Semiconductive substrate cleaning systems
Abstract
In one aspect, the invention includes a method of treating a surface of a substrate. A mixture which comprises at least a frozen first material and liquid second material is provided on the surface and moved relative to the substrate. In another aspect, the invention encompasses a method of treating a plurality of substrates. A treating member is provided proximate a first substrate, and an initial layer of frozen material is formed over a surface of the treating member. A surface of the first substrate is treated by moving at least one of the treating member and the first substrate relative to the other of the treating member and the first substrate. After the surface of the first substrate is treated, the initial layer of frozen material is removed from over the surface of the treating member. The treating member is then provided proximate another substrate, and the surface of the other substrate is treated by moving at least one of the treating member and the second substrate relative to the other of the treating member and the second substrate.
Claims
exact text as granted — not AI-modified1 - 82 . (canceled)
83 . A semiconductive conductive substrate cleaning system comprising a cleaning member operatively proximate an apparatus configured to couple to a semiconductive substrate, wherein the cleaning member is configured to be at least partially coated with a frozen material.
84 . The system of claim 83 wherein the frozen material comprises CO 2 .
85 . The system of claim 83 wherein the cleaning member comprises a brush.
86 . The system of claim 85 wherein the brush comprises a plurality of bristles configured to be at least partially coated with the frozen material.
87 . The system of claim 83 wherein the frozen material comprises both a first composition and a second composition different from the first composition.
88 . The system of claim 87 wherein the first composition comprises CO 2 and the second composition comprises H 2 O.
89 . The system of claim 87 wherein the cleaning member comprises a brush, the brush comprising a plurality of bristles configured to be at least partially coated with the first composition.
90 . The system of claim 89 wherein the at least one of the plurality of bristles of the brush is at least partially coated with the second composition.
91 . The system of claim 83 wherein the semiconductive substrate comprises a monocrystalline silicon wafer.
92 . The system of claim 83 wherein the cleaning member is elevationally below the semiconductive substrate when coupled to the apparatus.
93 . The system of claim 92 wherein:
the cleaning member comprises a first surface extending horizontally to a first periphery; the semiconductive substrate comprises a second surface extending horizontally to a second periphery; and the first surface of the cleaning member extends horizontally beyond the second periphery of the substrate.
94 . The system of claim 93 wherein one or both of the first and second surfaces are substantially planar.
95 . The system of claim 83 wherein the cleaning member comprises both a first and a second cleaning member, the first cleaning member being elevationally above the substrate when coupled to the apparatus, and the second cleaning member being elevationally below the substrate when couple to the apparatus.
96 . The system of claim 95 wherein the frozen material comprises a first composition, the first cleaning member being at least partially coated with the first composition, and wherein the second cleaning member is at least partially coated with a second composition.
97 . The system of claim 96 wherein the first composition is different from the second composition.
98 . The system of claim 96 wherein the second composition is a solid composition.
99 . The system of claim 83 further comprising a liquid material above the frozen material.
100 . The system of claim 99 wherein the liquid material and the frozen material comprise H 2 O.Join the waitlist — get patent alerts
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