Cleaning method and cleaning apparatus for performing the same

Abstract

A cleaning apparatus includes upper and lower nozzle assemblies supplying a cleaning liquid to edge and bottom sections of a semiconductor substrate. The upper nozzle assembly has a first nozzle supplying the cleaning liquid onto the edge section, and second and third nozzles supplying a nitrogen gas for preventing the cleaning liquid from moving into a center portion of the semiconductor substrate. The cleaning liquid supplied to the edge section flows from the edge section towards a side section of the semiconductor substrate due to the rotation of the semiconductor substrate. An ultrasonic wave generator is provided above the edge section for generating ultrasonic waves. The ultrasonic waves are applied to the cleaning liquid supplied onto the edge and bottom sections, thereby improving the cleaning efficiency. The cleaning apparatus has a guide to guide the cleaning liquid supplied to the edge section toward the side section. The cleaning apparatus may effectively remove impurities from the edge, side and bottom sections of the semiconductor substrate.

1 . A method for cleaning a semiconductor substrate, the method comprising the steps of: 
 a) rotating the semiconductor substrate;    b) supplying a cleaning liquid to an edge section of the semiconductor substrate for cleaning the edge section and a side section of the semiconductor substrate; and    c) applying an ultrasonic wave to the cleaning liquid supplied to the edge section.    
   
   
       2 . The method as claimed in  claim 1 , wherein the cleaning liquid is supplied from a center portion of the semiconductor substrate toward the edge section at an incident angle of 30 to 60 degrees.  
   
   
       3 . The method as claimed in  claim 1 , wherein, during the step of supplying the cleaning liquid to the edge section, a nitrogen gas stream is directed onto a first section which is spaced apart from the edge section in a direction of a center portion of the semiconductor substrate by a first predetermined distance to restrict the cleaning liquid from moving toward the center portion.  
   
   
       4 . The method as claimed in  claim 3 , wherein the nitrogen gas stream is directed onto the first section at an incident angle of 30 to 60 degrees from the center portion toward the edge section.  
   
   
       5 . The method as claimed in  claim 3 , wherein, during the step of supplying the cleaning liquid to the edge section, a second nitrogen gas stream is directed onto a second section which is spaced apart from the edge section in the direction of the center portion by a second predetermined distance to secondarily restrict the cleaning liquid from moving toward the center portion.  
   
   
       6 . The method as claimed in  claim 6 , wherein the second nitrogen gas stream is directed onto the second section at an incident angle of 15 to 30 degrees from the center portion towards the edge section.  
   
   
       7 . The method as claimed in  claim 1 , further comprising the step of supplying a second cleaning liquid to a bottom section of the semiconductor substrate simultaneously with the step of supplying the cleaning liquid to the edge section.  
   
   
       8 . The method as claimed in  claim 7 , wherein the cleaning liquid and second cleaning liquid are any one selected from the group consisting of deionized water, a mixture of HF and deionized water, a mixture of NH 4 OH, H 2 O 2  and deionized water, a mixture of NH 4 F, HF, and deionized water, and a mixture of H 3 PO 4  and deionized water.  
   
   
       9 . The method of  claim 1 , wherein the cleaning liquid is any one selected from the group consisting of deionized water, a mixture of HF and deionized water, a mixture of NH 4 OH, H 2 O 2  and deionized water, a mixture of NH 4 F, HF, and deionized water, and a mixture of H 3 PO 4  and deionized water.  
   
   
       10 - 23 . (canceled)