Solid-state imaging device and manufacturing method thereof

Abstract

The solid-state imaging device according to the present invention comprises: a plurality of light-sensitive elements 1 arranged in a matrix form at regular spacings in a photoreceiving region provided on a semiconductor substrate; a plurality of detecting electrodes provided on the semiconductor substrate corresponding to the plurality of the light-sensitive elements for detecting an electrical charge generated by each light-sensitive element; a light-shielding film 58 coating the plurality of detecting electrodes and having an aperture 65 over each light-sensitive element; and a plurality of reflecting walls 62 , which are formed in a grid pattern over the light-shielding film so as to partition the apertures individually over the respective light-sensitive elements, for reflecting a portion of light entering the semiconductor substrate from above onto the aperture on each light-sensitive element. The plurality of reflecting walls are formed so that a middle point of the reflecting walls opposing each other across the aperture is displaced from a center of the aperture toward a center of the photoreceiving region.

1 - 12 . (canceled)  
   
   
       13 . A manufacturing method of a solid-state imaging device, comprising the steps of: 
 forming a plurality of light-sensitive elements and a plurality of apertures in a photoreceiving region provided on a semiconductor substrate;    depositing an insulating film on the aperture;    forming a mask on the insulating film;    forming a reflecting wall after removing the insulating film by using the mask; and    forming a plurality of micro lenses over the reflecting wall and the aperture.    
   
   
       14 . The manufacturing method according to  claim 13 , wherein 
 the plurality of micro lenses disposed in an inner periphery of the photoreceiving region, and the plurality of reflecting walls corresponding to the micro lenses are disposed such that a center of each of the micro lenses and a center of each of the reflecting walls opposing each other are displaced from a center of the aperture toward a center of the photoreceiving region, and    an amount of displacement between the center of the photoreceiving region and the center of the reflecting wall is smaller than that of displacement between the center of the photoreceiving region and the center of the micro lens.    
   
   
       15 . The manufacturing method according to  claim 13 , further comprising a step of depositing a material having light reflectivity to form the reflecting wall, wherein 
 the step of depositing the material having light reflectivity to form the reflecting wall includes the steps of:    depositing a first metal film inside a trench formed by removing the insulating film by sputtering; and    depositing a second metal film over the first metal film by a CVD (Chemical Vapor Deposition) method.    
   
   
       16 . The manufacturing method according to  claim 15 , wherein 
 the step of depositing the material having light reflectivity to form the reflecting wall further includes a step of removing excess first and second metal films lying off the trench by a CMP (Chemical Mechanical Polishing) method.