Organic thin-film transistor and method for manufacturing organic thin-film transistor

Abstract

Disclosed are an organic thin-film transistor and a manufacturing comprising thereof, the organic thin-film transistor comprising a support and provided thereon, a gate electrode, an insulation layer, a source electrode, a drain electrode, and an organic semiconductor layer, the support comprising at least one of resins, and the organic semiconductor layer containing at least one of organic semiconductor materials, wherein a phase transition temperature of one of the organic semiconducting materials is not more than a glass transition point of one of the resins.

1 . An organic thin-film transistor comprising a support and provided thereon, a gate electrode, an insulation layer, a source electrode, a drain electrode, and an organic semiconductor layer, the support comprising at least one of resins, and the organic semiconductor layer containing at least one of organic semiconducting materials, wherein a phase transition temperature of one of the organic semiconducting materials is not more than a glass transition point of one of the resins.  
     
     
         2 . The organic thin-film transistor of  claim 1 , wherein the organic thin-film transistor is manufactured by a process comprising the step in which heat treating is carried out at a heating temperature between the phase transition temperature and the glass transition point.  
     
     
         3 . The organic thin-film transistor of  claim 2 , wherein the heating temperature is in the range of from 100 to 250° C.  
     
     
         4 . The organic thin-film transistor of  claim 1 , further comprising an orientation layer provided in contact with the organic semiconductor layer.  
     
     
         5 . The organic thin-film transistor of  claim 1 , wherein the phase transition temperature is in the range of from 100 to 240° C.  
     
     
         6 . The organic thin-film transistor of  claim 1 , wherein the glass transition temperature is in the range of from 110 to 250° C.  
     
     
         7 . The organic thin-film transistor of  claim 1 , wherein the organic thin-film transistor is manufactured by a process comprising the step of coating a solution or dispersion solution of at least one of the organic semiconducting materials on the support to form the organic semiconductor layer.  
     
     
         8 . The organic thin-film transistor of  claim 1 , wherein one of the organic semiconducting materials is a π-conjugated polymer or oligomer.  
     
     
         9 . The organic thin-film transistor of  claim 8 , wherein the π-conjugated polymer is a homopolymer or copolymer of thiophene and the π-conjugated oligomer is a homo-oligomer or co-oligomer of thiophene.  
     
     
         10 . The organic thin-film transistor of  claim 9 , wherein the homopolymer or copolymer of thiophene is a homopolymer or copolymer containing a unit with two or more 3-alkylthiophene rings regioregularly connected in series, and the homo-oligomer or co-oligomer of thiophene is a homo-oligomer or co-oligomer containing a unit with two or more 3-alkylthiophene rings regioregularly connected in series.  
     
     
         11 . The organic thin-film transistor of  claim 10 , wherein the alkyl group of the 3-alkylthiophene rings is an alkyl group having a carbon atom number of from 4 to 15.  
     
     
         12 . A manufacturing process of an organic thin-film transistor comprising a support and provided thereon, a gate electrode, an insulation layer, a source electrode, a drain electrode, and an organic semiconductor layer, the support comprising at least one of resins, and the organic semiconductor layer containing at least one of organic semiconducting materials, wherein a phase transition temperature of one of the organic semiconducting materials is not more than a glass transition point of one of the resins, the process comprising the steps of: 
 providing a solution or dispersion solution of the organic semiconducting material; and    coating the solution or dispersion solution on the support or on the insulation layer to form the organic semiconductor layer.    
     
     
         13 . The manufacturing process of  claim 12 , comprising the step of heat treating the organic semiconductor layer at a heating temperature between the phase transition temperature and the glass transition point.  
     
     
         14 . The manufacturing process of  claim 13 , wherein the heating temperature is in the range of from 100 to 250° C.  
     
     
         15 . The manufacturing process of  claim 13 , wherein the phase transition temperature is in the range of from 100 to 240° C.  
     
     
         16 . The manufacturing process of  claim 13 , wherein the glass transition temperature is in the range of from 110 to 250° C.  
     
     
         17 . The manufacturing process of  claim 12 , wherein one of the organic semiconducting materials is a π-conjugated polymer or oligomer.  
     
     
         18 . The manufacturing process of  claim 17 , wherein the π-conjugated polymer is a homopolymer or copolymer of thiophene and the π-conjugated oligomer is a homo-oligomer or co-oligomer of thiophene.  
     
     
         19 . The manufacturing process of  claim 18 , wherein the homopolymer or copolymer of thiophene is a homopolymer or copolymer containing a unit with two or more 3-alkylthiophene rings regioregularly connected in series, and the homo-oligomer or co-oligomer of thiophene is a homo-oligomer or co-oligomer containing a unit with two or more 3-alkylthiophene rings regioregularly connected in series.  
     
     
         20 . The manufacturing process of  claim 19 , wherein the alkyl group of the 3-alkylthiophene rings is an alkyl group having a carbon atom number of from 4 to 15.