US2006055036A1PendingUtilityA1

Method of manufacturing semiconductor device, semiconductor device, and mounting structure of semiconductor device

Assignee: HASHIMOTO NOBUAKIPriority: Sep 15, 2004Filed: Aug 9, 2005Published: Mar 16, 2006
Est. expirySep 15, 2024(expired)· nominal 20-yr term from priority
H10W 90/734H10W 90/724H10W 74/15H10W 72/07251H10W 72/07236H10W 72/01331H10W 72/252H10W 72/241H10W 72/073H10W 72/072H10W 72/20H10W 46/501H10W 46/00H10W 72/071
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Claims

Abstract

A method of manufacturing a semiconductor device, including the following steps, forming a resin layer on a surface of a semiconductor chip, the surface is provided with a bump formed thereon, the resin layer having photosensitivity and adhesiveness, exposing an upper surface of the bump by removing a part of the resin layer right above the bump by exposing and then developing the resin layer, and bonding the semiconductor chip provided with a resin film formed of the resin layer face-down to a substrate, the bump of the semiconductor chip and a conductive section of the substrate being electrically connected by the resin film functioning as an adhesive.

Claims

exact text as granted — not AI-modified
1 . A method of manufacturing a semiconductor device, comprising: 
 forming a resin layer on a surface of a semiconductor chip, the surface is provided with a bump formed thereon, the resin layer having photosensitivity and adhesiveness;    exposing an upper surface of the bump by removing a part of the resin layer right above the bump by exposing and then developing the resin layer; and    bonding the semiconductor chip provided with a resin film formed of the resin layer face-down to a substrate, the bump of the semiconductor chip and a conductive section of the substrate being electrically connected by the resin film functioning as an adhesive.    
   
   
       2 . The method of manufacturing a semiconductor device according to  claim 1 , wherein a resin forming the resin layer is a photosensitive and thermoplastic resin or a precursor of the photosensitive and thermoplastic resin, and further comprising: 
 heating the resin layer to change the resin forming the resin layer into the resin film formed of a thermoplastic resin.    
   
   
       3 . The method of manufacturing a semiconductor device according to  claim 2 , wherein at least one of a photosensitive and thermoplastic resin forming the resin layer and a material of the photosensitive and thermoplastic resin including a precursor of the photosensitive and thermoplastic resin includes one of a thermoset resin and a component of the thermoset resin.  
   
   
       4 . The method of manufacturing a semiconductor device according to  claim 1 , wherein the resin layer is formed of a photosensitive and thermoset resin adhesive sheet.  
   
   
       5 . The method of manufacturing a semiconductor device according to  claim 1 , wherein a number of the semiconductor chips are integrally formed on a wafer, a part of the resin layer right above a dicing line of the wafer is removed simultaneously in the exposing step to expose the dicing line.  
   
   
       6 . The method of manufacturing a semiconductor device according to  claim 1 , wherein a mark is formed on the semiconductor chip, a part of the resin layer right above the mark on the semiconductor chip is removed simultaneously in the exposing step to expose the mark.  
   
   
       7 . The method of manufacturing a semiconductor device according to  claim 1 , wherein, in the bonding step, the bump is electrically connected to the conductive section via a brazing filler metal.  
   
   
       8 . A semiconductor device equipped with a semiconductor chip having a bump, comprising: 
 a resin film made of adhesive resin provided on a surface of the semiconductor chip provided with a bump formed thereon so as to expose an upper surface of the bump.    
   
   
       9 . The semiconductor device according to  claim 8 , wherein the adhesive resin is a thermoplastic resin.  
   
   
       10 . The semiconductor device according to  claim 9 , wherein the thermoplastic resin includes one of a thermoset resin and a part of a component of the thermoset resin.  
   
   
       11 . The semiconductor device according to  claim 8 , wherein a number of the semiconductor chips are integrally formed on a wafer, and the resin film is provided so as to expose a dicing line of the wafer.  
   
   
       12 . The semiconductor device according to  claim 8 , wherein a mark is formed on the semiconductor chip, and the resin film is provided so as to expose the mark.  
   
   
       13 . A mounting structure comprising: a substrate having a conductive section; and a semiconductor chip having a bump and bonded face-down on the substrate, wherein the conductive section of the substrate and the bump of the semiconductor chip are connected to each other one of directly without intervening the resin and indirectly via a conductive material.  
   
   
       14 . The mounting structure according to  claim 13  comprising a resin film formed between the semiconductor chip and the substrate except the connecting section between the conductive section of the substrate and the bump of the semiconductor chip.  
   
   
       15 . A mounting structure formed by the method of manufacturing a semiconductor device according to  claim 1.

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