of  claim 7 , wherein the second metal layer is substantially amorphous.