Apparatus and a method for forming an alloy layer over a substrate
Abstract
Embodiments of the invention involve introducing at least two metals into a chamber to form an alloy layer over a substrate. In one embodiment, at least two metals are mixed and introduced into a chamber containing a substrate and in which a focused ion beam contacts the two metals to form at least one alloy layer over the substrate. In another embodiment, at least two precursor gas sources are introduced into the chamber in which each precursor gas source contains a metal. The focused ion beam contacts the two precursor gases to form an alloy layer over the substrate. In yet another embodiment, a second metal layer is formed over a first metal layer to form a multi-metal layer. Thereafter, thermal treatment or introducing a focused ion beam to at least a portion of the multi-metal layer is performed to create at least one alloy layer over the substrate.
Claims
exact text as granted — not AI-modified1 . A method comprising:
mixing at least two metal constituents provided in the powder form; placing the mixed metal constituents into a reservoir coupled to an outlet; positioning the outlet adjacent to a focused ion beam aperture; releasing a vapor including the mixed metal constituents through the outlet positioned adjacent to the focused ion beam aperture such that the focused ion beam contacts the vapor; and forming an alloy layer on a substrate that electrically interconnects two devices on the substrate.
2 . The method of claim 1 , wherein the alloy layer is a first alloy layer, the method further comprising:
forming a second alloy layer on the first alloy layer.
3 . The method of claim 2 , wherein the second alloy layer is created from a second multi-metal layer which is exposed to an alloy process.
4 . The method of claim 3 , wherein the alloy process includes thermal treatment.
5 . The method of claim 1 , wherein each of the at least two metal constituents is selected from the group consisting of cobalt, molybdenum, and tungsten.
6 . The method of claim 1 , wherein an electrical resistivity of the alloy layer formed on the substrate is about 10 μΩ×cm to about 120 μΩ×cm.
7 . The method of claim 1 , further comprising:
removing one of carbon, oxygen, and gallium from the alloy layer.
8 . The method of claim 1 , further comprising heating the alloy layer by applying one of a laser, local ion scan bombardment, and current forced through the alloy layer.
9 . The method of claim 8 , wherein applying heat comprises applying a coherent electromagnetic radiation source to the alloy layer.
10 . The method of claim 9 , wherein applying a coherent electromagnetic radiation source comprises outputting coherent electromagnetic radiation at a power in a range of between 0.3 watts and 5 watts for a time period in a range of between 500 milliseconds and 20 seconds.
11 . The method of claim 9 , further comprising focusing the coherent electromagnetic radiation source with a lens to a spot size on the alloy layer, wherein the spot size has an area in a range of between 0.5 micro-meters-squared and 800 micro-meters-squared.
12 . The method of claim 9 , wherein applying a coherent electromagnetic radiation source comprises a stage speed in a range of between 1 micron per second and 250 microns per second.
13 . The method of claim 1 , further comprising lowering a resistance of the alloy layer.
14 . The method of claim 13 , wherein lowering a resistance of the alloy layer comprises heating the alloy layer with one of a laser, local ion scan bombardment, and current forced through the at least one layer.Join the waitlist — get patent alerts
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